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A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz

IEEE electron device letters, 2008-08, Vol.29 (8), p.824-826

2008

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High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates

IEEE electron device letters, 2004-04, Vol.25 (4), p.161-163

2004

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AlGaN/GaN high electron mobility transistors with InGaN back-barriers

IEEE electron device letters, 2006-01, Vol.27 (1), p.13-15

2006

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AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy

Journal of applied physics, 2001-11, Vol.90 (10), p.5196-5201

2001

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AlGaN/AlN/GaN high-power microwave HEMT

IEEE electron device letters, 2001-10, Vol.22 (10), p.457-459

2001

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Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs

IEEE electron device letters, 2004-05, Vol.25 (5), p.229-231

2004

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Effect of ohmic contacts on buffer leakage of GaN transistors

IEEE electron device letters, 2006-07, Vol.27 (7), p.529-531

2006

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Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs

IEEE transactions on electron devices, 2006-03, Vol.53 (3), p.562-565

2006

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High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation

IEEE electron device letters, 2004-01, Vol.25 (1), p.7-9

2004

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A high-efficiency class-E GaN HEMT power amplifier at 1.9 GHz

IEEE microwave and wireless components letters, 2006-01, Vol.16 (1), p.22-24

2006

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Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures

Journal of applied physics, 1999-11, Vol.86 (10), p.5850-5857

1999

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Rutile films grown by molecular beam epitaxy on GaN and AlGaN∕GaN

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2005-03, Vol.23 (2), p.499-506

2005

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Growth and characteristics of Fe-doped GaN

Journal of crystal growth, 2003-02, Vol.248, p.513-517

2003

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High breakdown GaN HEMT with overlapping gate structure

IEEE electron device letters, 2000-09, Vol.21 (9), p.421-423

2000

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p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs)

IEEE electron device letters, 2002-10, Vol.23 (10), p.588-590

2002

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Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition

Applied physics letters, 2001-11, Vol.79 (21), p.3449-3451

2001

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Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers

Applied physics letters, 2000-12, Vol.77 (24), p.3998-4000

2000

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Power and linearity characteristics of GaN MISFETs on sapphire substrate

IEEE electron device letters, 2004-02, Vol.25 (2), p.55-57

2004

Volltextzugriff (PDF)

Gallium nitride based transistors

Journal of physics. Condensed matter, 2001-08, Vol.13 (32), p.7139-7157

2001

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High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology

IEEE transactions on microwave theory and techniques, 2003-02, Vol.51 (2), p.643-652

2003

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Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs

IEEE electron device letters, 2002-02, Vol.23 (2), p.76-78

2002

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2.1 A∕mm current density AlGaN∕GaN HEMT

Electronics letters, 2003-04, Vol.39 (7), p.625

2003

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A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier

IEEE transactions on microwave theory and techniques, 2000-12, Vol.48 (12), p.2573-2578

2000

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Influence of epitaxial structure in the noise figure of AlGaN/GaN HEMTs

IEEE transactions on microwave theory and techniques, 2005-02, Vol.53 (2), p.762-769

2005

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GaN–GaN junctions with ultrathin AlN interlayers: Expanding heterojunction design

Applied physics letters, 2002-06, Vol.80 (23), p.4387-4389

2002

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A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz

High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates

AlGaN/GaN high electron mobility transistors with InGaN back-barriers

AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy

AlGaN/AlN/GaN high-power microwave HEMT

Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs

Effect of ohmic contacts on buffer leakage of GaN transistors

Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs

High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation

A high-efficiency class-E GaN HEMT power amplifier at 1.9 GHz

Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures

Rutile films grown by molecular beam epitaxy on GaN and AlGaN∕GaN

Growth and characteristics of Fe-doped GaN

High breakdown GaN HEMT with overlapping gate structure

p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs)

Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition

Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers

Power and linearity characteristics of GaN MISFETs on sapphire substrate

Gallium nitride based transistors

High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology

Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs

2.1 A∕mm current density AlGaN∕GaN HEMT

A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier

Influence of epitaxial structure in the noise figure of AlGaN/GaN HEMTs

GaN–GaN junctions with ultrathin AlN interlayers: Expanding heterojunction design

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