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Impact of thickness on the structural properties of high tin content GeSn layers

Journal of crystal growth, 2017-09, Vol.473, p.20-27

2017

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Germanium content and strain in Si1−xGex alloys characterized by Raman spectroscopy

Journal of crystal growth, 2014-04, Vol.392, p.66-73

2014

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Impact of the growth strategy and device fabrication on the alloy homogeneity in optoelectronic grade Sn-rich GeSn

Materials science & engineering. B, Solid-state materials for advanced technology, 2021-02, Vol.264, p.114899, Article 114899

2021

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WET and Siconi® cleaning sequences for SiGe epitaxial regrowth

Materials science & engineering. B, Solid-state materials for advanced technology, 2020-12, Vol.262, p.114696, Article 114696

2020

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A benchmarking of silane, disilane and dichlorosilane for the low temperature growth of group IV layers

Thin solid films, 2012-02, Vol.520 (8), p.3185-3189

2012

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SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications

Thin solid films, 2014-04, Vol.557, p.183-187

2014

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Potentialities of disilane for the low temperature epitaxy of intrinsic and boron-doped SiGe

Thin solid films, 2014-04, Vol.557, p.19-26

2014

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Structural, electrical and optical properties of in-situ phosphorous-doped Ge layers

Journal of crystal growth, 2012-05, Vol.347 (1), p.37-44

2012

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Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(0 0 1) for microelectronics and optoelectronics purposes

Journal of crystal growth, 2005-01, Vol.274 (1), p.90-99

2005

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Impact of the H2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si

Journal of crystal growth, 2010-02, Vol.312 (4), p.532-541

2010

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Hürthle Cell Carcinoma: Single Center Analysis and Considerations for Surgical Management Based on the Recent Literature

Frontiers in endocrinology (Lausanne), 2022-06, Vol.13, p.904986-904986

2022

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GeSn growth kinetics in reduced pressure chemical vapor deposition from Ge2H6 and SnCl4

Journal of crystal growth, 2018-01, Vol.482, p.30-35

2018

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Agglomeration control during the selective epitaxial growth of Si raised sources and drains on ultra-thin silicon-on-insulator substrates

Journal of crystal growth, 2005-07, Vol.280 (3), p.530-538

2005

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Low temperature growth kinetics of high Ge content SiGe in reduced pressure-chemical vapor deposition

Journal of crystal growth, 2007-07, Vol.305 (1), p.113-121

Hartmann, J.M.

2007

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Low temperature boron and phosphorous doped SiGe for recessed and raised sources and drains

Journal of crystal growth, 2011-07, Vol.327 (1), p.68-77

2011

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Growth and structural properties of SiGe virtual substrates on Si(1 0 0), (1 1 0) and (1 1 1)

Journal of crystal growth, 2009-02, Vol.311 (4), p.1070-1079

2009

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Growth kinetics of Si and SiGe on Si(1 0 0), Si(1 1 0) and Si(1 1 1) surfaces

Journal of crystal growth, 2006-09, Vol.294 (2), p.288-295

2006

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Impact of flows, temperature and pressure on the GeSn growth kinetics with a digermane and tin tetrachloride chemistry

Materials science in semiconductor processing, 2024-01, Vol.169, p.107893, Article 107893

2024

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Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

Solid-state electronics, 2013-05, Vol.83, p.10-17

2013

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Very low temperature growth of GeSi alloys with digermane, disilane and dichlorosilane

Journal of crystal growth, 2020-09, Vol.546, p.125789, Article 125789

Hartmann, J.M.

2020

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Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains

Journal of crystal growth, 2004-03, Vol.264 (1), p.36-47

2004

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Collision-induced absorptions by pure CO2 in the infrared: New measurements in the 1150–4500 cm−1 spectral range and empirical modeling for applications

Icarus (New York, N.Y. 1962), 2024-11, Vol.422, p.116265, Article 116265

2024

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The HITRAN2020 molecular spectroscopic database

Journal of quantitative spectroscopy & radiative transfer, 2022-01, Vol.277, p.107949, Article 107949

2022

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Low temperature epitaxy of tensile-strained Si:P

Journal of crystal growth, 2022-03, Vol.582, p.126543, Article 126543

2022

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High germanium content SiGe virtual substrates grown at high temperatures

Journal of crystal growth, 2005-10, Vol.283 (3), p.346-355

2005

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Impact of thickness on the structural properties of high tin content GeSn layers

Germanium content and strain in Si1−xGex alloys characterized by Raman spectroscopy

Impact of the growth strategy and device fabrication on the alloy homogeneity in optoelectronic grade Sn-rich GeSn

WET and Siconi® cleaning sequences for SiGe epitaxial regrowth

A benchmarking of silane, disilane and dichlorosilane for the low temperature growth of group IV layers

SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications

Potentialities of disilane for the low temperature epitaxy of intrinsic and boron-doped SiGe

Structural, electrical and optical properties of in-situ phosphorous-doped Ge layers

Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(0 0 1) for microelectronics and optoelectronics purposes

Impact of the H2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si

Hürthle Cell Carcinoma: Single Center Analysis and Considerations for Surgical Management Based on the Recent Literature

GeSn growth kinetics in reduced pressure chemical vapor deposition from Ge2H6 and SnCl4

Agglomeration control during the selective epitaxial growth of Si raised sources and drains on ultra-thin silicon-on-insulator substrates

Low temperature growth kinetics of high Ge content SiGe in reduced pressure-chemical vapor deposition

Low temperature boron and phosphorous doped SiGe for recessed and raised sources and drains

Growth and structural properties of SiGe virtual substrates on Si(1 0 0), (1 1 0) and (1 1 1)

Growth kinetics of Si and SiGe on Si(1 0 0), Si(1 1 0) and Si(1 1 1) surfaces

Impact of flows, temperature and pressure on the GeSn growth kinetics with a digermane and tin tetrachloride chemistry

Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

Very low temperature growth of GeSi alloys with digermane, disilane and dichlorosilane

Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains

Collision-induced absorptions by pure CO2 in the infrared: New measurements in the 1150–4500 cm−1 spectral range and empirical modeling for applications

The HITRAN2020 molecular spectroscopic database

Low temperature epitaxy of tensile-strained Si:P

High germanium content SiGe virtual substrates grown at high temperatures

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