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Mating system and protandrous sex change in “Magochi” Platycephalus sp. 2 (Platycephalidae)

Ichthyological research, 2021-11, Vol.68 (4), p.541-547

2021

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Enhancement of f} to 910 GHz by Adopting Asymmetric Gate Recess and Double-Side-Doped Structure in 75-nm-Gate InAlAs/InGaAs HEMTs

IEEE transactions on electron devices, 2017-01, Vol.64 (1), p.89-95

2017

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Prolonged versus intermittent β-lactam antibiotics intravenous infusion strategy in sepsis or septic shock patients: a systematic review with meta-analysis and trial sequential analysis of randomized trials

Journal of intensive care, 2020-10, Vol.8 (1), p.77-11, Article 77

2020

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High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

IEICE transactions on electronics, 2023-11, Vol.E106.C (11), p.661-668, Article 2023MMP0005

2023

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Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier

IEICE transactions on electronics, 2023-10, Vol.E106.C (10), p.605-613, Article 2022ECP5046

2023

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High Output Power and Efficiency 300-GHz Band InP Based MOS-HEMT Power Amplifiers With Composite-Channel and Double Side Doping

IEEE journal of the Electron Devices Society, 2024-01, Vol.12, p.1-1

2024

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Thermal Design of GaN-on-GaN HEMT Power Amplifier for a Selective Heating Microwave Oven

IEEE transactions on components, packaging, and manufacturing technology (2011), 2021-11, Vol.11 (11), p.1909-1916

2021

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Maximum frequency of oscillation of 1.3 THz obtained by using an extended drain-side recess structure in 75-nm-gate InAlAs/InGaAs high-electron-mobility transistors

Applied physics express, 2017-02, Vol.10 (2), p.24102

2017

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High performance and high reliability AlGaN/GaN HEMTs

Physica status solidi. A, Applications and materials science, 2009-06, Vol.206 (6), p.1135-1144

2009

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Isolation of multidrug-resistant Haemophilus influenzae harbouring multiple exogenous genes from a patient diagnosed with acute sinusitis

Journal of infection and chemotherapy : official journal of the Japan Society of Chemotherapy, 2019-05, Vol.25 (5), p.385-387

2019

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Direct conversion of rice straw catalyzed by solid acid supported-Pt catalyst using in situ H2 by ethanol steam reforming

Fuel (Guildford), 2014, Vol.116, p.34-38

2014

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Improvement of RF and Noise Characteristics Using a Cavity Structure in InAlAs/InGaAs HEMTs

IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2136-2141

2012

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Intensification of North Pacific intermediate water ventilation during the Younger Dryas

Geo-marine letters, 2016-10, Vol.36 (5), p.353-360

2016

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Usefulness of a Skin Graft Obtained from the Bilateral Nasolabial Folds for a Skin Defect following Resection of a Malignant Tumor at the Nasal Tip

Plastic and reconstructive surgery. Global open, 2021-03, Vol.9 (3), p.e3481

2021

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Suppressing the 1/f noise and noise figure of InP-based high electron mobility transistors

Japanese Journal of Applied Physics, 2014-04, Vol.53 (4), p.41201-1-041201-5

2014

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Metastable ferromagnetic clusters in dissipative many-body systems of polar molecules

Physical review. A, 2023-07, Vol.108 (1), Article 013306

2023

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Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers

IEICE transactions on electronics, 2017-01, Vol.E100.C (5), p.417-423

2017

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Lattice-Matched p-GaAsSb/n-InP Backward Diodes Operating at Zero Bias for Millimeter-Wave Applications

Applied physics express, 2012-09, Vol.5 (9), p.94201

2012

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300-GHz Amplifier in 75-nm InP HEMT Technology

IEICE transactions on electronics, 2016, Vol.E99.C (5), p.528-534

2016

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Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs

IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3073-3078

2022

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Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis

IEICE transactions on electronics, 2015, Vol.E98.C (12), p.1112-1119

2015

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FOREWORD

IEICE transactions on electronics, 2015, Vol.E98.C (5), p.381-381

HARA, Naoki

2015

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Improved f T /f max in wide bias range by steam-annealed ultrathin-Al 2 O 3 gate dielectrics for InP-based high-electron-mobility transistors

Applied physics express, 2022-04, Vol.15 (4), p.41001

2022

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Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- k Gate Dielectrics

IEEE electron device letters, 2010-03, Vol.31 (3), p.189-191

2010

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Emergence of Quinolone Low-Susceptible Haemophilus influenzae Harboring the Mutated Quinolone Targeting Gene of Haemophilus haemolyticus

Microbial drug resistance (Larchmont, N.Y.), 2024-08, Vol.30 (8), p.350-352

2024

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Mating system and protandrous sex change in “Magochi” Platycephalus sp. 2 (Platycephalidae)

Enhancement of f} to 910 GHz by Adopting Asymmetric Gate Recess and Double-Side-Doped Structure in 75-nm-Gate InAlAs/InGaAs HEMTs

Prolonged versus intermittent β-lactam antibiotics intravenous infusion strategy in sepsis or septic shock patients: a systematic review with meta-analysis and trial sequential analysis of randomized trials

High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier

High Output Power and Efficiency 300-GHz Band InP Based MOS-HEMT Power Amplifiers With Composite-Channel and Double Side Doping

Thermal Design of GaN-on-GaN HEMT Power Amplifier for a Selective Heating Microwave Oven

Maximum frequency of oscillation of 1.3 THz obtained by using an extended drain-side recess structure in 75-nm-gate InAlAs/InGaAs high-electron-mobility transistors

High performance and high reliability AlGaN/GaN HEMTs

Isolation of multidrug-resistant Haemophilus influenzae harbouring multiple exogenous genes from a patient diagnosed with acute sinusitis

Direct conversion of rice straw catalyzed by solid acid supported-Pt catalyst using in situ H2 by ethanol steam reforming

Improvement of RF and Noise Characteristics Using a Cavity Structure in InAlAs/InGaAs HEMTs

Intensification of North Pacific intermediate water ventilation during the Younger Dryas

Usefulness of a Skin Graft Obtained from the Bilateral Nasolabial Folds for a Skin Defect following Resection of a Malignant Tumor at the Nasal Tip

Suppressing the 1/f noise and noise figure of InP-based high electron mobility transistors

Metastable ferromagnetic clusters in dissipative many-body systems of polar molecules

Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers

Lattice-Matched p-GaAsSb/n-InP Backward Diodes Operating at Zero Bias for Millimeter-Wave Applications

300-GHz Amplifier in 75-nm InP HEMT Technology

Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs

Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis

FOREWORD

Improved f T /f max in wide bias range by steam-annealed ultrathin-Al 2 O 3 gate dielectrics for InP-based high-electron-mobility transistors

Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- k Gate Dielectrics

Emergence of Quinolone Low-Susceptible Haemophilus influenzae Harboring the Mutated Quinolone Targeting Gene of Haemophilus haemolyticus

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