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Interference between resonant Raman Auger decay and direct excitation manifested in orientation and alignment of KrII 4p4(1D)5p 2P3/2 ions

Journal of physics. B, Atomic, molecular, and optical physics, 2007-04, Vol.40 (7), p.1443-1450

2007

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Interference between resonant Raman Auger decay and direct excitation manifested in orientation and alignment of KrII 4p 4 ( 1 D)5p 2 P 3/2 ions

Journal of physics. B, Atomic, molecular, and optical physics, 2007-04, Vol.40 (7), p.1443-1450

2007

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RF reactive sputter deposition and characterization of transparent CuAlO 2 thin films

Physica status solidi. C, 2006-09, Vol.3 (8), p.2895-2898

2006

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RF reactive sputter deposition and characterization of transparent CuAlO2 thin films

Physica status solidi. C, 2006-09, Vol.3 (8), p.2895-2898

2006

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Reactive sputter deposition and metal-semiconductor transition of FeS films

Applied physics. A, Materials science & processing, 2006-08, Vol.84 (3), p.309-312

2006

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Lyman-α line polarization after proton impact on atomic hydrogen

Journal of physics. B, Atomic, molecular, and optical physics, 2005-11, Vol.38 (22), p.4045-4055, Article 4045

2005

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Partial wave analysis of interfering Kr 3d 9 5p resonant Raman Auger transitions based on measurements of alignment and orientation parameters within the natural line width

Journal of physics. B, Atomic, molecular, and optical physics, 2005-11, Vol.38 (22), p.4155-4170

2005

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Partial wave analysis of interfering Kr 3d95p resonant Raman Auger transitions based on measurements of alignment and orientation parameters within the natural line width

Journal of physics. B, Atomic, molecular, and optical physics, 2005-11, Vol.38 (22), p.4155-4170

2005

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Structural properties and bandgap bowing of ZnO{sub 1-x}S{sub x} thin films deposited by reactive sputtering

Applied physics letters, 2004-11, Vol.85 (21)

2004

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Structural properties and bandgap bowing of ZnO1−xSx thin films deposited by reactive sputtering

Applied physics letters, 2004-11, Vol.85 (21), p.4929-4931

2004

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On the composition dependence of ZnO1−xSx

Physica status solidi. C, 2004-03, Vol.1 (4), p.694-697

2004

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Preparation and characterization of highly (112)-oriented CuInS2 films deposited by a one-stage RF reactive sputtering process

Thin solid films, 2003-05, Vol.431-432 (1-2), p.231-236

2003

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Partial wave analysis of the Kr I 3d5/295p 3/2 → Kr II 4p4(1D)5p 2F 7/2 decay, based on orientation and alignment transfer

Journal of physics. B, Atomic, molecular, and optical physics, 2003-01, Vol.36, p.L57

2003

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Partial wave analysis of the Kr I 3d 5/2 9 5p 3/2 Kr II 4p 4 ( 1 D)5p 2 F 7/2 decay, based on orientation and alignment transfer

Journal of physics. B, Atomic, molecular, and optical physics, 2003-01, Vol.36 (2), p.L57-L61

2003

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Preparation and characterization of highly (1 1 2)-oriented CuInS 2 films deposited by a one-stage RF reactive sputtering process

Thin solid films, 2003, Vol.431, p.231-236

2003

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Partial wave analysis of the Kr I 3d95/25p3/2 → kr n 4p4(1D)5p 2F7/2 decay, based on orientation and alignment transfer

Journal of physics. B, Atomic, molecular, and optical physics, 2003, Vol.36 (2), p.L57-L61

2003

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Preparation and characterization of highly (1 1 2)-oriented CuInS2 films deposited by a one-stage RF reactive sputtering process

Thin solid films, 2003, Vol.431-32, p.231-236

2003

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Highly (112)-Oriented CuInS2 Thin Films Deposited by a One-Stage RF Reactive Sputtering Process

