UB Paderborn / Katalog / Suche / in CDI

Material Characterization of Ge1−x Sn x Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications

Journal of electronic materials, 2014-04, Vol.43 (4), p.938-946

2014

Volltextzugriff (PDF)

Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures

Applied physics letters, 2012-10, Vol.101 (18)

2012

Volltextzugriff (PDF)

Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

AIP advances, 2013-07, Vol.3 (7), p.072112-072112

2013

Volltextzugriff (PDF)

Digitally Alloyed Modulated Precursor Flow Epitaxial Growth of Ternary AlGaN with Binary AlN and GaN Sub-Layers and Observation of Compositional Inhomogeneity

Journal of electronic materials, 2010-05, Vol.39 (5), p.466-472

2010

Volltextzugriff (PDF)

Silver disposition and dynamics during electroless metal thin film synthesis

Journal of materials chemistry, 2012-11, Vol.22 (41), p.21942-21953

2012

Volltextzugriff (PDF)

Mg induced compositional change in InGaN alloys

Semiconductor science and technology, 2019-02, Vol.34 (2), p.25014

2019

Volltextzugriff (PDF)

Effect of charged dislocation scattering on electrical and electrothermal transport in n -type InN

Physical review. B, Condensed matter and materials physics, 2011-08, Vol.84 (7), Article 075315

2011

Volltextzugriff (PDF)

Synthesis of New Nitride Alloys with Mg by Plasma‐Assisted Molecular Beam Epitaxy

physica status solidi (b), 2020-09, Vol.257 (9), p.n/a

2020

Volltextzugriff (PDF)

InGaN Thin Films Grown by ENABLE and MBE Techniques on Silicon Substrates

MRS proceedings, 2008-01, Vol.1068, Article 1068-C06-02

2008

Volltextzugriff (PDF)

Polypeptide-Assisted Organization of π‑Conjugated Polymers into Responsive, Soft 3D Networks

Chemistry of materials, 2017-06, Vol.29 (12), p.5058-5062

2017

Volltextzugriff (PDF)

Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2014-03, Vol.32 (2)

2014

Volltextzugriff (PDF)

MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-05, Vol.31 (3)

2013

Volltextzugriff (PDF)

Material Characterization of Ge^sub 1-x^Sn^sub x^ Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications

Journal of electronic materials, 2014-04, Vol.43 (4), p.938

2014

Volltextzugriff (PDF)

Open core threading dislocations in GaN grown by hydride vapour phase epitaxy

Philosophical magazine (Abingdon, England), 2006-10, Vol.86 (29-31), p.4747-4756

2006

Volltextzugriff (PDF)

Material Characterization of Ge1−xSnx Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications

Journal of electronic materials, 2014, Vol.43 (4), p.938-946

2014

Volltextzugriff (PDF)

Silver disposition and dynamics during electroless metal thin film synthesisElectronic supplementary information (ESI) available as noted in text. See DOI: 10.1039/c2jm34208a

2012-10

Volltextzugriff (PDF)

Erratic Dislocations within Funnel Defects in AlN Templates for AlGaNEpitaxial Layer Growth

Applied physics letters, 2009-03

2009

Volltextzugriff (PDF)

The Structural Quality of AlxGa1-xN Epitaxial Layers Grown by Digitally-AlloyedModulated Precursor Epitaxy Determined by Transmission Electron Microscopy

Applied physics letters, 2008-10

2008

Volltextzugriff (PDF)

Digitally Alloyed Modulated Precursor Flow Epitaxial Growthof Ternary AlGaN with Binary AlN and GaN Sub-Layersand Observation of Compositional Inhomogeneity

Journal of electronic materials, 2010-05, Vol.39 (5), p.466-472

2010

Volltextzugriff (PDF)

Digitally Alloyed Modulated Precursor Flow Epitaxial Growth of Ternary AlGaN with Binary AIN and GaN Sub-Layers and Observation of Compositional Inhomogeneity: Group III Nitrides, Silicon Carbide, and Zinc Oxide

Journal of electronic materials, 2010, Vol.39 (5), p.466-472

2010

Volltextzugriff (PDF)

Oxygen Segregation to Nanopipes in Gallium Nitride

MRS proceedings, 2005, Vol.892, Article 0892-FF22-05

2005

Volltextzugriff (PDF)

Stacking faults and phase changes in Mg-doped InGaN grown on Si

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S421-S424

2009

Volltextzugriff (PDF)

Molecular beam epitaxial growth of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

AIP advances, 2013-07, Vol.3 (7)

2013

Volltextzugriff (PDF)

Combining virtual exchange with challenge-based learning: the experience of the “Virtual Environmental Challenge”

Journal of virtual exchange, 2023-12, Vol.6 (SI-TransferableSkills), p.60-70

2023

Volltextzugriff (PDF)

The Virtual Environmental Challenge: Language for Specific Purposes Teaching and Learning in an International Context

Recherche et pratiques pédagogiques en langues de spécialité, 2023-01, Vol.42 (2)

2023

Volltextzugriff (PDF)

Menü

Weitere Dienste

Einstellungen

Material Characterization of Ge1−x Sn x Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications

Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures

Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

Digitally Alloyed Modulated Precursor Flow Epitaxial Growth of Ternary AlGaN with Binary AlN and GaN Sub-Layers and Observation of Compositional Inhomogeneity

Silver disposition and dynamics during electroless metal thin film synthesis

Mg induced compositional change in InGaN alloys

Effect of charged dislocation scattering on electrical and electrothermal transport in n -type InN

Synthesis of New Nitride Alloys with Mg by Plasma‐Assisted Molecular Beam Epitaxy

InGaN Thin Films Grown by ENABLE and MBE Techniques on Silicon Substrates

Polypeptide-Assisted Organization of π‑Conjugated Polymers into Responsive, Soft 3D Networks

Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy

MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures

Material Characterization of Ge^sub 1-x^Sn^sub x^ Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications

Open core threading dislocations in GaN grown by hydride vapour phase epitaxy

Material Characterization of Ge1−xSnx Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications

Silver disposition and dynamics during electroless metal thin film synthesisElectronic supplementary information (ESI) available as noted in text. See DOI: 10.1039/c2jm34208a

Erratic Dislocations within Funnel Defects in AlN Templates for AlGaNEpitaxial Layer Growth

The Structural Quality of AlxGa1-xN Epitaxial Layers Grown by Digitally-AlloyedModulated Precursor Epitaxy Determined by Transmission Electron Microscopy

Digitally Alloyed Modulated Precursor Flow Epitaxial Growthof Ternary AlGaN with Binary AlN and GaN Sub-Layersand Observation of Compositional Inhomogeneity

Digitally Alloyed Modulated Precursor Flow Epitaxial Growth of Ternary AlGaN with Binary AIN and GaN Sub-Layers and Observation of Compositional Inhomogeneity: Group III Nitrides, Silicon Carbide, and Zinc Oxide

Oxygen Segregation to Nanopipes in Gallium Nitride

Stacking faults and phase changes in Mg-doped InGaN grown on Si

Molecular beam epitaxial growth of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

Combining virtual exchange with challenge-based learning: the experience of the “Virtual Environmental Challenge”

The Virtual Environmental Challenge: Language for Specific Purposes Teaching and Learning in an International Context

Suchergebnisse filtern