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A 9-kV Normally-on Vertical-Channel SiC JFET for Unipolar Operation

IEEE electron device letters, 2010-05, Vol.31 (5), p.470-472

2010

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Degradation and Full Recovery in High-Voltage Implanted-Gate SiC JFETs Subjected to Bipolar Current Stress

IEEE electron device letters, 2012-07, Vol.33 (7), p.952-954

2012

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Investigation of the Suitability of 1200-V Normally-Off Recessed-Implanted-Gate SiC VJFETs for Efficient Power-Switching Applications

IEEE electron device letters, 2009-07, Vol.30 (7), p.736-738

2009

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600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration

Materials science forum, 2010-01, Vol.645-648, p.1147-1150

2010

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Process Tolerant Single Photolithography/Implantation 120-Zone Junction Termination Extension

Materials science forum, 2013-01, Vol.740-742, p.855-858, Article 855

2013

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Comparisons of Design and Yield for Large-Area 10-kV 4H-SiC DMOSFETs

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1816-1823

2008

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Feasibility of Efficient Power Switching Using Short-Channel 1200-V Normally-Off SiC VJFETs; Experimental Analysis and Simulations

Materials science forum, 2010-01, Vol.645-648, p.929-932

2010

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Androgenic adult granulosa cell tumor in a 13-year-old prepubertal patient : A case report and review of the literature

International journal of gynecological pathology, 2000-07, Vol.19 (3), p.266-271

2000

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Androgenic Adult Granulosa Cell Tumor in a 13-Year-Old Prepubertal Patient: A Case Report and Review of the Literature

International journal of gynecological pathology, 2000-07, Vol.19 (3), p.266-271

2000

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Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices

Materials science forum, 2012, Vol.717-720, p.977-980, Article 977

2012

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11.72- \hbox^ Active-Area Wafer-Interconnected p-i-n Diode Pulsed at 64 kA Dissipates 382 J and Exhibits an Action of 1.7 \hbox^\cdot\hbox

IEEE electron device letters, 2012-06, Vol.33 (6), p.764-766

2012

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600-V Symmetrical Bi-Directional Power Switching Using SiC Vertical-Channel JFETs with Reliable Edge Termination

Materials science forum, 2011, Vol.679-680, p.591-594

2011

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High-Yield 4H-SiC Thyristors for Wafer-Scale Interconnection

Materials science forum, 2012, Vol.717-720, p.1171-1174

2012

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11.72-[Formula Omitted] Active-Area Wafer-Interconnected p-i-n Diode Pulsed at 64 kA Dissipates 382 J and Exhibits an Action of 1.7 [Formula Omitted]

IEEE electron device letters, 2012-06, Vol.33 (6), p.764-766

2012

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11.72-cm2 Active-Area Wafer-Interconnected p-i-n Diode Pulsed at 64 kA Dissipates 382 J and Exhibits an Action of 1.7 MA2·s

IEEE electron device letters, 2012, Vol.33 (6), p.764-766

2012

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Design and Yield of 9 kV Unipolar Normally-ON Vertical-Channel SiC JFETs

Materials science forum, 2011, Vol.679-680, p.617-620

2011

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A 2055-V (at 0.7 \hbox^) 24-A (at 706 \hbox^) Normally On 4H-SiC JFET With 6.8- \hbox^ Active Area and Blocking-Voltage Capability Reaching the Material Limit

IEEE electron device letters, 2008-12, Vol.29 (12), p.1325-1327

2008

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A 2055-V (at 0.7 [Formula Omitted]) 24-A (at 706 [Formula Omitted]) Normally On 4H-SiC JFET With 6.8- [Formula Omitted] Active Area and Blocking-Voltage Capability Reaching the Material Limit

IEEE electron device letters, 2008-12, Vol.29 (12), p.1325

2008

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A 1680-V (at 1 [Formula Omitted]) 54-A (at 780 [Formula Omitted]) Normally ON 4H-SiC JFET With 0.143- [Formula Omitted] Active Area

IEEE electron device letters, 2008-10, Vol.29 (10), p.1132

2008

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A 1680-V (at 1 \hbox^) 54-A (at 780 \hbox^) Normally ON 4H-SiC JFET With 0.143- \hbox^ Active Area

IEEE electron device letters, 2008-10, Vol.29 (10), p.1132-1134

2008

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Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors

Materials science forum, 2012, Vol.717-720, p.1013-1016

2012

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A 1680-V (at 1 mA/cm2) 54-A (at 780 W/cm2) Normally ON 4H-SiC JFET With 0.143-cm2 Active Area

