UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 907

Sortiert nach

Near room temperature operation of a highly strained short wavelength (2.1 µm) AlAs/In0.84Ga0.16As/AlAs/InAlAs QWIP

Semiconductor science and technology, 2006-06, Vol.21 (6), p.813-817

2006

Link zum Volltext

Verfügbarkeit prüfen

Modeling and analysis of intraband absorption in quantum-dot-in-well mid-infrared photodetectors

Journal of applied physics, 2012-02, Vol.111 (3), p.033713-033713-6

2012

Link zum Volltext

Verfügbarkeit prüfen

Subband nonparabolicity estimated from multiple intersubband absorption in highly doped multiple quantum wells

Physical review. B, Condensed matter and materials physics, 2004-01, Vol.69 (3), Article 033303

2004

Link zum Volltext

Verfügbarkeit prüfen

Composting paper and grass clippings with anaerobically treated palm oil mill effluent

International journal of recycling of organic waste in agriculture, 2016-09, Vol.5 (3), p.221-230

2016

Link zum Volltext

Verfügbarkeit prüfen

Enhanced intersubband absorption in stepped double barrier quantum wells

Electronics letters, 2002-05, Vol.38 (11), p.529-530

2002

Link zum Volltext

Verfügbarkeit prüfen

Modeling of intraband absorption for quantum dot-in-well structures with low computational cost

Journal of physics. Conference series, 2010-07, Vol.242 (1), p.012013

2010

Link zum Volltext

Verfügbarkeit prüfen

Photoluminescence of GaSb grown by metal-organic vapour phase epitaxy

Semiconductor science and technology, 1991-01, Vol.6 (1), p.45-53

1991

Link zum Volltext

Verfügbarkeit prüfen

Intersubband absorption from 2 to 7 μm in strain-compensated double-barrier InxGa1-xAs multiquantum wells

Semiconductor science and technology, 2004-11, Vol.19 (11), p.1263-1267

2004

Link zum Volltext

Verfügbarkeit prüfen

A comparison of 1.55 mu m distributed Bragg reflector stacks for use in multi quantum well micro resonator modulators

Semiconductor science and technology, 1995-09, Vol.10 (9), p.1283-1286, Article 1283

1995

Link zum Volltext

Verfügbarkeit prüfen

Photovoltaic operation up to 270 K of a strain-compensated AlAs∕In0.84Ga0.16As∕AlAs∕InAlAs quantum well infrared photodetector

Applied physics letters, 2005-11, Vol.87 (19)

2005

Link zum Volltext

Verfügbarkeit prüfen

Resonant cavity-enhanced (RCE) photodetector based on Ga(In)Sb for gas-sensing applications

Semiconductor science and technology, 1995-07, Vol.10 (7), p.1017-1021

1995

Link zum Volltext

Verfügbarkeit prüfen

GaSb/GaInSb quantum wells grown by metalorganic vapor phase epitaxy

Applied physics letters, 1989-03, Vol.54 (10), p.922-924

1989

Link zum Volltext

Verfügbarkeit prüfen

Long-wavelength GaAs/AlAs distributed Bragg reflectors for use in GaSb-based resonant cavity detectors

Electronics letters, 1995-02, Vol.31 (3), p.200-202

1995

Link zum Volltext

Verfügbarkeit prüfen

Photoconductivity studies of InAsP/InP heterostructures in applied magnetic and electric fields

Semiconductor science and technology, 1996-01, Vol.11 (1), p.34-38

1996

Link zum Volltext

Verfügbarkeit prüfen

Intersubband absorption in strain-compensated InAlAs/AlAs/InxGa(1−x)As (x∼0.8) quantum wells grown on InP

Journal of applied physics, 2003-05, Vol.93 (10), p.6065-6067

2003

Link zum Volltext

Verfügbarkeit prüfen

GaAs/GaSb strained-layer heterostructures deposited by metalorganic vapor phase epitaxy

Applied physics letters, 1989-03, Vol.54 (13), p.1241-1243

1989

Link zum Volltext

Verfügbarkeit prüfen

Growth of GaSb by MOVPE

Semiconductor science and technology, 1988-04, Vol.3 (4), p.315-320

1988

Link zum Volltext

Verfügbarkeit prüfen

Room temperature photoluminescence at 4.5 μ m from InAsN

Journal of applied physics, 2008-03, Vol.103 (6), p.063520-063520-4

2008

Link zum Volltext

Verfügbarkeit prüfen

Demonstration of a blueshift in type II asymmetric InP/InAsP/InGaAs multiple quantum wells

