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The metabolic basis of arginine nutrition and pharmacotherapy

Biomedicine & pharmacotherapy, 2002-11, Vol.56 (9), p.427-438

2002

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Hall effect and Raman analysis of residual damage and free electron concentration in Si-implanted GaAs: a quest for better doping efficiency

The Journal of physics and chemistry of solids, 2005-07, Vol.66 (7), p.1158-1163

2005

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Oriented, single domain Fe nanoparticle layers in single crystal yttria-stabilized zirconia

IEEE transactions on magnetics, 2001-07, Vol.37 (4), p.2197-2199

2001

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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Journal of applied physics, 1997-05, Vol.81 (9), p.6031-6050

1997

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Efficient production of silicon-on-insulator films by co-implantation of He+ with H

Applied physics letters, 1998-03, Vol.72 (9), p.1086-1088

1998

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Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation

Applied physics letters, 1998-12, Vol.73 (25), p.3721-3723

1998

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Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

Applied physics letters, 1999-03, Vol.74 (9), p.1299-1301

1999

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Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling

Applied physics letters, 1998-11, Vol.73 (20), p.2980-2982

1998

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Boron-enhanced diffusion of boron from ultralow-energy ion implantation

Applied physics letters, 1999-04, Vol.74 (17), p.2435-2437

1999

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Reduction of transient diffusion from 1–5 keV Si+ ion implantation due to surface annihilation of interstitials

Applied physics letters, 1997-11, Vol.71 (21), p.3141-3143

1997

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Study of the effect of ion implantation on the electrical and microstructural properties of tin-doped indium oxide thin films

Journal of applied physics, 1993-04, Vol.73 (8), p.3805-3811

1993

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Electrical properties of heteroepitaxial grown tin-doped indium oxide films

Journal of applied physics, 1996-07, Vol.80 (2), p.978-984

1996

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Ta-based interface ohmic contacts to AlGaN/GaN heterostructures

Journal of applied physics, 2001-05, Vol.89 (10), p.5543-5546

2001

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Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon

Applied physics letters, 1996-09, Vol.69 (10), p.1376-1378

1996

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The interstitial fraction of diffusivity of common dopants in Si

Applied physics letters, 1997-12, Vol.71 (26), p.3862-3864

1997

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Interstitial defects in silicon from 1–5 keV Si+ ion implantation

Applied physics letters, 1997-06, Vol.70 (25), p.3332-3334

1997

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Iron gettering mechanisms in silicon

Journal of applied physics, 1996-09, Vol.80 (6), p.3275-3284

1996

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Amorphization Threshold in Si-Implanted Strained Sige Alloy Layers

MRS proceedings, 1994, Vol.373, Article 511

1994

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Transient enhanced diffusion of Sb and B due to MeV silicon implants

Applied physics letters, 1997-06, Vol.70 (24), p.3281-3283

1997

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Switchable reflectivity on silicon from a composite VO{sub 2}-SiO{sub 2} protecting layer

Applied physics letters, 2004-08, Vol.85 (8)

2004

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Use of x-ray microbeams for cross-section depth profiling of MeV ion-implantation-induced defect clusters in Si

Applied physics letters, 1999-11, Vol.75 (18), p.2791-2793

1999

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Comparative study of implantation-induced damage in GaAs and Ge : temperature and flux dependence

Applied physics letters, 1991-07, Vol.59 (4), p.452-454

1991

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Particle–solid interactions and 21st century materials science

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003-12, Vol.212, p.1-7

2003

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Implant damage and transient enhanced diffusion in Si

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1995-12, Vol.106 (1), p.191-197

1995

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Ta-based advancing interface ohmic contacts to AlGaN/GaN heterostructures

Journal of applied physics, 2002-02, Vol.89 (10)

2002

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The metabolic basis of arginine nutrition and pharmacotherapy

Hall effect and Raman analysis of residual damage and free electron concentration in Si-implanted GaAs: a quest for better doping efficiency

Oriented, single domain Fe nanoparticle layers in single crystal yttria-stabilized zirconia

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Efficient production of silicon-on-insulator films by co-implantation of He+ with H

Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation

Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling

Boron-enhanced diffusion of boron from ultralow-energy ion implantation

Reduction of transient diffusion from 1–5 keV Si+ ion implantation due to surface annihilation of interstitials

Study of the effect of ion implantation on the electrical and microstructural properties of tin-doped indium oxide thin films

Electrical properties of heteroepitaxial grown tin-doped indium oxide films

Ta-based interface ohmic contacts to AlGaN/GaN heterostructures

Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon

The interstitial fraction of diffusivity of common dopants in Si

Interstitial defects in silicon from 1–5 keV Si+ ion implantation

Iron gettering mechanisms in silicon

Amorphization Threshold in Si-Implanted Strained Sige Alloy Layers

Transient enhanced diffusion of Sb and B due to MeV silicon implants

Switchable reflectivity on silicon from a composite VO{sub 2}-SiO{sub 2} protecting layer

Use of x-ray microbeams for cross-section depth profiling of MeV ion-implantation-induced defect clusters in Si

Comparative study of implantation-induced damage in GaAs and Ge : temperature and flux dependence

Particle–solid interactions and 21st century materials science

Implant damage and transient enhanced diffusion in Si

Ta-based advancing interface ohmic contacts to AlGaN/GaN heterostructures

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