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Crystal Phase Quantum Dots

Nano letters, 2010-04, Vol.10 (4), p.1198-1201

2010

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New Mode of Vapor−Liquid−Solid Nanowire Growth

Nano letters, 2011-03, Vol.11 (3), p.1247-1253

2011

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Deep-Level Structure of the Spin-Active Recombination Center in Dilute Nitrides

Physical review letters, 2024-05, Vol.132 (18), p.186402-186402, Article 186402

2024

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Silicon nanowires: Diameter dependence of growth rate and delay in growth

Applied physics letters, 2010-03, Vol.96 (13)

2010

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Piezo-generator integrating a vertical array of GaN nanowires

Nanotechnology, 2016-08, Vol.27 (32), p.325403

2016

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Influence of surface passivation on the electrical properties of p–i–n GaAsP nanowires

Applied physics letters, 2020-09, Vol.117 (12)

2020

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Self-induced growth of vertical GaN nanowires on silica

Nanotechnology, 2016-04, Vol.27 (13), p.135602-135609

2016

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Room-temperature defect-engineered spin filter based on a non-magnetic semiconductor

Nature materials, 2009-03, Vol.8 (3), p.198-202

2009

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Type II heterostructures formed by zinc-blende inclusions in InP and GaAs wurtzite nanowires

Applied physics letters, 2010-07, Vol.97 (4), p.041910-041910-3

2010

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Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth

Applied physics letters, 2005-11, Vol.87 (20)

2005

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Optical properties of GaN nanowires grown on chemical vapor deposited-graphene

Nanotechnology, 2019-05, Vol.30 (21), p.214005

2019

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Fabrication and characterization of a δ-dope InAs/InP core shell nanowire transistor

Journal of crystal growth, 2013-09, Vol.378, p.511-514

2013

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GaP/GaAs1−xPx nanowires fabricated with modulated fluxes: A step towards the realization of superlattices in a single nanowire

Journal of crystal growth, 2011-05, Vol.323 (1), p.293-296

2011

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Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires

Applied physics letters, 2011-04, Vol.98 (14), p.142114-142114-3

2011

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Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111)

Nanotechnology, 2008-04, Vol.19 (15), p.155704-155704 (5)

2008

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Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization

Nanotechnology, 2007-09, Vol.18 (38), p.385306-385306 (7)

2007

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Critical diameters and temperature domains for MBE growth of III-V nanowires on lattice mismatched substrates

Physica status solidi. PSS-RRL. Rapid research letters, 2009-05, Vol.3 (4), p.112-114

2009

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Effect of arsenic species on the kinetics of GaAs nanowires growth by molecular beam epitaxy

Journal of crystal growth, 2010-07, Vol.312 (14), p.2073-2077

2010

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Growth kinetics and crystal structure of semiconductor nanowires

Physical review. B, Condensed matter and materials physics, 2008-12, Vol.78 (23), Article 235301

2008

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Zinc blende GaAsSb nanowires grown by molecular beam epitaxy

Nanotechnology, 2008-07, Vol.19 (27), p.275605-275605 (4)

2008

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Magnetic thaw down and boil-off of electrons in the quantum Hall effect regime due to magnetoacceptors in GaAs/GaAlAs heterostructures

Physical review. B, Condensed matter and materials physics, 2012-08, Vol.86 (8), Article 085321

2012

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Growth and structural characterization of GaAs/GaAsSb axial heterostructured nanowires

Journal of crystal growth, 2009-03, Vol.311 (7), p.1847-1850

2009

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Effect of postgrowth heat treatment on the structural and optical properties of InP/InAsP/InP nanowires

Semiconductors (Woodbury, N.Y.), 2012-02, Vol.46 (2), p.175-178

2012

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Morphology and composition of highly strained InGaAs and InGaAsN layers grown on GaAs substrate

Applied physics letters, 2004-01, Vol.84 (2), p.203-205

2004

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Quantum-well saturable absorber at 1.55μm on GaAs substrate with a fast recombination rate

Applied physics letters, 2006-05, Vol.88 (20)

2006

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Crystal Phase Quantum Dots

New Mode of Vapor−Liquid−Solid Nanowire Growth

Deep-Level Structure of the Spin-Active Recombination Center in Dilute Nitrides

Silicon nanowires: Diameter dependence of growth rate and delay in growth

Piezo-generator integrating a vertical array of GaN nanowires

Influence of surface passivation on the electrical properties of p–i–n GaAsP nanowires

Self-induced growth of vertical GaN nanowires on silica

Room-temperature defect-engineered spin filter based on a non-magnetic semiconductor

Type II heterostructures formed by zinc-blende inclusions in InP and GaAs wurtzite nanowires

Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth

Optical properties of GaN nanowires grown on chemical vapor deposited-graphene

Fabrication and characterization of a δ-dope InAs/InP core shell nanowire transistor

GaP/GaAs1−xPx nanowires fabricated with modulated fluxes: A step towards the realization of superlattices in a single nanowire

Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires

Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111)

Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization

Critical diameters and temperature domains for MBE growth of III-V nanowires on lattice mismatched substrates

Effect of arsenic species on the kinetics of GaAs nanowires growth by molecular beam epitaxy

Growth kinetics and crystal structure of semiconductor nanowires

Zinc blende GaAsSb nanowires grown by molecular beam epitaxy

Magnetic thaw down and boil-off of electrons in the quantum Hall effect regime due to magnetoacceptors in GaAs/GaAlAs heterostructures

Growth and structural characterization of GaAs/GaAsSb axial heterostructured nanowires

Effect of postgrowth heat treatment on the structural and optical properties of InP/InAsP/InP nanowires

Morphology and composition of highly strained InGaAs and InGaAsN layers grown on GaAs substrate

Quantum-well saturable absorber at 1.55μm on GaAs substrate with a fast recombination rate

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