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Developing silicon carbide for quantum spintronics

Applied physics letters, 2020-05, Vol.116 (19)

2020

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Stark tuning and electrical charge state control of single divacancies in silicon carbide

Applied physics letters, 2017-12, Vol.111 (26)

2017

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Isolated electron spins in silicon carbide with millisecond coherence times

Nature materials, 2015-02, Vol.14 (2), p.160-163

2015

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Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface

Physical review. X, 2017-06, Vol.7 (2), p.021046, Article 021046

2017

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Influence of Different Hydrocarbons on Chemical Vapor Deposition Growth and Surface Morphological Defects in 4H‐SiC Epitaxial Layers

Physica status solidi. B, Basic research, 2024-04, Vol.261 (4), p.n/a

2024

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Electrical and optical control of single spins integrated in scalable semiconductor devices

Science (American Association for the Advancement of Science), 2019-12, Vol.366 (6470), p.1225-1230

2019

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High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

Nature communications, 2019-04, Vol.10 (1), p.1954-1954, Article 1954

2019

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Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

Nano letters, 2019-10, Vol.19 (10), p.7173-7180

2019

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Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions

Nature communications, 2019-12, Vol.10 (1), p.5569-8, Article 5569

2019

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The Origin and Formation Mechanism of an Inclined Line‐like Defect in 4H‐SiC Epilayers

Physica status solidi. B, Basic research, 2022-04, Vol.259 (4), p.n/a

2022

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Bright single photon sources in lateral silicon carbide light emitting diodes

Applied physics letters, 2018-06, Vol.112 (23)

2018

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CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers

Journal of applied physics, 2019-01, Vol.125 (4)

2019

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Wafer Scale On-Axis Homoepitaxial Growth of 4H-SiC(0001) for High-Power Devices: Influence of Different Gas Phase Chemistries and Growth Rate Limitations

Crystal growth & design, 2019-06, Vol.19 (6), p.3288-3297

2019

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Energy levels and charge state control of the carbon antisite-vacancy defect in 4H-SiC

Applied physics letters, 2019-05, Vol.114 (21)

2019

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Ligand hyperfine interactions at silicon vacancies in 4H-SiC

Journal of physics. Condensed matter, 2019-05, Vol.31 (19), p.195501-195501

2019

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Narrow inhomogeneous distribution of spin-active emitters in silicon carbide

Applied physics letters, 2021-04, Vol.118 (14)

2021

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Identification of Bacterial Strains and Development of anmRNA-Based Vaccine to Combat Antibiotic Resistance in Staphylococcus aureus via In Vitro and In Silico Approaches

Biomedicines, 2023-03, Vol.11 (4), p.1039

2023

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Molecular Insights into the Role of Pathogenic nsSNPs in GRIN2B Gene Provoking Neurodevelopmental Disorders

Genes, 2022-07, Vol.13 (8), p.1332

2022

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Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

npj quantum information, 2020-09, Vol.6 (1), Article 80

2020

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Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

AIP advances, 2022-05, Vol.12 (5), p.055022-055022-7

2022

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Layer-number determination in graphene on SiC by reflectance mapping

Carbon (New York), 2014-10, Vol.77, p.492-500

2014

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Observations of very fast electron traps at SiC/high-κ dielectric interfaces

APL materials, 2023-11, Vol.11 (11), p.111121-111121-7

2023

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Influence of n-type doping levels on carrier lifetime in 4H-SiC epitaxial layers

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017, Vol.897, p.1-1

2017

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Designing mRNA- and Peptide-Based Vaccine Construct against Emerging Multidrug-Resistant Citrobacter freundii : A Computational-Based Subtractive Proteomics Approach

Medicina (Kaunas, Lithuania), 2022-09, Vol.58 (10), p.1356

2022

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Low Density of Near-Interface Traps at the Al2O3/4H-SiC Interface with Al2O3 Made by Low Temperature Oxidation of Al

Materials Science Forum, 2017, Vol.897, p.135-138

2017

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Developing silicon carbide for quantum spintronics

Stark tuning and electrical charge state control of single divacancies in silicon carbide

Isolated electron spins in silicon carbide with millisecond coherence times

Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface

Influence of Different Hydrocarbons on Chemical Vapor Deposition Growth and Surface Morphological Defects in 4H‐SiC Epitaxial Layers

Electrical and optical control of single spins integrated in scalable semiconductor devices

High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions

The Origin and Formation Mechanism of an Inclined Line‐like Defect in 4H‐SiC Epilayers

Bright single photon sources in lateral silicon carbide light emitting diodes

CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers

Wafer Scale On-Axis Homoepitaxial Growth of 4H-SiC(0001) for High-Power Devices: Influence of Different Gas Phase Chemistries and Growth Rate Limitations

Energy levels and charge state control of the carbon antisite-vacancy defect in 4H-SiC

Ligand hyperfine interactions at silicon vacancies in 4H-SiC

Narrow inhomogeneous distribution of spin-active emitters in silicon carbide

Identification of Bacterial Strains and Development of anmRNA-Based Vaccine to Combat Antibiotic Resistance in Staphylococcus aureus via In Vitro and In Silico Approaches

Molecular Insights into the Role of Pathogenic nsSNPs in GRIN2B Gene Provoking Neurodevelopmental Disorders

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

Layer-number determination in graphene on SiC by reflectance mapping

Observations of very fast electron traps at SiC/high-κ dielectric interfaces

Influence of n-type doping levels on carrier lifetime in 4H-SiC epitaxial layers

Designing mRNA- and Peptide-Based Vaccine Construct against Emerging Multidrug-Resistant Citrobacter freundii : A Computational-Based Subtractive Proteomics Approach

Low Density of Near-Interface Traps at the Al2O3/4H-SiC Interface with Al2O3 Made by Low Temperature Oxidation of Al

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