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Engineering transient hyperbolic metamaterials using InAsSb-based semiconductor

AIP advances, 2021-07, Vol.11 (7), p.075115-075115-5

2021

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Carrier reduction studies of type-II superlattice materials for very long wavelength infrared sensing

Journal of applied physics, 2019-01, Vol.125 (2)

2019

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Exploring optimum growth for high quality InAs/GaSb type-II superlattices

Journal of crystal growth, 2004-02, Vol.261 (4), p.471-478

2004

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Study of bulk carrier properties in largely hybridized InAsSb/GaSb superlattice materials

Journal of applied physics, 2023-01, Vol.133 (2)

2023

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Design and growth of short-period long wavelength infrared InAsSb/InAsSb superlattices on lattice engineered metamorphic buffers

Journal of applied physics, 2020-07, Vol.128 (4)

2020

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Optimization of hybridized InAsSb/InGaSb semiconductor topological materials

Applied physics letters, 2022-08, Vol.121 (6)

2022

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Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

AIP advances, 2015-09, Vol.5 (9), p.097219-097219-8

2015

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Shubnikov–de Haas Effect in InGaSb/InAs superlattices

Journal of applied physics, 2017-11, Vol.122 (18)

2017

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InAs/GaSb type-II superlattices for high performance mid-infrared detectors

Journal of crystal growth, 2005-05, Vol.278 (1), p.198-202

2005

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Multicarrier transport in InGaSb/InAs superlattice structures

Journal of applied physics, 2016-11, Vol.120 (17)

2016

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Hierarchically constrained carrier dynamics in red-LED illuminated type-II InAs/GaSb superlattices

Journal of applied physics, 2016-10, Vol.120 (14)

2016

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Control of anion incorporation in the molecular beam epitaxy of ternary antimonide superlattices for very long wavelength infrared detection

Journal of crystal growth, 2015-09, Vol.425, p.25-28

2015

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Short-period InAs∕GaSb type-II superlattices for mid-infrared detectors

Applied physics letters, 2005-12, Vol.87 (26)

2005

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Demonstration of long minority carrier lifetimes in very narrow bandgap ternary InAs/GaInSb superlattices

Applied physics letters, 2015-09, Vol.107 (13)

2015

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Texture and surface analysis of thin-film GaAs on glass formed by pulsed-laser deposition

Journal of non-crystalline solids, 2006-02, Vol.352 (2), p.193-196

2006

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Optimization of mid-infrared InAs∕GaSb type-II superlattices

Applied physics letters, 2004-06, Vol.84 (26), p.5410-5412

2004

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Impact of growth temperature on InAs/GaInSb strained layer superlattices for very long wavelength infrared detection

Applied physics letters, 2012-10, Vol.101 (17)

2012

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Post growth annealing study on long wavelength infrared InAs/GaSb superlattices

Journal of applied physics, 2012-03, Vol.111 (5), p.053113-053113-4

2012

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Demonstration of interface-scattering-limited electron mobilities in InAs∕GaSb superlattices

Journal of applied physics, 2007-02, Vol.101 (4)

2007

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Pushing the envelope to the maximum: Short-period InAs/GaSb type-II superlattices for mid-infrared detectors

Physica. E, Low-dimensional systems & nanostructures, 2006-05, Vol.32 (1), p.289-292

2006

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Band gap tuning of InAs∕GaSb type-II superlattices for mid-infrared detection

Journal of applied physics, 2004-09, Vol.96 (5), p.2580-2585

2004

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Optimizing residual carriers in undoped InAs/GaSb superlattices for high operating temperature mid-infrared detectors

Journal of crystal growth, 2009-03, Vol.311 (7), p.1897-1900

2009

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Strain Analysis of Compositionally Tailored Interfaces in InAs/GaSb Superlattices by Aberration Corrected Transmission Electron Microscopy

Microscopy and microanalysis, 2012-07, Vol.18 (S2), p.1808-1809

2012

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Growth of short-period InAs∕GaSb superlattices

Journal of applied physics, 2006-12, Vol.100 (12)

2006

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Optical and electrical quality improvements of undoped InAs∕GaSb superlattices

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-05, Vol.28 (3), p.C3-C3C24

2010

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Engineering transient hyperbolic metamaterials using InAsSb-based semiconductor

Carrier reduction studies of type-II superlattice materials for very long wavelength infrared sensing

Exploring optimum growth for high quality InAs/GaSb type-II superlattices

Study of bulk carrier properties in largely hybridized InAsSb/GaSb superlattice materials

Design and growth of short-period long wavelength infrared InAsSb/InAsSb superlattices on lattice engineered metamorphic buffers

Optimization of hybridized InAsSb/InGaSb semiconductor topological materials

Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

Shubnikov–de Haas Effect in InGaSb/InAs superlattices

InAs/GaSb type-II superlattices for high performance mid-infrared detectors

Multicarrier transport in InGaSb/InAs superlattice structures

Hierarchically constrained carrier dynamics in red-LED illuminated type-II InAs/GaSb superlattices

Control of anion incorporation in the molecular beam epitaxy of ternary antimonide superlattices for very long wavelength infrared detection

Short-period InAs∕GaSb type-II superlattices for mid-infrared detectors

Demonstration of long minority carrier lifetimes in very narrow bandgap ternary InAs/GaInSb superlattices

Texture and surface analysis of thin-film GaAs on glass formed by pulsed-laser deposition

Optimization of mid-infrared InAs∕GaSb type-II superlattices

Impact of growth temperature on InAs/GaInSb strained layer superlattices for very long wavelength infrared detection

Post growth annealing study on long wavelength infrared InAs/GaSb superlattices

Demonstration of interface-scattering-limited electron mobilities in InAs∕GaSb superlattices

Pushing the envelope to the maximum: Short-period InAs/GaSb type-II superlattices for mid-infrared detectors

Band gap tuning of InAs∕GaSb type-II superlattices for mid-infrared detection

Optimizing residual carriers in undoped InAs/GaSb superlattices for high operating temperature mid-infrared detectors

Strain Analysis of Compositionally Tailored Interfaces in InAs/GaSb Superlattices by Aberration Corrected Transmission Electron Microscopy

Growth of short-period InAs∕GaSb superlattices

Optical and electrical quality improvements of undoped InAs∕GaSb superlattices

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