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Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers

Journal of applied physics, 1998-11, Vol.84 (10), p.5828-5830

1998

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Photoluminescence of GaN : Mg grown by metalorganic vapor-phase epitaxy (MOVPE)

Journal of crystal growth, 1999-08, Vol.205 (1), p.1-10

1999

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Compensation effects in Mg-doped GaN epilayers

Journal of crystal growth, 1998-06, Vol.189-190, p.523-527

1998

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Effects of electron–phonon interaction and chemical shift on near-band-edge recombination in GaN

Journal of applied physics, 2002-06, Vol.91 (12), p.9827-9834

2002

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Concentric ring contacts used for the determination of contact resistances

Solid-state electronics, 2000-03, Vol.44 (3), p.451-455

2000

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MOVPE of AlGaAsSb using TTBAl as an alternative aluminum precursor

Journal of crystal growth, 2000-12, Vol.221 (1), p.450-455

2000

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First realized polarization converter based on hybrid supermodes

IEEE photonics technology letters, 1998-03, Vol.10 (3), p.388-390

1998

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Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emission wavelength in the spectral range of 450–470 nm

Applied physics letters, 2001-09, Vol.79 (13), p.1953-1955

2001

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LP-MOVPE growth and optical characterization of GaInP/GaAs heterostructures: interfaces, quantum wells and quantum wires

Journal of crystal growth, 1992-11, Vol.124 (1), p.199-206

1992

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Low-pressure metal organic vapour-phase epitaxy and characterization of strained InAs(P)/InAsSb superlattices for infrared emitters

Journal of crystal growth, 1998-12, Vol.195 (1), p.373-377

1998

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The 1/f noise of InP based 2DEG devices and its dependence on mobility

IEEE transactions on electron devices, 1999-01, Vol.46 (1), p.194-203

1999

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InAs(PSb)-based “W” quantum well laser diodes emitting near 3.3 μm

Applied physics letters, 2000-05, Vol.76 (18), p.2499-2501

2000

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A Study of Sulphur Diffusion in ZnMgSSe/ZnSe Quantum Wells by Energy-Loss Imaging in a Transmission Electron Microscope

Physica status solidi. A, Applied research, 2000-07, Vol.180 (1), p.351-356

2000

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Hot-electron energy relaxation, noise, and lattice strain in InGaAs quantum well channels

Applied physics letters, 1999-03, Vol.74 (13), p.1895-1897

1999

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Al-free InP-based high electron mobility transistors: Design, fabrication and performance

Solid-state electronics, 1997-08, Vol.41 (8), p.1159-1170

1997

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Structural properties of MOVPE-grown ZnSe studied by X-ray diffractometry, atomic force microscopy and electron microscopy

Journal of crystal growth, 1999-02, Vol.197 (3), p.507-512

1999

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The influence of Mg-concentration and carrier gas on the electrical and optical properties of GaN : Mg grown by MOVPE

Journal of crystal growth, 1998-12, Vol.195 (1), p.274-279

1998

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Doping of InAs, GaSb and InPSb by low pressure MOVPE

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.783-787

1997

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Investigation of process technologies for the fabrication of AlGaInP mesa ultra high brightness light emitting diode

Materials science & engineering. B, Solid-state materials for advanced technology, 1998-02, Vol.51 (1), p.34-38

1998

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Characterization of MOVPE grown InPSb/InAs heterostructures

Applied surface science, 1998-01, Vol.123-124, p.746-750

1998

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Conformal MOVPE of (Al)GaAs on silicon using alternative chlorine-containing precursors

Journal of crystal growth, 2000-12, Vol.221 (1), p.225-230

2000

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A Comparative Study of the Near Band Edge Luminescence of Epitaxial ZnSe:N Grown by MBE and MOVPE

Physica status solidi. B. Basic research, 2002-01, Vol.229 (1), p.333-337

2002

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The role of impurity bands and electron–phonon interaction in formation of near-band-edge PL spectra of compensated ZnSe

Journal of crystal growth, 2000-06, Vol.214, p.567-571

2000

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MOVPE of AlAsSb using tritertiarybutylaluminum

Journal of crystal growth, 1998-12, Vol.195 (1), p.85-90

1998

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InP-to-InGaAs interfacial strain grown by using tertiarybutylarsine and tertiarybutylphosphine

Science China. Mathematics, 2002-05, Vol.45 (5), p.655-660

2002

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Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers

Photoluminescence of GaN : Mg grown by metalorganic vapor-phase epitaxy (MOVPE)

Compensation effects in Mg-doped GaN epilayers

Effects of electron–phonon interaction and chemical shift on near-band-edge recombination in GaN

Concentric ring contacts used for the determination of contact resistances

MOVPE of AlGaAsSb using TTBAl as an alternative aluminum precursor

First realized polarization converter based on hybrid supermodes

Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emission wavelength in the spectral range of 450–470 nm

LP-MOVPE growth and optical characterization of GaInP/GaAs heterostructures: interfaces, quantum wells and quantum wires

Low-pressure metal organic vapour-phase epitaxy and characterization of strained InAs(P)/InAsSb superlattices for infrared emitters

The 1/f noise of InP based 2DEG devices and its dependence on mobility

InAs(PSb)-based “W” quantum well laser diodes emitting near 3.3 μm

A Study of Sulphur Diffusion in ZnMgSSe/ZnSe Quantum Wells by Energy-Loss Imaging in a Transmission Electron Microscope

Hot-electron energy relaxation, noise, and lattice strain in InGaAs quantum well channels

Al-free InP-based high electron mobility transistors: Design, fabrication and performance

Structural properties of MOVPE-grown ZnSe studied by X-ray diffractometry, atomic force microscopy and electron microscopy

The influence of Mg-concentration and carrier gas on the electrical and optical properties of GaN : Mg grown by MOVPE

Doping of InAs, GaSb and InPSb by low pressure MOVPE

Investigation of process technologies for the fabrication of AlGaInP mesa ultra high brightness light emitting diode

Characterization of MOVPE grown InPSb/InAs heterostructures

Conformal MOVPE of (Al)GaAs on silicon using alternative chlorine-containing precursors

A Comparative Study of the Near Band Edge Luminescence of Epitaxial ZnSe:N Grown by MBE and MOVPE

The role of impurity bands and electron–phonon interaction in formation of near-band-edge PL spectra of compensated ZnSe

MOVPE of AlAsSb using tritertiarybutylaluminum

InP-to-InGaAs interfacial strain grown by using tertiarybutylarsine and tertiarybutylphosphine

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