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Pulse Compression Photoconductive Switching Using Negative Differential Mobility

IEEE transactions on electron devices, 2022-02, Vol.69 (2), p.590-596

2022

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Protecting superconducting qubits from phonon mediated decay

Applied physics letters, 2019-05, Vol.114 (20)

2019

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Hall Effect Characterization of α‐Irradiated p‐Type 4H‐SiC

physica status solidi (b), 2021-03, Vol.258 (3), p.n/a

2021

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Nanoscale Probing of Local Electrical Characteristics on MBE-Grown Bi2Te3 Surfaces under Ambient Conditions

Nano letters, 2015-07, Vol.15 (7), p.4241-4247

2015

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Identifying the Impact-Related Data Uses and Gaps for Hydrometeorological Impact Forecasts and Warnings

Weather, climate, and society, 2022-01, Vol.14 (1), p.155-176

2022

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Differences in perceived sources of uncertainty in natural hazards science advice: lessons for cross-disciplinary communication

Frontiers in communication, 2024-04, Vol.9

2024

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‘Sharing is caring’: A socio-technical analysis of the sharing and governing of hydrometeorological hazard, impact, vulnerability, and exposure data in Aotearoa New Zealand

Progress in disaster science, 2022-01, Vol.13, p.100213, Article 100213

2022

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Controlled removal of amorphous Se capping layer from a topological insulator

Applied physics letters, 2014-12, Vol.105 (24)

2014

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High Resolution STEM Study of Dy-doped Bi 2 Te 3 Thin Films

Microscopy and microanalysis, 2016-07, Vol.22 (S3), p.1516-1517

2016

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Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma

Materials research letters, 2021-02, Vol.9 (2), p.105-111

2021

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Impact of carrier wafer on etch rate, selectivity, morphology, and passivation during GaN plasma etching

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2021-09, Vol.39 (5)

2021

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ICP etching of GaN microstructures in a Cl2–Ar plasma with subnanometer-scale sidewall surface roughness

Materials science in semiconductor processing, 2022-06, Vol.144, p.106564, Article 106564

2022

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Ultradeep electron cyclotron resonance plasma etching of GaN

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2017-11, Vol.35 (6)

2017

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Nurturing partnerships to support data access for impact forecasts and warnings: Theoretical integration and synthesis

International journal of disaster risk reduction, 2024-04, Vol.105, p.104395, Article 104395

2024

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Hall Effect Characterization of α ‐Irradiated p‐Type 4H‐SiC

Physica Status Solidi B. Basic Solid State Physics, 2020-11, Vol.258 (3)

2020

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Eliciting mental models of science and risk for disaster communication: A scoping review of methodologies

International journal of disaster risk reduction, 2022-07, Vol.77, p.103084, Article 103084

2022

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Where oh where is the data?‘: Identifying data sources for hydrometeorological impact forecasts and warnings in Aotearoa New Zealand

International journal of disaster risk reduction, 2021-12, Vol.66, p.102619, Article 102619

2021

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Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors

Advanced materials interfaces, 2024-10

2024

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Nanoscale Probing of Local Electrical Characteristics on MBE-Grown Bi 2 Te 3 Surfaces under Ambient Conditions

Nano letters, 2015-07, Vol.15 (7), p.4241-4247

2015

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Crowdsourcing the Disaster Management Cycle

International journal of information systems for crisis response and management, 2016-10, Vol.8 (4), p.17-40

2016

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Characterization of Lone Pine, California, tremolite asbestos and preparation of research material

The Annals of occupational hygiene, 2015-01, Vol.59 (1), p.91-103

2015

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1.1 kV vertical p-i-n GaN-on-sapphire diodes

2018 76th Device Research Conference (DRC), 2018, p.1-2

2018

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Ultrahigh GaN:SiO 2 etch selectivity by in situ surface modification of SiO 2 in a Cl 2 -Ar plasma

Materials research letters, 2021-02, Vol.9 (2), p.105-111

2021

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Ultrahigh GaN:SiO 2 etch selectivity by in situ surface modification of SiO 2 in a Cl 2 -Ar plasma

Materials research letters, 2020-11, Vol.9 (2)

2020

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(Invited) Prospects for Magnesium Diffusion Doping of GaN

Meeting abstracts (Electrochemical Society), 2021-10, Vol.MA2021-02 (34), p.999-999

2021

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Pulse Compression Photoconductive Switching Using Negative Differential Mobility

Protecting superconducting qubits from phonon mediated decay

Hall Effect Characterization of α‐Irradiated p‐Type 4H‐SiC

Nanoscale Probing of Local Electrical Characteristics on MBE-Grown Bi2Te3 Surfaces under Ambient Conditions

Identifying the Impact-Related Data Uses and Gaps for Hydrometeorological Impact Forecasts and Warnings

Differences in perceived sources of uncertainty in natural hazards science advice: lessons for cross-disciplinary communication

‘Sharing is caring’: A socio-technical analysis of the sharing and governing of hydrometeorological hazard, impact, vulnerability, and exposure data in Aotearoa New Zealand

Controlled removal of amorphous Se capping layer from a topological insulator

High Resolution STEM Study of Dy-doped Bi 2 Te 3 Thin Films

Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma

Impact of carrier wafer on etch rate, selectivity, morphology, and passivation during GaN plasma etching

ICP etching of GaN microstructures in a Cl2–Ar plasma with subnanometer-scale sidewall surface roughness

Ultradeep electron cyclotron resonance plasma etching of GaN

Nurturing partnerships to support data access for impact forecasts and warnings: Theoretical integration and synthesis

Hall Effect Characterization of α ‐Irradiated p‐Type 4H‐SiC

Eliciting mental models of science and risk for disaster communication: A scoping review of methodologies

Where oh where is the data?‘: Identifying data sources for hydrometeorological impact forecasts and warnings in Aotearoa New Zealand

Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors

Nanoscale Probing of Local Electrical Characteristics on MBE-Grown Bi 2 Te 3 Surfaces under Ambient Conditions

Crowdsourcing the Disaster Management Cycle

Characterization of Lone Pine, California, tremolite asbestos and preparation of research material

1.1 kV vertical p-i-n GaN-on-sapphire diodes

Ultrahigh GaN:SiO 2 etch selectivity by in situ surface modification of SiO 2 in a Cl 2 -Ar plasma

Ultrahigh GaN:SiO 2 etch selectivity by in situ surface modification of SiO 2 in a Cl 2 -Ar plasma

(Invited) Prospects for Magnesium Diffusion Doping of GaN

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