UB Paderborn / Katalog / Suche / in CDI

Philosophical transactions of the Royal Society of London. Series A: Mathematical, physical, and engineering sciences, 2022-05, Vol.380 (2223), p.20200378

2022

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Transient Thermal Characterization of AlGaN/GaN HEMTs Under Pulsed Biasing

IEEE transactions on electron devices, 2018-05, Vol.65 (5), p.1753-1758

2018

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IEEE_Xplore

Methane against Methanol: The Tortoise and the Hare of the Oxidation Race

The journal of physical chemistry letters, 2023-10, Vol.14 (39), p.8749-8754

2023

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First-Principles Assessment of the Structure and Stability of 15 Intrinsic Point Defects in Zinc-Blende Indium Arsenide

Crystals (Basel), 2019-01, Vol.9 (1), p.48

2019

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Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features

IEEE transactions on electron devices, 2013-06, Vol.60 (6), p.1898-1904

2013

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IEEE_Xplore

High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge

Applied physics letters, 2017-04, Vol.110 (14)

2017

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Exploring the effects of quantum decoherence on the excited-state dynamics of molecular systems

Theoretical chemistry accounts, 2021-04, Vol.140 (4), Article 42

2021

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Lateral β-Ga2O3 field effect transistors

Semiconductor science and technology, 2020, Vol.35 (1)

2020

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The Impact of Bias Conditions on Self-Heating in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.159-162

2013

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IEEE_Xplore

Thermally-Aware Layout Design of β-Ga₂O₃ Lateral MOSFETs

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1251-1257

2022

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IEEE_Xplore

Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2589-2597

2007

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IEEE_Xplore

500 °C operation of β-Ga2O3 field-effect transistors

Applied physics letters, 2022-12, Vol.121 (24)

2022

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Heavy‐Atom Quantum Tunnelling in Spin Crossovers of Nitrenes

Angewandte Chemie, 2022-08, Vol.134 (33), p.n/a

2022

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Self-Heating Characterization of \beta -Ga2O3 Thin-Channel MOSFETs by Pulsed - and Raman Nanothermography

IEEE transactions on electron devices, 2020-01, Vol.67 (1), p.204-211

2020

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IEEE_Xplore

Electroluminescence Microscopy of Cross-Sectioned AlGaN/GaN High-Electron Mobility Transistors

IEEE transactions on electron devices, 2016-04, Vol.63 (4), p.1459-1463

2016

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IEEE_Xplore

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Instanton formulation of Fermi’s golden rule in the Marcus inverted regime

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Heavy-atom tunnelling in singlet oxygen deactivation predicted by instanton theory with branch-point singularities

Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry

Spin Crossover of Thiophosgene via Multidimensional Heavy-Atom Quantum Tunneling

Vascular effects of a low-carbohydrate high-protein diet

Heavy‐Atom Quantum Tunnelling in Spin Crossovers of Nitrenes

A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices

Competing quantum effects in heavy-atom tunnelling through conical intersections

Semiclassical instanton formulation of Marcus–Levich–Jortner theory

Instanton theory for Fermi's golden rule and beyond

Transient Thermal Characterization of AlGaN/GaN HEMTs Under Pulsed Biasing

Methane against Methanol: The Tortoise and the Hare of the Oxidation Race

First-Principles Assessment of the Structure and Stability of 15 Intrinsic Point Defects in Zinc-Blende Indium Arsenide

Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features

High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge

Exploring the effects of quantum decoherence on the excited-state dynamics of molecular systems

Lateral β-Ga2O3 field effect transistors

The Impact of Bias Conditions on Self-Heating in AlGaN/GaN HEMTs

Thermally-Aware Layout Design of β-Ga₂O₃ Lateral MOSFETs

Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices

500 °C operation of β-Ga2O3 field-effect transistors

Heavy‐Atom Quantum Tunnelling in Spin Crossovers of Nitrenes

Self-Heating Characterization of \beta -Ga2O3 Thin-Channel MOSFETs by Pulsed - and Raman Nanothermography

Electroluminescence Microscopy of Cross-Sectioned AlGaN/GaN High-Electron Mobility Transistors

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