UB Paderborn / Katalog / Suche / in CDI

Tactile displays: Overview and recent advances

Displays, 2008-07, Vol.29 (3), p.185-194

2008

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Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors

Journal of applied physics, 2013-11, Vol.114 (18)

2013

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Optimizing the design of a tactile display based on a capacitive micromachined ultrasonic transducer array

International journal of numerical modelling, 2013-09, Vol.26 (5), p.448-456

2013

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Leakage current mechanism in sub-micron polysilicon thin-film transistors

IEEE transactions on electron devices, 1996-08, Vol.43 (8), p.1218-1223

1996

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IEEE_Xplore

Raman spectroscopy of amorphous and microcrystalline silicon films deposited by low-pressure chemical vapor deposition

Journal of applied physics, 1995-12, Vol.78 (12), p.6999-7006

1995

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Polysilicon TFT technology for active matrix OLED displays

IEEE transactions on electron devices, 2001-05, Vol.48 (5), p.845-851

2001

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IEEE_Xplore

Crystallization of amorphous silicon thin films: comparison between experimental and computer simulation results

Journal of materials science, 2008-06, Vol.43 (11), p.3976-3981

2008

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Towards a palladium micro-membrane for the water gas shift reaction: microfabrication approach and hydrogen purification results

Journal of microelectromechanical systems, 2003-02, Vol.12 (1), p.93-100

2003

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IEEE_Xplore

Luminescence of Intraporous Cerium(III) Complexes in Alkyl Sulfonic Mesoporous Silica

Chemistry of materials, 2008-02, Vol.20 (4), p.1359-1366

2008

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Electronic structure of CeF3 and TbF3 by valence-band XPS and theory

The Journal of physics and chemistry of solids, 2009-09, Vol.70 (9), p.1302-1311

2009

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Silicidation reactions with Co–Ni bilayers for low thermal budget microelectronic applications

Thin solid films, 1999-06, Vol.347 (1), p.278-283

1999

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Polysilicon thin-film transistors using self-aligned cobalt and nickel silicide source and drain contacts

IEEE electron device letters, 1999-07, Vol.20 (7), p.332-334

1999

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IEEE_Xplore

Elimination of hillock formation in Al interconnects using Ni or Co

Journal of applied physics, 1999-07, Vol.86 (1), p.625-633

1999

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The effect of drain offset on current-voltage characteristics in sub micron polysilicon thin-film transistors

IEEE transactions on electron devices, 1996-08, Vol.43 (8), p.1306-1308

1996

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IEEE_Xplore

Poly-Si thin-film transistors on steel substrates

IEEE electron device letters, 2000-02, Vol.21 (2), p.70-72

2000

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IEEE_Xplore

Preparation and stability of low temperature cobalt and nickel silicides on thin polysilicon films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2000-01, Vol.18 (1), p.87-93

2000

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Characterization of cobalt annealed on silicon-germanium epilayers

Thin solid films, 1994-10, Vol.250 (1), p.20-25

1994

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Origin of Low-Frequency Noise in the Low Drain Current Range of Bottom-Gate Amorphous IGZO Thin-Film Transistors

IEEE electron device letters, 2011-07, Vol.32 (7), p.898-900

2011

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IEEE_Xplore

Voltage Noise Characteristics of Polysilicon P-I-N Diodes

IEEE transactions on electron devices, 2011-04, Vol.58 (4), p.1054-1062

2011

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IEEE_Xplore

Water Gas Shift Reaction in a glass microreactor

Catalysis today, 2007-01, Vol.120 (1), p.107-120

2007

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High-performance thin-film transistors in large grain size polysilicon deposited by thermal decomposition of disilane

IEEE transactions on electron devices, 1996-09, Vol.43 (9), p.1399-1406

1996

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IEEE_Xplore

Thin film transistors in low temperature as-deposited and reduced-crystallization-time polysilicon on 665°C strain point glass substrates

Thin solid films, 1999, Vol.338 (1), p.281-285

1999

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Interfacial oxide, grain size, and hydrogen passivation effects on polysilicon emitter transistors

IEEE transactions on electron devices, 1988-08, Vol.35 (8), p.1334-1343

1988

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IEEE_Xplore

Low-temperature polycrystalline silicon thin-film transistors for displays

IEEE transactions on electron devices, 1988-11, Vol.35 (11), p.1842-1845

1988

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IEEE_Xplore

High-performance thin-film transistors in low-temperature crystallized LPCVD amorphous silicon films

IEEE electron device letters, 1987-08, Vol.8 (8), p.361-364

1987

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IEEE_Xplore

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Tactile displays: Overview and recent advances

Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors

Optimizing the design of a tactile display based on a capacitive micromachined ultrasonic transducer array

Leakage current mechanism in sub-micron polysilicon thin-film transistors

Raman spectroscopy of amorphous and microcrystalline silicon films deposited by low-pressure chemical vapor deposition

Polysilicon TFT technology for active matrix OLED displays

Crystallization of amorphous silicon thin films: comparison between experimental and computer simulation results

Towards a palladium micro-membrane for the water gas shift reaction: microfabrication approach and hydrogen purification results

Luminescence of Intraporous Cerium(III) Complexes in Alkyl Sulfonic Mesoporous Silica

Electronic structure of CeF3 and TbF3 by valence-band XPS and theory

Silicidation reactions with Co–Ni bilayers for low thermal budget microelectronic applications

Polysilicon thin-film transistors using self-aligned cobalt and nickel silicide source and drain contacts

Elimination of hillock formation in Al interconnects using Ni or Co

The effect of drain offset on current-voltage characteristics in sub micron polysilicon thin-film transistors

Poly-Si thin-film transistors on steel substrates

Preparation and stability of low temperature cobalt and nickel silicides on thin polysilicon films

Characterization of cobalt annealed on silicon-germanium epilayers

Origin of Low-Frequency Noise in the Low Drain Current Range of Bottom-Gate Amorphous IGZO Thin-Film Transistors

Voltage Noise Characteristics of Polysilicon P-I-N Diodes

Water Gas Shift Reaction in a glass microreactor

High-performance thin-film transistors in large grain size polysilicon deposited by thermal decomposition of disilane

Thin film transistors in low temperature as-deposited and reduced-crystallization-time polysilicon on 665°C strain point glass substrates

Interfacial oxide, grain size, and hydrogen passivation effects on polysilicon emitter transistors

Low-temperature polycrystalline silicon thin-film transistors for displays

High-performance thin-film transistors in low-temperature crystallized LPCVD amorphous silicon films

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