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Quasi-3-dimensional simulations and experimental validation of surface leakage currents in high operating temperature type-II superlattice infrared detectors

Journal of applied physics, 2022-11, Vol.132 (20), p.204501

2022

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Optical concentration in fully delineated mid-wave infrared T2SL detectors arrays

Applied physics letters, 2023-10, Vol.123 (18)

2023

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Simulation and Characterization of the Modulation Transfer Function in Fully Delineated Type-II Superlattices Infrared Detectors

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2459-2464

2024

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Utilizing the superior etch stop quality of HfO2 in the front end of line wafer scale integration of silicon nanowire biosensors

Microelectronic engineering, 2019-05, Vol.212, p.13-20

2019

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Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

Solid-state electronics, 2007-05, Vol.51 (5), p.771-777

2007

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Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator

Applied physics letters, 2005-06, Vol.86 (25)

2005

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Silicon nanowires integrated with CMOS circuits for biosensing application

Solid-state electronics, 2014-08, Vol.98, p.26-31

2014

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A robust spacer gate process for deca-nanometer high-frequency MOSFETs

Microelectronic engineering, 2006-03, Vol.83 (3), p.434-439

2006

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On the electron mobility enhancement in biaxially strained Si MOSFETs

Solid-state electronics, 2008-04, Vol.52 (4), p.498-505

2008

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Atomic-layer deposited thulium oxide as a passivation layer on germanium

Journal of applied physics, 2015-06, Vol.117 (21)

2015

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Threshold voltage control in TmSiO/HfO2 high-k/metal gate MOSFETs

Solid-state electronics, 2015-06, Vol.108, p.24-29

2015

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Hole effective mass in silicon inversion layers with different substrate orientations and channel directions

Journal of applied physics, 2011-09, Vol.110 (6), p.063711-063711-8

2011

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Sidewall transfer lithography for reliable fabrication of nanowires and deca-nanometer MOSFETs

Thin solid films, 2008-11, Vol.517 (1), p.117-120

2008

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Strained Si/SiGe MOS technology: Improving gate dielectric integrity

Microelectronic engineering, 2009-03, Vol.86 (3), p.218-223

2009

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SB-MOSFETs in UTB-SOI Featuring PtSi Source/Drain With Dopant Segregation

IEEE electron device letters, 2008-01, Vol.29 (1), p.125-127

2008

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Interface engineering of Ge using thulium oxide: Band line-up study

Microelectronic engineering, 2013-09, Vol.109, p.204-207

2013

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Low-frequency noise in Si0.7Ge0.3 surface channel pMOSFETs with ALD HfO2/Al2O3 gate dielectrics

Solid-state electronics, 2004-12, Vol.48 (12), p.2271-2275

2004

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Methods to reduce the loading effect in selective and non-selective epitaxial growth of sigec layers

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-06, Vol.109 (1-3), p.122-126

2004

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Reduced self-heating by strained silicon substrate engineering

Applied surface science, 2008-07, Vol.254 (19), p.6182-6185

2008

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On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors

Journal of applied physics, 2011-12, Vol.110 (12), p.124503-124503-6

2011

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Low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics

Solid-state electronics, 2005-06, Vol.49 (6), p.907-914

2005

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Ni-salicided CMOS with a poly-SiGe/Al2O3/HfO2/Al2O3 gate stack

Microelectronic engineering, 2005, Vol.77 (1), p.36-41

2005

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Effects of Carbon on Schottky Barrier Heights of NiSi Modified by Dopant Segregation

IEEE electron device letters, 2009-06, Vol.30 (6), p.608-610

2009

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Hole mobility in ultrathin body SOI pMOSFETs with SiGe or SiGeC channels

IEEE electron device letters, 2006-06, Vol.27 (6), p.466-468

2006

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Fully Depleted UTB and Trigate N-Channel MOSFETs Featuring Low-Temperature PtSi Schottky-Barrier Contacts With Dopant Segregation

IEEE electron device letters, 2009-05, Vol.30 (5), p.541-543

2009

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Quasi-3-dimensional simulations and experimental validation of surface leakage currents in high operating temperature type-II superlattice infrared detectors

Optical concentration in fully delineated mid-wave infrared T2SL detectors arrays

Simulation and Characterization of the Modulation Transfer Function in Fully Delineated Type-II Superlattices Infrared Detectors

Utilizing the superior etch stop quality of HfO2 in the front end of line wafer scale integration of silicon nanowire biosensors

Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator

Silicon nanowires integrated with CMOS circuits for biosensing application

A robust spacer gate process for deca-nanometer high-frequency MOSFETs

On the electron mobility enhancement in biaxially strained Si MOSFETs

Atomic-layer deposited thulium oxide as a passivation layer on germanium

Threshold voltage control in TmSiO/HfO2 high-k/metal gate MOSFETs

Hole effective mass in silicon inversion layers with different substrate orientations and channel directions

Sidewall transfer lithography for reliable fabrication of nanowires and deca-nanometer MOSFETs

Strained Si/SiGe MOS technology: Improving gate dielectric integrity

SB-MOSFETs in UTB-SOI Featuring PtSi Source/Drain With Dopant Segregation

Interface engineering of Ge using thulium oxide: Band line-up study

Low-frequency noise in Si0.7Ge0.3 surface channel pMOSFETs with ALD HfO2/Al2O3 gate dielectrics

Methods to reduce the loading effect in selective and non-selective epitaxial growth of sigec layers

Reduced self-heating by strained silicon substrate engineering

On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors

Low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics

Ni-salicided CMOS with a poly-SiGe/Al2O3/HfO2/Al2O3 gate stack

Effects of Carbon on Schottky Barrier Heights of NiSi Modified by Dopant Segregation

Hole mobility in ultrathin body SOI pMOSFETs with SiGe or SiGeC channels

Fully Depleted UTB and Trigate N-Channel MOSFETs Featuring Low-Temperature PtSi Schottky-Barrier Contacts With Dopant Segregation

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