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Admissible and Inadmissible Simplifications of Variational Methods in Finite Element Analysis

Variational Methods in the Mechanics of Solids, 1980, p.187-198

1980

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Assembly of an aperture plate system for projection mask-less lithography

Microelectronic engineering, 2006-04, Vol.83 (4), p.980-983

2006

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Comparison of silicon stencil mask distortion measurements with finite element analysis

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999-11, Vol.17 (6), p.3107-3111

1999

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Control of electron transfer in conjugated polymer/fullerene heterostructures

Synthetic metals, 1999-05, Vol.101 (1-3), p.285-286

1999

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Directly sputtered stress-compensated carbon protective layer for silicon stencil masks

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999-11, Vol.17 (6), p.3127-3131

1999

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Exciton diffusion and dissociation in conjugated polymer/fullerene blends and heterostructures

Physical review. B, Condensed matter, 1999-06, Vol.59 (23), p.15346-15351

1999

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Experimental evaluation of an optimized radiation cooling geometry for ion projection lithography masks

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000-11, Vol.18 (6), p.3207-3209

2000

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Finite element simulation of ion-beam lithography mask fabrication

Microelectronic engineering, 1999, Vol.46 (1), p.485-488

1999

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Ein heterogenes wissensbasiertes Konfigurierungssystem

Informatik in der Praxis, p.431-445

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The High-resolution Intermediate Complexity Atmospheric Research (HICAR v1.1) model enables fast dynamic downscaling to the hectometer scale

Geoscientific Model Development, 2023-09, Vol.16 (17), p.5049-5068

2023

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High-speed data storage and processing for projection mask-less lithography systems

Microelectronic engineering, 2006-04, Vol.83 (4), p.976-979

2006

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Influence of Silicon on Insulator Wafer Stress Properties on Placement Accuracy of Stencil Masks

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 6B), p.4146-4149, Article 4146

2002

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Influence of SOI wafer stress properties on placement accuracy of stencil masks

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468), 2001, p.44

2001

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Mechanical characterization of membrane like microelectronic components

Microelectronic engineering, 2006-04, Vol.83 (4), p.1036-1042

2006

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A new penalty function element for thin shell analysis

International journal for numerical methods in engineering, 1982-06, Vol.18 (6), p.845-861

Haugeneder, E.

1982

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On an Improper Modification of a Variational Principle for Finite Element Plate Analysis

Zeitschrift für angewandte Mathematik und Mechanik, 1979, Vol.59 (11), p.637-640

1979

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Optimization of the temperature distribution across stencil mask membranes under ion beam exposure

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1998-11, Vol.16 (6), p.3602-3605

1998

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p-n junction-based wafer flow process for stencil mask fabrication

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1998-11, Vol.16 (6), p.3592-3598

1998

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A preprocessor for the finite element program SAP IV

International journal for numerical methods in engineering, 1981-12, Vol.17 (12), p.1779-1789

1981

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SICONFEX: ein Expertensystem für die Konfigurierung eines Betriebssystems

GI/OCG/ÖGI-Jahrestagung 1985, p.792-805

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Strain inhomogeneity mapping in single-crystal layers and membranes by X-ray diffractometry

Journal of applied crystallography, 2002-02, Vol.35 (1), p.17-20

2002

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Stress relief structures for ion-beam projection lithography masks

Microelectronic engineering, 1999, Vol.46 (1), p.481-484

1999

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Thermal emissivity of carbon coated p-doped silicon stencil masks for ion projection lithography

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003-01, Vol.21 (1), p.123-126

2003

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Zur Berechnun? ?ro er Verformun?en von ?ekr mmten St ben

Ingenieur-Archiv, 1981, Vol.50 (6), p.401-411

1981

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Admissible and Inadmissible Simplifications of Variational Methods in Finite Element Analysis

Assembly of an aperture plate system for projection mask-less lithography

Comparison of silicon stencil mask distortion measurements with finite element analysis

Control of electron transfer in conjugated polymer/fullerene heterostructures

Directly sputtered stress-compensated carbon protective layer for silicon stencil masks

Exciton diffusion and dissociation in conjugated polymer/fullerene blends and heterostructures

Experimental evaluation of an optimized radiation cooling geometry for ion projection lithography masks

Finite element simulation of ion-beam lithography mask fabrication

Ein heterogenes wissensbasiertes Konfigurierungssystem

The High-resolution Intermediate Complexity Atmospheric Research (HICAR v1.1) model enables fast dynamic downscaling to the hectometer scale

High-speed data storage and processing for projection mask-less lithography systems

Influence of Silicon on Insulator Wafer Stress Properties on Placement Accuracy of Stencil Masks

Influence of SOI wafer stress properties on placement accuracy of stencil masks

Mechanical characterization of membrane like microelectronic components

A new penalty function element for thin shell analysis

On an Improper Modification of a Variational Principle for Finite Element Plate Analysis

Optimization of the temperature distribution across stencil mask membranes under ion beam exposure

p-n junction-based wafer flow process for stencil mask fabrication

A preprocessor for the finite element program SAP IV

SICONFEX: ein Expertensystem für die Konfigurierung eines Betriebssystems

Strain inhomogeneity mapping in single-crystal layers and membranes by X-ray diffractometry

Stress relief structures for ion-beam projection lithography masks

Thermal emissivity of carbon coated p-doped silicon stencil masks for ion projection lithography

Zur Berechnun? ?ro er Verformun?en von ?ekr mmten St ben

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