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Improvement of Read Disturb, Program Disturb and Data Retention by Memory Cell VTH Optimization of Ferroelectric (Fe)-NAND Flash Memories for Highly Reliable and Low Power Enterprise Solid-State Drives (SSDs)

IEICE transactions on electronics, 2011, Vol.E94-C (4), p.539-547

2011

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One by one single-electron transport in nanomechanical Coulomb blockade shuttle

Applied physics letters, 2007-07, Vol.91 (5), p.053120-053120-3

2007

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Initialize and Weak-Program Erasing Scheme for High-Performance and High-Reliability Ferroelectric NAND Flash Solid-State Drive

IEICE transactions on electronics, 2012, Vol.E95.C (4), p.609-616

2012

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NAND Controller System With Channel Number Detection and Feedback for Power-Efficient High-Speed 3D-SSD

IEEE journal of solid-state circuits, 2012-06, Vol.47 (6), p.1460-1468

2012

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Experimental Investigation of Program Voltage (20 V) Generation With Boost Converter for 3-D-Stacked NAND Flash SSD

IEEE transactions on components, packaging, and manufacturing technology (2011), 2015-02, Vol.5 (2), p.188-193

2015

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Through-Silicon-Via Design with Clustering Structure and Adaptive Through-Silicon-Via Control for Three-Dimentional Solid-State-Drive Boost Converter System

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2), p.02BE02-02BE02-8

2012

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Through-Silicon-Via Design with Clustering Structure and Adaptive Through-Silicon-Via Control for Three-Dimentional Solid-State-Drive Boost Converter System

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2S), p.2

2012

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VSET/RESET and VPGM generator without boosting dead time for 3D-ReRAM and NAND flash hybrid solid-state drives

2012 IEEE Asian Solid State Circuits Conference (A-SSCC), 2012, p.309-312

2012

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Ferroelectric (Fe)-NAND Flash Memory With Batch Write Algorithm and Smart Data Store to the Nonvolatile Page Buffer for Data Center Application High-Speed and Highly Reliable Enterprise Solid-State Drives

IEEE journal of solid-state circuits, 2010-10, Vol.45 (10), p.2156-2164

2010

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Highly reliable, high speed and low power NAND flash memory-based Solid State Drives (SSDs)

IEICE Electronics Express, 2012-01, Vol.9 (8), p.779-794

2012

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A 1.0 V power supply, 9.3 GB/s write speed, Single-Cell Self-Boost program scheme for high performance ferroelectric NAND flash SSD

Solid-state electronics, 2011-04, Vol.58 (1), p.34-41

2011

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A Negative Word-Line Voltage Negatively-Incremental Erase Pulse Scheme with ΔV TH = 1/6ΔV ERASE for Enterprise Solid-State Drive Application Ferroelectric-NAND Flash Memories

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4S), p.4

2010

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A 1.0V power supply, 9.3GB/s write speed, Single-Cell Self-Boost program scheme for high performance ferroelectric NAND flash SSD

Solid-state electronics, 2011-04, Vol.58 (1), p.34-41

2011

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A 1.0 V power supply, 9.3 GB/s write speed, Single-Cell Self-Boost program scheme for high performance ferroelectric NAND flash SSD: Special Issue Devoted to the 2nd International Memory Workshop (IMW 2010)

Solid-state electronics, 2011, Vol.58 (1), p.34-41

2011

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A Negative Word-Line Voltage Negatively-Incremental Erase Pulse Scheme with $\Delta V_{\text{TH}} = 1/6\Delta V_{\text{ERASE}}$ for Enterprise Solid-State Drive Application Ferroelectric-NAND Flash Memories

Jpn J Appl Phys, 2010-04, Vol.49 (4), p.04DD08-04DD08-5

2010

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A 0.5-V Six-Transistor Static Random Access Memory with Ferroelectric-Gate Field Effect Transistors

Japanese Journal of Applied Physics, 2010-12, Vol.49 (12), p.121501-121501-8

2010

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Through-Silicon Via Design for a 3-D Solid-State Drive System With Boost Converter in a Package

IEEE transactions on components, packaging, and manufacturing technology (2011), 2011-02, Vol.1 (2), p.269-277

2011

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A 1.2 V Power Supply, 2.43 Times Power Efficient, Adaptive Charge Pump Circuit with Optimized Threshold Voltage at Each Pump Stage for Ferroelectric-NAND Flash Memories

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.04DD10-04DD10-5

2010

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Through-Silicon Via Design for a 3-D Solid-State Drive System with Boost Converter in a Package : THROUGH SILICON VIAS

IEEE transactions on components, packaging, and manufacturing technology (2011), 2011, Vol.1 (1-2), p.268-276

2011

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A Ferroelectric NAND Flash Memory for Low-power and Highly Reliable Enterprise SSDs and a Ferroelectric 6T-SRAM for 0.5V Low-power CPU and SoC

