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Narrow-Ridge Red-Wavelength InP Quantum Dot Lasers Grown Heteroepitaxially Within Patterned Si-Based PIC

2024 Conference on Lasers and Electro-Optics (CLEO), 2024, p.1-2

2024

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Low-loss Germanium-on-Silicon Waveguides and Ring Resonators for the Mid-Wave Infrared

2022 Conference on Lasers and Electro-Optics (CLEO), 2022, p.1-2

2022

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Auswirkungen einer SARS-CoV-2-Infektion auf Symptomatik und Therapie chronisch-entzündlicher Darmerkrankungen

Zeitschrift für Gastroenterologie, 2021-11, Vol.59 (11), p.1189-1196

2021

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Efficient Optical Coupling between III-V Semiconductor and SiNx Waveguides via Heteroepitaxial Integration

2021 IEEE Photonics Conference (IPC), 2021, p.1-2

2021

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InGaAsP/InP Membrane Gain Sections for III-V/SiNx Heterogeneous Photonic Integration

2021 Conference on Lasers and Electro-Optics (CLEO), 2021, p.1-2

2021

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High-Power (>300 mW) On-Chip Laser With Passively Aligned Silicon-Nitride Waveguide DBR Cavity

IEEE photonics journal, 2020-12, Vol.12 (6), p.1-12

2020

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Liquid phase epitaxy SiGe films on a CVD-grown SiGe/Si (0 0 1) graded film

Journal of crystal growth, 2020-04, Vol.535, p.125541, Article 125541

2020

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High Power (> 300 mW) 1550 nm On-Chip Laser Realized using Passively Aligned Hybrid Integration

2020 Conference on Lasers and Electro-Optics (CLEO), 2020, p.1-2

2020

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Sub-10-nm-Diameter InGaAs Vertical Nanowire MOSFETs: Ni Versus Mo Contacts

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3762-3768

2018

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Nanoscale III-V Light Emitting Diode with Antenna-Enhanced 250 Picosecond Spontaneous Emission Lifetime

2018 IEEE International Semiconductor Laser Conference (ISLC), 2018, p.1-2

2018

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GaAsP/InGaP HBTs grown epitaxially on Si substrates: Effect of dislocation density on DC current gain

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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The Responsibility Process: Wie Sie Sich Selbst und Andere Wirkungsvoll Führen und Coachen

1, 2018

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Using quality of service lanes to control the impact of raid traffic within a burst buffer

Proceedings of the 2017 Winter Simulation Conference, 2017, p.1-12

2017

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Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers

Journal of crystal growth, 2017-11, Vol.478, p.64-70

2017

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Controlling surface recombination in a nanoscale III-V light emitting diode

2017 IEEE Photonics Conference (IPC), 2017, p.33-34

2017

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Large spontaneous emission rate enhancement in a nanoscale III-V LED coupled to an optical antenna

2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop (E3S), 2017, p.1-3

2017

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Source/Drain Asymmetry in InGaAs Vertical Nanowire MOSFETs

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2161-2165

2017

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Remote epitaxy through graphene enables two-dimensional material-based layer transfer

Nature (London), 2017-04, Vol.544 (7650), p.340-343

2017

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GaAsP/InGaP heterojunction bipolar transistors grown by MOCVD

Journal of applied physics, 2017-01, Vol.121 (4)

2017

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Using quality of service lanes to control the impact of raid traffic within a burst buffer

2017 Winter Simulation Conference (WSC), 2017, p.932-943

2017

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GaAsP/InGaP Heterojunction Bipolar Transistors for III-V on Si Microelectronics

Heidelberger, Christopher

2017

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Optical antenna enhanced spontaneous emission rate in electrically injected nanoscale III-V LED

2016 International Semiconductor Laser Conference (ISLC), 2016, p.1-2

2016

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Heteroepitaxial growth of In{sub 0.30}Ga{sub 0.70}As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

AIP advances, 2016-08, Vol.6 (8)

2016

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Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

AIP advances, 2016-08, Vol.6 (8), p.085106-085106-6

2016

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Narrow-Ridge Red-Wavelength InP Quantum Dot Lasers Grown Heteroepitaxially Within Patterned Si-Based PIC

Low-loss Germanium-on-Silicon Waveguides and Ring Resonators for the Mid-Wave Infrared

Auswirkungen einer SARS-CoV-2-Infektion auf Symptomatik und Therapie chronisch-entzündlicher Darmerkrankungen

Efficient Optical Coupling between III-V Semiconductor and SiNx Waveguides via Heteroepitaxial Integration

InGaAsP/InP Membrane Gain Sections for III-V/SiNx Heterogeneous Photonic Integration

High-Power (>300 mW) On-Chip Laser With Passively Aligned Silicon-Nitride Waveguide DBR Cavity

Liquid phase epitaxy SiGe films on a CVD-grown SiGe/Si (0 0 1) graded film

High Power (> 300 mW) 1550 nm On-Chip Laser Realized using Passively Aligned Hybrid Integration

Sub-10-nm-Diameter InGaAs Vertical Nanowire MOSFETs: Ni Versus Mo Contacts

Nanoscale III-V Light Emitting Diode with Antenna-Enhanced 250 Picosecond Spontaneous Emission Lifetime

GaAsP/InGaP HBTs grown epitaxially on Si substrates: Effect of dislocation density on DC current gain

Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique

The Responsibility Process: Wie Sie Sich Selbst und Andere Wirkungsvoll Führen und Coachen

Using quality of service lanes to control the impact of raid traffic within a burst buffer

Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers

Controlling surface recombination in a nanoscale III-V light emitting diode

Large spontaneous emission rate enhancement in a nanoscale III-V LED coupled to an optical antenna

Source/Drain Asymmetry in InGaAs Vertical Nanowire MOSFETs

Remote epitaxy through graphene enables two-dimensional material-based layer transfer

GaAsP/InGaP heterojunction bipolar transistors grown by MOCVD

Using quality of service lanes to control the impact of raid traffic within a burst buffer

GaAsP/InGaP Heterojunction Bipolar Transistors for III-V on Si Microelectronics

Optical antenna enhanced spontaneous emission rate in electrically injected nanoscale III-V LED

Heteroepitaxial growth of In{sub 0.30}Ga{sub 0.70}As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

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