IEEE electron device letters, 2008, Vol.29 (10), p.1132-1134

2008

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A 2055-V (at 0.7 mA/cm2) 24-A (at 706 W/cm2) Normally On 4H-SiC JFET With 6.8-mm2 Active Area and Blocking-Voltage Capability Reaching the Material Limit

IEEE electron device letters, 2008, Vol.29 (12), p.1325-1327

2008

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A 1680-V (at 1 hbox mA / cm 2 ) 54-A (at 780 hbox W / cm 2 ) Normally ON 4H-SiC JFET With 0.143- hbox cm 2 Active Area

IEEE electron device letters, 2008-01, Vol.29 (10)

2008

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A 2055-V (at 0.7 hbox mA / cm 2 ) 24-A (at 706 hbox W / cm 2 ) Normally On 4H-SiC JFET With 6.8- hbox mm 2 Active Area and Blocking-Voltage Capability Reaching the Material Limit

IEEE electron device letters, 2008-01, Vol.29 (12)

2008

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A 9-kV Normally-on Vertical-Channel SiC JFET for Unipolar Operation

Degradation and Full Recovery in High-Voltage Implanted-Gate SiC JFETs Subjected to Bipolar Current Stress

Investigation of the Suitability of 1200-V Normally-Off Recessed-Implanted-Gate SiC VJFETs for Efficient Power-Switching Applications

600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration

Process Tolerant Single Photolithography/Implantation 120-Zone Junction Termination Extension

Comparisons of Design and Yield for Large-Area 10-kV 4H-SiC DMOSFETs

Feasibility of Efficient Power Switching Using Short-Channel 1200-V Normally-Off SiC VJFETs; Experimental Analysis and Simulations

Androgenic adult granulosa cell tumor in a 13-year-old prepubertal patient : A case report and review of the literature

Androgenic Adult Granulosa Cell Tumor in a 13-Year-Old Prepubertal Patient: A Case Report and Review of the Literature

Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices

11.72- \hbox^ Active-Area Wafer-Interconnected p-i-n Diode Pulsed at 64 kA Dissipates 382 J and Exhibits an Action of 1.7 \hbox^\cdot\hbox

600-V Symmetrical Bi-Directional Power Switching Using SiC Vertical-Channel JFETs with Reliable Edge Termination

High-Yield 4H-SiC Thyristors for Wafer-Scale Interconnection

11.72-[Formula Omitted] Active-Area Wafer-Interconnected p-i-n Diode Pulsed at 64 kA Dissipates 382 J and Exhibits an Action of 1.7 [Formula Omitted]

11.72-cm2 Active-Area Wafer-Interconnected p-i-n Diode Pulsed at 64 kA Dissipates 382 J and Exhibits an Action of 1.7 MA2·s

Design and Yield of 9 kV Unipolar Normally-ON Vertical-Channel SiC JFETs

A 2055-V (at 0.7 \hbox^) 24-A (at 706 \hbox^) Normally On 4H-SiC JFET With 6.8- \hbox^ Active Area and Blocking-Voltage Capability Reaching the Material Limit

A 2055-V (at 0.7 [Formula Omitted]) 24-A (at 706 [Formula Omitted]) Normally On 4H-SiC JFET With 6.8- [Formula Omitted] Active Area and Blocking-Voltage Capability Reaching the Material Limit

A 1680-V (at 1 [Formula Omitted]) 54-A (at 780 [Formula Omitted]) Normally ON 4H-SiC JFET With 0.143- [Formula Omitted] Active Area

A 1680-V (at 1 \hbox^) 54-A (at 780 \hbox^) Normally ON 4H-SiC JFET With 0.143- \hbox^ Active Area

Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors

A 1680-V (at 1 mA/cm2) 54-A (at 780 W/cm2) Normally ON 4H-SiC JFET With 0.143-cm2 Active Area

A 2055-V (at 0.7 mA/cm2) 24-A (at 706 W/cm2) Normally On 4H-SiC JFET With 6.8-mm2 Active Area and Blocking-Voltage Capability Reaching the Material Limit

A 1680-V (at 1 hbox mA / cm 2 ) 54-A (at 780 hbox W / cm 2 ) Normally ON 4H-SiC JFET With 0.143- hbox cm 2 Active Area

A 2055-V (at 0.7 hbox mA / cm 2 ) 24-A (at 706 hbox W / cm 2 ) Normally On 4H-SiC JFET With 6.8- hbox mm 2 Active Area and Blocking-Voltage Capability Reaching the Material Limit

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