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Microchannel plate efficiencies for medium energy helium and carbon recoils in pulsed beam time-of-flight applications

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 1996-03, Vol.371 (3), p.563-565

1996

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Screened Rutherford backscattering cross sections for heavy ion and low energy backscattering analysis

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1993-06, Vol.79 (1), p.463-467

1993

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Stopping power measurements of 20–180 keV 1H and 4He in indium phosphide using thick target backscattering

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1987-11, Vol.28 (4), p.470-480

1987

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Ion beam heating of thin silicon membranes

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1993-06, Vol.79 (1), p.796-799

1993

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Marilyn Samuel, range researcher

Rangelands, 1984-02, Vol.6 (1), p.16-17

Hart, R.R

1984

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The application of channeling to masked ion beam lithography

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-05, Vol.56, p.789-791

1991

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Ar ion beam induced recrystallization of amorphous layers in thin Si films

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-07, Vol.59, p.427-430

1991

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Disorder dechanneling of low-energy protons and alpha particles in silicon

Radiation effects, 1970-01, Vol.6 (1), p.51-56

Hart, R. R.

1970

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Comparison of distorted wave and close-coupling results for scattering of HD by He at thermal energies

The Journal of chemical physics, 1978-08, Vol.69 (3), p.1233-1239

1978

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The detection sensitivity of heavy impurities in Si using 280 keV He 2+ and C 2+ back-scattering

Thin solid films, 1973, Vol.19 (1), p.137-144

1973

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Ion-induced migration of Cu into Si

Journal of applied physics, 1975-05, Vol.46 (5), p.1947-1951

1975

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Comparison of classical, distorted wave, and straight path methods of evaluating the integrals over the intermolecular trajectory during molecular collisions

The Journal of chemical physics, 1975-12, Vol.63 (12), p.5383-5389

1975

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Collision-induced absorption in HeNe mixture

Chemical physics letters, 1974-01, Vol.27 (4), p.589-591

1974

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LATTICE DISORDER PRODUCED IN Si BY 40-keV BORON AND ITS EFFECT ON ELECTRICAL BEHAVIOR

Applied physics letters, 1969-01, Vol.15 (7), p.206-208

1969

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CHANGES OF OPTICAL REFLECTIVITY (1.8 TO 2.2 eV) INDUCED BY 40 - keV ANTIMONY ION BOMBARDMENT OF SILICON

Applied physics letters, 1969-01, Vol.14 (7), p.225-226

1969

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The detection sensitivity of heavy impurities in Si using 280 keV He2+ and C2+ back-scattering

Thin solid films, 1973-12, Vol.19 (1), p.137-144

1973

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Effects of Al Films on Ion-Implanted Si

Applied physics letters, 1972-01, Vol.20 (2), p.73-75

1972

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Energy transfer in molecular collisions far from resonance

Chemical physics letters, 1975-09, Vol.35 (2), p.286-290

1975

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Enhanced Migration of Implanted Sb and In in Si Covered with Evaporated Al

Applied physics letters, 1972-01, Vol.20 (2), p.76-77

1972

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Disorder produced in SiC by ion bombardment

Radiation effects, 1971-06, Vol.9 (3-4), p.261-266

1971

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TA-A7 Ga implantation into Si at ultra-high dose rates

IEEE transactions on electron devices, 1979-11, Vol.26 (11), p.1834-1835

1979

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IEEE_Xplore

Channeling transmission of protons through thin silicon membranes

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1987-01, Vol.5 (1), p.228-231

1987

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An ultraspecific micromethod for the determination of d-glucose

Analytical biochemistry, 1967-01, Vol.18 (2), p.270-273

1967

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Oxygen Surface-Density Measurements Based on Characteristic X-Ray Production by 100-keV Protons

Journal of applied physics, 1968-01, Vol.39 (12), p.5538-5541

1968

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TEMPERATURE DEPENDENCE OF LATTICE DISORDER CREATED IN Si BY 40 keV Sb IONS

Applied physics letters, 1969-01, Vol.14 (1), p.7-9

1969

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Microchannel plate efficiencies for medium energy helium and carbon recoils in pulsed beam time-of-flight applications

Screened Rutherford backscattering cross sections for heavy ion and low energy backscattering analysis

Stopping power measurements of 20–180 keV 1H and 4He in indium phosphide using thick target backscattering

Ion beam heating of thin silicon membranes

Marilyn Samuel, range researcher

The application of channeling to masked ion beam lithography

Ar ion beam induced recrystallization of amorphous layers in thin Si films

Disorder dechanneling of low-energy protons and alpha particles in silicon

Comparison of distorted wave and close-coupling results for scattering of HD by He at thermal energies

The detection sensitivity of heavy impurities in Si using 280 keV He 2+ and C 2+ back-scattering

Ion-induced migration of Cu into Si

Comparison of classical, distorted wave, and straight path methods of evaluating the integrals over the intermolecular trajectory during molecular collisions

Collision-induced absorption in HeNe mixture

LATTICE DISORDER PRODUCED IN Si BY 40-keV BORON AND ITS EFFECT ON ELECTRICAL BEHAVIOR

CHANGES OF OPTICAL REFLECTIVITY (1.8 TO 2.2 eV) INDUCED BY 40 - keV ANTIMONY ION BOMBARDMENT OF SILICON

The detection sensitivity of heavy impurities in Si using 280 keV He2+ and C2+ back-scattering

Effects of Al Films on Ion-Implanted Si

Energy transfer in molecular collisions far from resonance

Enhanced Migration of Implanted Sb and In in Si Covered with Evaporated Al

Disorder produced in SiC by ion bombardment

TA-A7 Ga implantation into Si at ultra-high dose rates

Channeling transmission of protons through thin silicon membranes

An ultraspecific micromethod for the determination of d-glucose

Oxygen Surface-Density Measurements Based on Characteristic X-Ray Production by 100-keV Protons

TEMPERATURE DEPENDENCE OF LATTICE DISORDER CREATED IN Si BY 40 keV Sb IONS

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