Journal of applied physics, 2003-09, Vol.94 (5), p.3222-3228

2003

Link zum Volltext

Verfügbarkeit prüfen

Devices and desires in the 2-4 mu m region based on antimony-containing III-V heterostructures grown by MOVPE

Semiconductor science and technology, 1993-01, Vol.8 (1S), p.S380-S385

1993

Link zum Volltext

Verfügbarkeit prüfen

THERMOPHOTOVOLTAICS: CAN THEY MAKE A SIGNIFICANT CONTRIBUTION ?

Energy & environment (Essex, England), 2000-01, Vol.11 (1), p.81-91

Haywood, S.K.

2000

Link zum Volltext

Verfügbarkeit prüfen

Growth of InAs by MOVPE using TBAs and TMIn

Journal of electronic materials, 1990-08, Vol.19 (8), p.783-788

1990

Link zum Volltext

Verfügbarkeit prüfen

Growth of InAs by MOVPE: A comparative study using arsine, tertiarybutylarsine and phenylarsine

Journal of crystal growth, 1989-09, Vol.97 (2), p.489-496

1989

Link zum Volltext

Verfügbarkeit prüfen

Strain reconstruction of the valence band in Ga1-xInxSb/GaSb quantum wells

Surface science, 1990-04, Vol.228 (1-3), p.270-274

1990

Link zum Volltext

Verfügbarkeit prüfen

Hole trapping and interface state generation during bias-temperature stress of SiO2 layers

Applied physics letters, 1985-01, Vol.47 (4), p.381-383

1985

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 907

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(802)
Mit Volltextzugriff
(786)

Publikationsform

4 weitere anzeigen...

Weniger anzeigen...

Sprache

2 weitere anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(4)

Menü

Weitere Dienste

Einstellungen

Near room temperature operation of a highly strained short wavelength (2.1 µm) AlAs/In0.84Ga0.16As/AlAs/InAlAs QWIP

Modeling and analysis of intraband absorption in quantum-dot-in-well mid-infrared photodetectors

Subband nonparabolicity estimated from multiple intersubband absorption in highly doped multiple quantum wells

Composting paper and grass clippings with anaerobically treated palm oil mill effluent

Enhanced intersubband absorption in stepped double barrier quantum wells

Modeling of intraband absorption for quantum dot-in-well structures with low computational cost

Photoluminescence of GaSb grown by metal-organic vapour phase epitaxy

Intersubband absorption from 2 to 7 μm in strain-compensated double-barrier InxGa1-xAs multiquantum wells

A comparison of 1.55 mu m distributed Bragg reflector stacks for use in multi quantum well micro resonator modulators

Photovoltaic operation up to 270 K of a strain-compensated AlAs∕In0.84Ga0.16As∕AlAs∕InAlAs quantum well infrared photodetector

Resonant cavity-enhanced (RCE) photodetector based on Ga(In)Sb for gas-sensing applications

GaSb/GaInSb quantum wells grown by metalorganic vapor phase epitaxy

Long-wavelength GaAs/AlAs distributed Bragg reflectors for use in GaSb-based resonant cavity detectors

Photoconductivity studies of InAsP/InP heterostructures in applied magnetic and electric fields

Intersubband absorption in strain-compensated InAlAs/AlAs/InxGa(1−x)As (x∼0.8) quantum wells grown on InP

GaAs/GaSb strained-layer heterostructures deposited by metalorganic vapor phase epitaxy

Growth of GaSb by MOVPE

Room temperature photoluminescence at 4.5 μ m from InAsN

Demonstration of a blueshift in type II asymmetric InP/InAsP/InGaAs multiple quantum wells

Devices and desires in the 2-4 mu m region based on antimony-containing III-V heterostructures grown by MOVPE

THERMOPHOTOVOLTAICS: CAN THEY MAKE A SIGNIFICANT CONTRIBUTION ?

Growth of InAs by MOVPE using TBAs and TMIn

Growth of InAs by MOVPE: A comparative study using arsine, tertiarybutylarsine and phenylarsine

Strain reconstruction of the valence band in Ga1-xInxSb/GaSb quantum wells

Hole trapping and interface state generation during bias-temperature stress of SiO2 layers

Suchergebnisse filtern