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Test case specifications for coupled neutronics-thermal hydraulics calculation of Gas-cooled Fast Reactor

Journal of physics. Conference series, 2017-01, Vol.781 (1), p.12038

2017

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Sensitivity and Uncertainty Analysis of the GFR MOX Fuel Subassembly

Nuclear data sheets, 2014-04, Vol.118, p.545-547

2014

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Mössbauer spectroscopy used for testing of reactor steels

NDT & E international : independent nondestructive testing and evaluation, 2002-12, Vol.35 (8), p.511-518

2002

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Application of Mossbauer and positron annihilation spectroscopies for monitoring of WWER RPV steel degradation

International journal of nuclear energy, science and technology, 2007, Vol.3 (3), p.254

2007

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Corrosion of steam generator pipelines analysed using Mössbauer spectroscopy

Nuclear engineering and design, 2005-08, Vol.235 (17), p.1969-1976

2005

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Investigation of Reactor Steels

Materials science forum, 2001-04, Vol.363-365, p.47-51

2001

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Students education and training for Slovak NPP

International journal of nuclear knowledge management, 2005-01, Vol.1 (3), p.237

2005

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Utilisation of research and training reactors in the study programme of students at the Slovak University of Technology

International journal of nuclear knowledge management, 2004, Vol.1 (1/2), p.68

2004

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Investigation of reactor steels

Materials science forum, 2000-08, Vol.363-365, p.47-51

2000

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Angular correlation positron annihilation spectroscopy applied in investigation of neutron irradiated RPV-steels

International journal of applied electromagnetics and mechanics, 2000-01, Vol.11 (1), p.39-47

2000

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Self-aligned normally-off metal-oxide-semiconductor n++GaN/InAlN/GaN high electron mobility transistors

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1086-1090

2015

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Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

Journal of applied physics, 2014-09, Vol.116 (10)

2014

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InN/InAlN heterostructures for new generation of fast electronics

Journal of applied physics, 2024-06, Vol.135 (24)

2024

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Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

Applied physics letters, 2017-07, Vol.111 (3)

2017

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InN: Breaking the limits of solid-state electronics

AIP advances, 2021-12, Vol.11 (12), p.125325-125325-5

2021

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Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region

IEEE electron device letters, 2013-03, Vol.34 (3), p.432-434

2013

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Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

Applied physics letters, 2013-06, Vol.102 (24)

2013

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Preparation of nickel oxide thin films for gas sensors applications

Sensors and actuators. B, Chemical, 1999-09, Vol.57 (1), p.147-152

1999

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Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs

Applied surface science, 2020-10, Vol.528, p.146824, Article 146824

2020

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Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth

Applied physics letters, 2014-01, Vol.104 (1)

2014

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Growth and performance of n++ GaN cap layer for HEMTs applications

Materials science in semiconductor processing, 2025-01, Vol.185, p.108959, Article 108959

2025

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Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

Applied surface science, 2017-12, Vol.426, p.656-661

2017

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Current conduction mechanism and electrical break-down in InN grown on GaN

Applied physics letters, 2017-06, Vol.110 (23)

2017

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Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition

Applied surface science, 2018-12, Vol.461, p.255-259

2018

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Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure

Materials science in semiconductor processing, 2020-11, Vol.118, p.105203, Article 105203

2020

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Test case specifications for coupled neutronics-thermal hydraulics calculation of Gas-cooled Fast Reactor

Sensitivity and Uncertainty Analysis of the GFR MOX Fuel Subassembly

Mössbauer spectroscopy used for testing of reactor steels

Application of Mossbauer and positron annihilation spectroscopies for monitoring of WWER RPV steel degradation

Corrosion of steam generator pipelines analysed using Mössbauer spectroscopy

Investigation of Reactor Steels

Students education and training for Slovak NPP

Utilisation of research and training reactors in the study programme of students at the Slovak University of Technology

Investigation of reactor steels

Angular correlation positron annihilation spectroscopy applied in investigation of neutron irradiated RPV-steels

Self-aligned normally-off metal-oxide-semiconductor n++GaN/InAlN/GaN high electron mobility transistors

Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

InN/InAlN heterostructures for new generation of fast electronics

Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

InN: Breaking the limits of solid-state electronics

Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region

Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

Preparation of nickel oxide thin films for gas sensors applications

Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs

Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth

Growth and performance of n++ GaN cap layer for HEMTs applications

Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

Current conduction mechanism and electrical break-down in InN grown on GaN

Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition

Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure

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