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Pulse Compression Photoconductive Switching Using Negative Differential Mobility

IEEE transactions on electron devices, 2022-02, Vol.69 (2), p.590-596

2022

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Protecting superconducting qubits from phonon mediated decay

Applied physics letters, 2019-05, Vol.114 (20)

2019

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Hall Effect Characterization of α‐Irradiated p‐Type 4H‐SiC

physica status solidi (b), 2021-03, Vol.258 (3), p.n/a

2021

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Nanoscale Probing of Local Electrical Characteristics on MBE-Grown Bi2Te3 Surfaces under Ambient Conditions

Nano letters, 2015-07, Vol.15 (7), p.4241-4247

2015

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Identifying the Impact-Related Data Uses and Gaps for Hydrometeorological Impact Forecasts and Warnings

Weather, climate, and society, 2022-01, Vol.14 (1), p.155-176

2022

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Differences in perceived sources of uncertainty in natural hazards science advice: lessons for cross-disciplinary communication

Frontiers in communication, 2024-04, Vol.9

2024

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Controlled removal of amorphous Se capping layer from a topological insulator

Applied physics letters, 2014-12, Vol.105 (24)

2014

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‘Sharing is caring’: A socio-technical analysis of the sharing and governing of hydrometeorological hazard, impact, vulnerability, and exposure data in Aotearoa New Zealand

Progress in disaster science, 2022-01, Vol.13, p.100213, Article 100213

2022

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High Resolution STEM Study of Dy-doped Bi 2 Te 3 Thin Films

Microscopy and microanalysis, 2016-07, Vol.22 (S3), p.1516-1517

2016

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Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma

Materials research letters, 2021-02, Vol.9 (2), p.105-111

2021

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Impact of carrier wafer on etch rate, selectivity, morphology, and passivation during GaN plasma etching

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2021-09, Vol.39 (5)

2021

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ICP etching of GaN microstructures in a Cl2–Ar plasma with subnanometer-scale sidewall surface roughness

Materials science in semiconductor processing, 2022-06, Vol.144, p.106564, Article 106564

2022

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Ultradeep electron cyclotron resonance plasma etching of GaN

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2017-11, Vol.35 (6)

2017

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Nurturing partnerships to support data access for impact forecasts and warnings: Theoretical integration and synthesis

International journal of disaster risk reduction, 2024-04, Vol.105, p.104395, Article 104395

2024

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Hall Effect Characterization of α ‐Irradiated p‐Type 4H‐SiC

Physica Status Solidi B. Basic Solid State Physics, 2020-11, Vol.258 (3)

2020

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Where oh where is the data?‘: Identifying data sources for hydrometeorological impact forecasts and warnings in Aotearoa New Zealand

International journal of disaster risk reduction, 2021-12, Vol.66, p.102619, Article 102619

2021

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Eliciting mental models of science and risk for disaster communication: A scoping review of methodologies

International journal of disaster risk reduction, 2022-07, Vol.77, p.103084, Article 103084

2022

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Nanoscale Probing of Local Electrical Characteristics on MBE-Grown Bi 2 Te 3 Surfaces under Ambient Conditions

Nano letters, 2015-07, Vol.15 (7), p.4241-4247

2015

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Characterization of Lone Pine, California, tremolite asbestos and preparation of research material

The Annals of occupational hygiene, 2015-01, Vol.59 (1), p.91-103

2015

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1.1 kV vertical p-i-n GaN-on-sapphire diodes

2018 76th Device Research Conference (DRC), 2018, p.1-2

2018

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Ultrahigh GaN:SiO 2 etch selectivity by in situ surface modification of SiO 2 in a Cl 2 -Ar plasma

Materials research letters, 2021-02, Vol.9 (2), p.105-111

2021

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Ultrahigh GaN:SiO 2 etch selectivity by in situ surface modification of SiO 2 in a Cl 2 -Ar plasma

Materials research letters, 2020-11, Vol.9 (2)

2020

Volltextzugriff (PDF)

Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma

Materials Research Letters, 2021, Vol.9 (2), p.105-111

2021

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Graphene formation mechanisms on 4 H -SiC ( 0001 )

Physical review. B, Condensed matter and materials physics, 2009-09, Vol.80 (11), Article 115433

2009

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Mechanisms of selective delivery of xanthophylls to retinal pigment epithelial cells by human lipoproteins

Journal of lipid research, 2016-10, Vol.57 (10), p.1865-1878

2016

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Pulse Compression Photoconductive Switching Using Negative Differential Mobility

Protecting superconducting qubits from phonon mediated decay

Hall Effect Characterization of α‐Irradiated p‐Type 4H‐SiC

Nanoscale Probing of Local Electrical Characteristics on MBE-Grown Bi2Te3 Surfaces under Ambient Conditions

Identifying the Impact-Related Data Uses and Gaps for Hydrometeorological Impact Forecasts and Warnings

Differences in perceived sources of uncertainty in natural hazards science advice: lessons for cross-disciplinary communication

Controlled removal of amorphous Se capping layer from a topological insulator

‘Sharing is caring’: A socio-technical analysis of the sharing and governing of hydrometeorological hazard, impact, vulnerability, and exposure data in Aotearoa New Zealand

High Resolution STEM Study of Dy-doped Bi 2 Te 3 Thin Films

Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma

Impact of carrier wafer on etch rate, selectivity, morphology, and passivation during GaN plasma etching

ICP etching of GaN microstructures in a Cl2–Ar plasma with subnanometer-scale sidewall surface roughness

Ultradeep electron cyclotron resonance plasma etching of GaN

Nurturing partnerships to support data access for impact forecasts and warnings: Theoretical integration and synthesis

Hall Effect Characterization of α ‐Irradiated p‐Type 4H‐SiC

Where oh where is the data?‘: Identifying data sources for hydrometeorological impact forecasts and warnings in Aotearoa New Zealand

Eliciting mental models of science and risk for disaster communication: A scoping review of methodologies

Nanoscale Probing of Local Electrical Characteristics on MBE-Grown Bi 2 Te 3 Surfaces under Ambient Conditions

Characterization of Lone Pine, California, tremolite asbestos and preparation of research material

1.1 kV vertical p-i-n GaN-on-sapphire diodes

Ultrahigh GaN:SiO 2 etch selectivity by in situ surface modification of SiO 2 in a Cl 2 -Ar plasma

Ultrahigh GaN:SiO 2 etch selectivity by in situ surface modification of SiO 2 in a Cl 2 -Ar plasma

Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma

Graphene formation mechanisms on 4 H -SiC ( 0001 )

Mechanisms of selective delivery of xanthophylls to retinal pigment epithelial cells by human lipoproteins

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