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Low-resistance ohmic contacts on boron-doped {113} oriented homoepitaxial diamond layers

Diamond and related materials, 2022-01, Vol.121, p.108797, Article 108797

2022

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Experimental demonstration of a microwave photonic link using an optically phased antenna array for a millimeter wave band

Applied optics (2004), 2021-02, Vol.60 (4), p.1013

2021

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Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers

Diamond and related materials, 2022-06, Vol.126, p.109088, Article 109088

2022

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Effect of substrate crystalline orientation on boron-doped homoepitaxial diamond growth

Diamond and related materials, 2022-02, Vol.122, p.108887, Article 108887

2022

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Properties of boron-doped (113) oriented homoepitaxial diamond layers

Diamond and related materials, 2021-01, Vol.111, p.108223, Article 108223

2021

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Effect of Neutron Irradiation on High Voltage 4H-SiC Vertical JFET Characteristics: Characterization and Modeling

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3030-3036

2014

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Evaluation of the Input Impedance and Impedance Quality Factor of a Dipole in Spatial and Spectral Domains

Radioengineering, 2017-12, Vol.26 (4), p.968-971

2017

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ON-state characteristics of proton irradiated 4H–SiC Schottky diode: The calibration of model parameters for device simulation

Solid-state electronics, 2014-04, Vol.94, p.32-38

2014

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Excitation of a Conducting Cylinder Using the Theory of Characteristic Modes

Radioengineering, 2018-12, Vol.27 (4), p.956-960

2018

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Type I-type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition

Journal of physics. D, Applied physics, 2013-03, Vol.46 (9), p.095103-1-6

2013

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An Introduction to the Source Concept for Antennas

Radioengineering, 2016-04, Vol.25 (1), p.12-17

2016

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Radiation-Enhanced Diffusion of Palladium for a Local Lifetime Control in Power Devices

IEEE transactions on electron devices, 2007-06, Vol.54 (6), p.1521-1526

2007

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Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs

Thin solid films, 2013-09, Vol.543, p.83-87

2013

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Influence of radiation defects on formation of thermal donors in silicon irradiated with high-energy helium ions

Materials science & engineering. B, Solid-state materials for advanced technology, 2009-03, Vol.159, p.346-349

2009

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Lifetime control in SiC PiN diodes using radiation defects

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Software tools for efficient generation, modelling and optimisation of fractal radiating structures

IET microwaves, antennas & propagation, 2011-06, Vol.5 (8), p.1002-1002

2011

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Self-Assembled InAs/GaAs Quantum Dots Covered by Different Strain Reducing Layers Exhibiting Strong Photo- and Electroluminescence in 1.3 and 1.55 μm Bands

Journal of nanoscience and nanotechnology, 2011-08, Vol.11 (8), p.6804-6809

2011

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Vertical Schottky diode on (113) oriented homoepitaxial diamond

Diamond and related materials, 2024-06, Vol.146, p.111180, Article 111180

2024

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A Method for the Evaluation of Radiation Q Based on Modal Approach

IEEE transactions on antennas and propagation, 2012-10, Vol.60 (10), p.4556-4567

2012

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High-power P-i-N diode with local lifetime control using palladium diffusion controlled by radiation defects

IEEE electron device letters, 2005-12, Vol.26 (12), p.873-875

2005

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Optimum lifetime structuring in silicon power diodes by means of various irradiation techniques

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002, Vol.186 (1), p.414-418

2002

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Radiation Effects on 1.7kV Class 4H-SiC Power Devices: Development of Compact Simulation Models

Materials science forum, 2019-07, Vol.963, p.718-721

2019

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InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots

Journal of crystal growth, 2010-04, Vol.312 (8), p.1383-1387

2010

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Hydrogenation of platinum introduced in silicon by radiation enhanced diffusion

Materials science & engineering. B, Solid-state materials for advanced technology, 2009-03, Vol.159, p.342-345

2009

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Local lifetime control in silicon power diode by ion irradiation : introduction and stability of shallow donors

IET circuits, devices & systems, 2007-10, Vol.1 (5), p.321-326

2007

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Low-resistance ohmic contacts on boron-doped {113} oriented homoepitaxial diamond layers

Experimental demonstration of a microwave photonic link using an optically phased antenna array for a millimeter wave band

Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers

Effect of substrate crystalline orientation on boron-doped homoepitaxial diamond growth

Properties of boron-doped (113) oriented homoepitaxial diamond layers

Effect of Neutron Irradiation on High Voltage 4H-SiC Vertical JFET Characteristics: Characterization and Modeling

Evaluation of the Input Impedance and Impedance Quality Factor of a Dipole in Spatial and Spectral Domains

ON-state characteristics of proton irradiated 4H–SiC Schottky diode: The calibration of model parameters for device simulation

Excitation of a Conducting Cylinder Using the Theory of Characteristic Modes

Type I-type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition

An Introduction to the Source Concept for Antennas

Radiation-Enhanced Diffusion of Palladium for a Local Lifetime Control in Power Devices

Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs

Influence of radiation defects on formation of thermal donors in silicon irradiated with high-energy helium ions

Lifetime control in SiC PiN diodes using radiation defects

Software tools for efficient generation, modelling and optimisation of fractal radiating structures

Self-Assembled InAs/GaAs Quantum Dots Covered by Different Strain Reducing Layers Exhibiting Strong Photo- and Electroluminescence in 1.3 and 1.55 μm Bands

Vertical Schottky diode on (113) oriented homoepitaxial diamond

A Method for the Evaluation of Radiation Q Based on Modal Approach

High-power P-i-N diode with local lifetime control using palladium diffusion controlled by radiation defects

Optimum lifetime structuring in silicon power diodes by means of various irradiation techniques

Radiation Effects on 1.7kV Class 4H-SiC Power Devices: Development of Compact Simulation Models

InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots

Hydrogenation of platinum introduced in silicon by radiation enhanced diffusion

Local lifetime control in silicon power diode by ion irradiation : introduction and stability of shallow donors

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