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Self-aligned normally-off metal-oxide-semiconductor n++GaN/InAlN/GaN high electron mobility transistors

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1086-1090

2015

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Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

Applied surface science, 2017-12, Vol.426, p.656-661

2017

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Patterning of titanium oxide surfaces using inductively coupled plasma for gas sensing

Applied surface science, 2014-09, Vol.312, p.107-111

2014

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Preparation of nickel oxide thin films for gas sensors applications

Sensors and actuators. B, Chemical, 1999-09, Vol.57 (1), p.147-152

1999

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Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor

Sensors and actuators. A. Physical., 2011-12, Vol.172 (2), p.386-391

2011

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C-V analysis of rapidly thermal annealed SF6 plasma treated AlGaN/GaN heterostructures

Applied surface science, 2010-12, Vol.257 (4), p.1254-1256

2010

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ZrO2/(Al)GaN metal–oxide–semiconductor structures: characterization and application

Semiconductor science and technology, 2004-12, Vol.19 (12), p.1364-1368

2004

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Gallium arsenide suspended microheater for MEMS sensor arrays

Microsystem technologies, 2008-04, Vol.14 (4-5), p.629-635

2008

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InN/InAlN heterostructures for new generation of fast electronics

Journal of applied physics, 2024-06, Vol.135 (24)

2024

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Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

Applied physics letters, 2017-07, Vol.111 (3)

2017

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Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

Journal of applied physics, 2014-09, Vol.116 (10)

2014

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Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

Applied physics letters, 2013-06, Vol.102 (24)

2013

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Dry etching characteristics of TiO2 thin films using inductively coupled plasma for gas sensing

Vacuum, 2014-09, Vol.107, p.20-22

2014

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InN: Breaking the limits of solid-state electronics

AIP advances, 2021-12, Vol.11 (12), p.125325-125325-5

2021

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Current conduction mechanism and electrical break-down in InN grown on GaN

Applied physics letters, 2017-06, Vol.110 (23)

2017

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Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth

Applied physics letters, 2014-01, Vol.104 (1)

2014

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Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs

Applied surface science, 2020-10, Vol.528, p.146824, Article 146824

2020

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CCl4-based reactive ion etching of semi-insulating GaAs and InP

Czechoslovak journal of physics, 2006-10, Vol.56 (S2), p.B1169-B1173

2006

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Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition

Applied surface science, 2018-12, Vol.461, p.255-259

2018

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Dry etching characteristics of TiO sub(2) thin films using inductively coupled plasma for gas sensing

Vacuum, 2014-09, Vol.107, p.20-22

2014

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Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure

Materials science in semiconductor processing, 2020-11, Vol.118, p.105203, Article 105203

2020

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Elimination of surface band bending on N-polar InN with thin GaN capping

Applied physics letters, 2015-11, Vol.107 (19)

2015

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Self-aligned normally-off metal-oxide-semiconductor n super(++)GaN/InAlN/GaN high electron mobility transistors

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1086-1090

2015

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High resolution physical analysis of ohmic contact formation at GaN-HEMT devices

Microelectronics and reliability, 2017-09, Vol.76-77, p.338-343

2017

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C-V characterization of SF sub(6) plasma treated AlGaN/GaN heterostructures

Microelectronic engineering, 2010-11, Vol.87 (11), p.2208-2210

2010

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Self-aligned normally-off metal-oxide-semiconductor n++GaN/InAlN/GaN high electron mobility transistors

Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

Patterning of titanium oxide surfaces using inductively coupled plasma for gas sensing

Preparation of nickel oxide thin films for gas sensors applications

Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor

C-V analysis of rapidly thermal annealed SF6 plasma treated AlGaN/GaN heterostructures

ZrO2/(Al)GaN metal–oxide–semiconductor structures: characterization and application

Gallium arsenide suspended microheater for MEMS sensor arrays

InN/InAlN heterostructures for new generation of fast electronics

Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

Dry etching characteristics of TiO2 thin films using inductively coupled plasma for gas sensing

InN: Breaking the limits of solid-state electronics

Current conduction mechanism and electrical break-down in InN grown on GaN

Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth

Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs

CCl4-based reactive ion etching of semi-insulating GaAs and InP

Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition

Dry etching characteristics of TiO sub(2) thin films using inductively coupled plasma for gas sensing

Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure

Elimination of surface band bending on N-polar InN with thin GaN capping

Self-aligned normally-off metal-oxide-semiconductor n super(++)GaN/InAlN/GaN high electron mobility transistors

High resolution physical analysis of ohmic contact formation at GaN-HEMT devices

C-V characterization of SF sub(6) plasma treated AlGaN/GaN heterostructures

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