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Advanced tools for smartphone-based experiments: phyphox

Physics education, 2018-07, Vol.53 (4), p.45009

2018

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Microstructure of heteroepitaxial GaN revealed by x-ray diffraction

Journal of applied physics, 2003-06, Vol.93 (11), p.8918-8925

2003

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X-ray diffraction analysis of the defect structure in epitaxial GaN

Applied physics letters, 2000-10, Vol.77 (14), p.2145-2147

2000

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Collaborative smartphone experiments for large audiences with phyphox

European journal of physics, 2022-09, Vol.43 (5), p.55702

2022

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The role of high-temperature island coalescence in the development of stresses in GaN films

Applied physics letters, 2001-04, Vol.78 (14), p.1976-1978

2001

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Strain relaxation in AlGaN under tensile plane stress

Journal of applied physics, 2000-12, Vol.88 (12), p.7029-7036

2000

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Quantum dot formation by segregation enhanced CdSe reorganization

Journal of applied physics, 2002-12, Vol.92 (11), p.6546-6552

2002

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Strain relaxation in AlGaN/GaN superlattices grown on GaN

Journal of applied physics, 2001-02, Vol.89 (4), p.2160-2167

2001

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Incorporation of indium during molecular beam epitaxy of InGaN

Applied physics letters, 1998-11, Vol.73 (22), p.3232-3234

1998

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Measuring the magnetic field of a low frequency LC-circuit with phyphox

Physics education, 2022-11, Vol.57 (6), p.65024

2022

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CdSe/ZnSe quantum structures grown by migration enhanced epitaxy: Structural and optical investigations

Applied physics letters, 1997-09, Vol.71 (11), p.1510-1512

1997

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Strain in cracked AlGaN layers

Journal of applied physics, 2002-07, Vol.92 (1), p.118-123

2002

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500-560 nm Laser Emission from Quaternary CdZnSSe Quantum Wells

Physica status solidi. B. Basic research, 2002-01, Vol.229 (2), p.935-942

2002

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Mosaicity of GaN Epitaxial Layers: Simulation and Experiment

Physica status solidi. B. Basic research, 2001-11, Vol.228 (2), p.403-406

2001

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Growth of MgTe and Cd1-xMgxTe thin films by molecular beam epitaxy

Journal of crystal growth, 1993-08, Vol.131 (3-4), p.607-611

1993

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Electro-Optical Characterization of CdSe Quantum Dot Laser Diodes

Physica status solidi. B. Basic research, 2002-01, Vol.229 (2), p.1029-1032

2002

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Relaxation and mosaicity profiles in epitaxial layers studied by high resolution X-ray diffraction

Journal of crystal growth, 1994, Vol.135 (1), p.41-52

1994

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Thermal expansion of bulk and homoepitaxial GaN

Applied physics letters, 2000-09, Vol.77 (10), p.1434-1436

2000

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Nondestructive evaluation of misfit dislocation densities in ZnSe∕GaAs heterostructures by x-ray diffuse scattering

Journal of applied physics, 2005-05, Vol.97 (10)

2005

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X-ray scattering from GaN epitaxial layers - an example of highly anisotropic coherence

Journal of physics. D, Applied physics, 2001-05, Vol.34 (10A), p.A25-A29

2001

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Advanced Tools for Smartphone-Based Experiments: Phyphox

Physics education, 2018-07, Vol.53 (4)

2018

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Nondestructive detection of stacking faults for optimization of CdSe/ZnSe quantum-dot structures

Applied physics letters, 2000-11, Vol.77 (22), p.3544-3546

2000

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High Reflectivity p-Type Doped Distributed Bragg Reflectors Using ZnSe/MgS Superlattices

Physica status solidi. B. Basic research, 2002-01, Vol.229 (1), p.111-115

2002

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Analysis of the Defect Structure of Epitaxial GaN

Physica status solidi. A, Applied research, 1999-11, Vol.176 (1), p.391-395

1999

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Influence of the cap layer growth temperature on the Cd distribution in CdSe/ZnSe heterostructures

Journal of crystal growth, 2004-03, Vol.263 (1-4), p.348-352

2004

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Advanced tools for smartphone-based experiments: phyphox

Microstructure of heteroepitaxial GaN revealed by x-ray diffraction

X-ray diffraction analysis of the defect structure in epitaxial GaN

Collaborative smartphone experiments for large audiences with phyphox

The role of high-temperature island coalescence in the development of stresses in GaN films

Strain relaxation in AlGaN under tensile plane stress

Quantum dot formation by segregation enhanced CdSe reorganization

Strain relaxation in AlGaN/GaN superlattices grown on GaN

Incorporation of indium during molecular beam epitaxy of InGaN

Measuring the magnetic field of a low frequency LC-circuit with phyphox

CdSe/ZnSe quantum structures grown by migration enhanced epitaxy: Structural and optical investigations

Strain in cracked AlGaN layers

500-560 nm Laser Emission from Quaternary CdZnSSe Quantum Wells

Mosaicity of GaN Epitaxial Layers: Simulation and Experiment

Growth of MgTe and Cd1-xMgxTe thin films by molecular beam epitaxy

Electro-Optical Characterization of CdSe Quantum Dot Laser Diodes

Relaxation and mosaicity profiles in epitaxial layers studied by high resolution X-ray diffraction

Thermal expansion of bulk and homoepitaxial GaN

Nondestructive evaluation of misfit dislocation densities in ZnSe∕GaAs heterostructures by x-ray diffuse scattering

X-ray scattering from GaN epitaxial layers - an example of highly anisotropic coherence

Advanced Tools for Smartphone-Based Experiments: Phyphox

Nondestructive detection of stacking faults for optimization of CdSe/ZnSe quantum-dot structures

High Reflectivity p-Type Doped Distributed Bragg Reflectors Using ZnSe/MgS Superlattices

Analysis of the Defect Structure of Epitaxial GaN

Influence of the cap layer growth temperature on the Cd distribution in CdSe/ZnSe heterostructures

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