Japanese Journal of Applied Physics, 2002-04, Vol.41 (Part 2, No. 4B), p.L484-L486

2002

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(001)-TEXTURED Cu2S THIN FILMS DEPOSITED BY RF REACTIVE SPUTTERING

Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 7A, pp. 4630-4634. 2002, 2002, Vol.41 (7A), p.4630-4634

2002

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Characterization of RF reactively sputtered Cu–In–S thin films

Physica. B, Condensed matter, 2001-12, Vol.308, p.1074-1077

2001

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Characterization of RF reactively sputtered Cu-In-S thin films

Physica. B, Condensed matter, 2001, Vol.308-10, p.1074-1077

2001

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Angular response of electrochemically etched CR-39 to protons of 131 to 925 KeV

Radiation measurements, 1997-06, Vol.27 (3), p.457-459

1997

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Extended Energy Loss Fine Structure above Sub Valence Edges of the First-Transition Row Atoms and Germanium

Le Journal de Physique IV, 1997-04, Vol.7 (C2), p.C2-C2-574

1997

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Bond length determination for transition atoms by shallow level EELFS

Surface science, 1996-05, Vol.352, p.32-35

1996

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Bond length determination for transition atoms by shallow level EELFS

Surface science, 1996, Vol.352-54, p.32-35

1996

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Interference between resonant Raman Auger decay and direct excitation manifested in orientation and alignment of KrII 4p4(1D)5p 2P3/2 ions

Interference between resonant Raman Auger decay and direct excitation manifested in orientation and alignment of KrII 4p 4 ( 1 D)5p 2 P 3/2 ions

RF reactive sputter deposition and characterization of transparent CuAlO 2 thin films

RF reactive sputter deposition and characterization of transparent CuAlO2 thin films

Reactive sputter deposition and metal-semiconductor transition of FeS films

Lyman-α line polarization after proton impact on atomic hydrogen

Partial wave analysis of interfering Kr 3d 9 5p resonant Raman Auger transitions based on measurements of alignment and orientation parameters within the natural line width

Partial wave analysis of interfering Kr 3d95p resonant Raman Auger transitions based on measurements of alignment and orientation parameters within the natural line width

Structural properties and bandgap bowing of ZnO{sub 1-x}S{sub x} thin films deposited by reactive sputtering

Structural properties and bandgap bowing of ZnO1−xSx thin films deposited by reactive sputtering

On the composition dependence of ZnO1−xSx

Preparation and characterization of highly (112)-oriented CuInS2 films deposited by a one-stage RF reactive sputtering process

Partial wave analysis of the Kr I 3d5/295p 3/2 → Kr II 4p4(1D)5p 2F 7/2 decay, based on orientation and alignment transfer

Partial wave analysis of the Kr I 3d 5/2 9 5p 3/2 Kr II 4p 4 ( 1 D)5p 2 F 7/2 decay, based on orientation and alignment transfer

Preparation and characterization of highly (1 1 2)-oriented CuInS 2 films deposited by a one-stage RF reactive sputtering process

Partial wave analysis of the Kr I 3d95/25p3/2 → kr n 4p4(1D)5p 2F7/2 decay, based on orientation and alignment transfer

Preparation and characterization of highly (1 1 2)-oriented CuInS2 films deposited by a one-stage RF reactive sputtering process

Highly (112)-Oriented CuInS2 Thin Films Deposited by a One-Stage RF Reactive Sputtering Process

(001)-TEXTURED Cu2S THIN FILMS DEPOSITED BY RF REACTIVE SPUTTERING

Characterization of RF reactively sputtered Cu–In–S thin films

Characterization of RF reactively sputtered Cu-In-S thin films

Angular response of electrochemically etched CR-39 to protons of 131 to 925 KeV

Extended Energy Loss Fine Structure above Sub Valence Edges of the First-Transition Row Atoms and Germanium

Bond length determination for transition atoms by shallow level EELFS

Bond length determination for transition atoms by shallow level EELFS

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