MRS proceedings, 2010, Vol.1250 (1), Article 1250-G13-06

2010

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A zero VTH memory cell ferroelectric-NAND flash memory with 32% read disturb, 24% program disturb, 10% data retention improvement for enterprise SSD

2009 Proceedings of the European Solid State Device Research Conference, 2009, p.225-228

2009

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A 1.0V power supply, 9.5GByte/sec write speed, Single-Cell Self-Boost program scheme for Ferroelectric NAND Flash SSD

2010 IEEE International Memory Workshop, 2010, p.1-4

2010

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Ferroelectric(Fe)-NAND flash memory with non-volatile page buffer for data center application enterprise Solid-State Drives (SSD)

2009 Symposium on VLSI Circuits, 2009, p.78-79

2009

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A 3D-Integration method to compensate output voltage degradation of boost converter for compact Solid-State-Drives

2011 IEEE International 3D Systems Integration Conference (3DIC), 2011 IEEE International, 2012, p.1-4

2012

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A 60% higher write speed, 4.2gbps, 24-channel 3D-Solid State Drive (SSD) with NAND flash channel number detector and intelligent program-voltage booster

2010 Symposium on VLSI Circuits, 2010, p.233-234

2010

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Improvement of Read Disturb, Program Disturb and Data Retention by Memory Cell VTH Optimization of Ferroelectric (Fe)-NAND Flash Memories for Highly Reliable and Low Power Enterprise Solid-State Drives (SSDs)

One by one single-electron transport in nanomechanical Coulomb blockade shuttle

Initialize and Weak-Program Erasing Scheme for High-Performance and High-Reliability Ferroelectric NAND Flash Solid-State Drive

NAND Controller System With Channel Number Detection and Feedback for Power-Efficient High-Speed 3D-SSD

Experimental Investigation of Program Voltage (20 V) Generation With Boost Converter for 3-D-Stacked NAND Flash SSD

Through-Silicon-Via Design with Clustering Structure and Adaptive Through-Silicon-Via Control for Three-Dimentional Solid-State-Drive Boost Converter System

Through-Silicon-Via Design with Clustering Structure and Adaptive Through-Silicon-Via Control for Three-Dimentional Solid-State-Drive Boost Converter System

VSET/RESET and VPGM generator without boosting dead time for 3D-ReRAM and NAND flash hybrid solid-state drives

Ferroelectric (Fe)-NAND Flash Memory With Batch Write Algorithm and Smart Data Store to the Nonvolatile Page Buffer for Data Center Application High-Speed and Highly Reliable Enterprise Solid-State Drives

Highly reliable, high speed and low power NAND flash memory-based Solid State Drives (SSDs)

A 1.0 V power supply, 9.3 GB/s write speed, Single-Cell Self-Boost program scheme for high performance ferroelectric NAND flash SSD

A Negative Word-Line Voltage Negatively-Incremental Erase Pulse Scheme with ΔV TH = 1/6ΔV ERASE for Enterprise Solid-State Drive Application Ferroelectric-NAND Flash Memories

A 1.0V power supply, 9.3GB/s write speed, Single-Cell Self-Boost program scheme for high performance ferroelectric NAND flash SSD

A 1.0 V power supply, 9.3 GB/s write speed, Single-Cell Self-Boost program scheme for high performance ferroelectric NAND flash SSD: Special Issue Devoted to the 2nd International Memory Workshop (IMW 2010)

A Negative Word-Line Voltage Negatively-Incremental Erase Pulse Scheme with $\Delta V_{\text{TH}} = 1/6\Delta V_{\text{ERASE}}$ for Enterprise Solid-State Drive Application Ferroelectric-NAND Flash Memories

A 0.5-V Six-Transistor Static Random Access Memory with Ferroelectric-Gate Field Effect Transistors

Through-Silicon Via Design for a 3-D Solid-State Drive System With Boost Converter in a Package

A 1.2 V Power Supply, 2.43 Times Power Efficient, Adaptive Charge Pump Circuit with Optimized Threshold Voltage at Each Pump Stage for Ferroelectric-NAND Flash Memories

Through-Silicon Via Design for a 3-D Solid-State Drive System with Boost Converter in a Package : THROUGH SILICON VIAS

A Ferroelectric NAND Flash Memory for Low-power and Highly Reliable Enterprise SSDs and a Ferroelectric 6T-SRAM for 0.5V Low-power CPU and SoC

A zero VTH memory cell ferroelectric-NAND flash memory with 32% read disturb, 24% program disturb, 10% data retention improvement for enterprise SSD

A 1.0V power supply, 9.5GByte/sec write speed, Single-Cell Self-Boost program scheme for Ferroelectric NAND Flash SSD

Ferroelectric(Fe)-NAND flash memory with non-volatile page buffer for data center application enterprise Solid-State Drives (SSD)

A 3D-Integration method to compensate output voltage degradation of boost converter for compact Solid-State-Drives

A 60% higher write speed, 4.2gbps, 24-channel 3D-Solid State Drive (SSD) with NAND flash channel number detector and intelligent program-voltage booster

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