UB Paderborn / Katalog / Suche / in CDI

Dry etching of GaN and related materials: comparison of techniques

IEEE journal of selected topics in quantum electronics, 1998-05, Vol.4 (3), p.557-563

1998

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IEEE_Xplore

Effect of inert gas additive species on Cl2 high density plasma etching of compound semiconductors

Applied surface science, 1999-05, Vol.147 (1-4), p.207-214

1999

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Effect of inert gas additive species on Cl2 high density plasma etching of compound semiconductors

Applied surface science, 1999-05, Vol.147 (1-4), p.215-221

1999

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Selective dry etching using inductively coupled plasmas

Applied surface science, 1999-05, Vol.147 (1-4), p.125-133

1999

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Mechanism of IR Photoresponse in Nanopatterned InAs/GaAs Quantum Dot p-i-n Photodiodes

IEEE journal of quantum electronics, 2010-05, Vol.46 (5), p.832-836

2010

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IEEE_Xplore

Surface morphology and removal rates for dry- and wet-etched novel resonator materials

Applied surface science, 2000-09, Vol.165 (2-3), p.127-134

2000

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Surface morphology and removal rates for dry- and wet-etched novel resonator materials

Applied surface science, 2000-09, Vol.165 (2-3), p.135-140

2000

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Surface morphology and removal rates for dry- and wet-etched novel resonator materials: Part I: La 3Ga 5.5Ta 0.5O 14

Applied surface science, 2000, Vol.165 (2), p.127-134

2000

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Surface morphology and removal rates for dry- and wet-etched novel resonator materials: Part II. La 3Ga 5.5Nb 0.5O 14

Applied surface science, 2000, Vol.165 (2), p.135-140

2000

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Effect of inert gas additive species on Cl 2 high density plasma etching of compound semiconductors : Part II. InP, InSb, InGaP and InGaAs

Applied surface science, 1999-05, Vol.147 (1), p.215-221

1999

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Effect of inert gas additive species on Cl 2 high density plasma etching of compound semiconductors : Part I. GaAs and GaSb

Applied surface science, 1999-05, Vol.147 (1), p.207-214

1999

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Cl 2-based inductively coupled plasma etching of CoFeB, CoSm, CoZr and FeMn

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-06, Vol.60 (2), p.101-106

1999

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Cl2-based inductively coupled plasma etching of CoFeB, CoSm, CoZr and FeMn

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-06, Vol.60 (2), p.101-106

1999

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High selectivity Inductively Coupled Plasma etching of GaAs over InGaP

Applied surface science, 2000-02, Vol.156 (1), p.76-84

2000

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III-nitride dry etching: Comparison of inductively coupled plasma chemistries

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1999-07, Vol.17 (4), p.2202-2208

1999

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Selective dry etching using inductively coupled plasmas: Part II. InN/GaN and InN/AlN

Applied surface science, 1999, Vol.147 (1), p.134-139

1999

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Comparison of ICl- and IBr-based plasma chemistries for inductively coupled plasma etching of GaN, InN and AlN

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-06, Vol.60 (2), p.95-100

1999

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Selective dry etching using inductively coupled plasmas

Applied surface science, 1999-05, Vol.147 (1-4), p.134-139

1999

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Selective dry etching using inductively coupled plasmas: Part I. GaAs/AlGaAs and GaAs/InGaP

Applied surface science, 1999, Vol.147 (1), p.125-133

1999

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Interhalogen plasma chemistries for dry etch patterning of Ni, Fe, NiFe and NiFeCo thin films

Applied surface science, 1999-02, Vol.140 (1), p.215-222

1999

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Damage to III–V devices during electron cyclotron resonance chemical vapor deposition

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1999-07, Vol.17 (4), p.2183-2187

1999

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Inductively coupled plasma etching of CoFeB, CoZr, CoSm and FeMn thin films in interhalogen mixtures

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-06, Vol.60 (2), p.107-111

1999

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Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar AND Cl2/He

MRS proceedings, 1998, Vol.537

1998

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Inductively Coupled Plasma Etching of III-Nitrides in Cl 2 /Xe, Cl 2 /Ar AND Cl 2 /He

MRS proceedings, 1998, Vol.537, Article G6.56

1998

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Inductively Coupled Plasma Etching of III-Nitrides in Cl 2 /Xe, Cl 2 /Ar and Cl 2 /He

MRS Internet journal of nitride semiconductor research, 1999, Vol.4 (S1), p.763-768

1999

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Dry etching of GaN and related materials: comparison of techniques

Effect of inert gas additive species on Cl2 high density plasma etching of compound semiconductors

Effect of inert gas additive species on Cl2 high density plasma etching of compound semiconductors

Selective dry etching using inductively coupled plasmas

Mechanism of IR Photoresponse in Nanopatterned InAs/GaAs Quantum Dot p-i-n Photodiodes

Surface morphology and removal rates for dry- and wet-etched novel resonator materials

Surface morphology and removal rates for dry- and wet-etched novel resonator materials

Surface morphology and removal rates for dry- and wet-etched novel resonator materials: Part I: La 3Ga 5.5Ta 0.5O 14

Surface morphology and removal rates for dry- and wet-etched novel resonator materials: Part II. La 3Ga 5.5Nb 0.5O 14

Effect of inert gas additive species on Cl 2 high density plasma etching of compound semiconductors : Part II. InP, InSb, InGaP and InGaAs

Effect of inert gas additive species on Cl 2 high density plasma etching of compound semiconductors : Part I. GaAs and GaSb

Cl 2-based inductively coupled plasma etching of CoFeB, CoSm, CoZr and FeMn

Cl2-based inductively coupled plasma etching of CoFeB, CoSm, CoZr and FeMn

High selectivity Inductively Coupled Plasma etching of GaAs over InGaP

III-nitride dry etching: Comparison of inductively coupled plasma chemistries

Selective dry etching using inductively coupled plasmas: Part II. InN/GaN and InN/AlN

Comparison of ICl- and IBr-based plasma chemistries for inductively coupled plasma etching of GaN, InN and AlN

Selective dry etching using inductively coupled plasmas

Selective dry etching using inductively coupled plasmas: Part I. GaAs/AlGaAs and GaAs/InGaP

Interhalogen plasma chemistries for dry etch patterning of Ni, Fe, NiFe and NiFeCo thin films

Damage to III–V devices during electron cyclotron resonance chemical vapor deposition

Inductively coupled plasma etching of CoFeB, CoZr, CoSm and FeMn thin films in interhalogen mixtures

Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar AND Cl2/He

Inductively Coupled Plasma Etching of III-Nitrides in Cl 2 /Xe, Cl 2 /Ar AND Cl 2 /He

Inductively Coupled Plasma Etching of III-Nitrides in Cl 2 /Xe, Cl 2 /Ar and Cl 2 /He

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