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Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications

Advanced materials (Weinheim), 2020-04, Vol.32 (15), p.e1903407-n/a

2020

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Integrated Gallium Nitride Nonlinear Photonics

Laser & photonics reviews, 2022-01, Vol.16 (1), p.n/a

2022

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Abnormal Stranski–Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices

ACS applied materials & interfaces, 2019-01, Vol.11 (1), p.1228-1238

2019

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Study on efficiency droop in InGaN/GaN light-emitting diodes based on differential carrier lifetime analysis

Applied physics letters, 2016-01, Vol.108 (1)

2016

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Generation of multiple near-visible comb lines in an AlN microring via χ(2) and χ(3) optical nonlinearities

Applied physics letters, 2018-10, Vol.113 (17)

2018

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A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure

Applied physics letters, 2016-12, Vol.109 (24)

2016

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Gain-Coupled 4×56 Gb/s EML Array with Optimized Bonding-Wire Inductance

IEEE journal of selected topics in quantum electronics, 2022-01, Vol.28 (1: Semiconductor Lasers), p.1-7

2022

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An InP-based vortex beam emitter with monolithically integrated laser

Nature communications, 2018-07, Vol.9 (1), p.2652-6, Article 2652

2018

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Study on improving visible light photocatalytic activity of Ag3PO4 through morphology control

Catalysis communications, 2015-01, Vol.58, p.117-121

2015

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1.3 GHz E-O bandwidth GaN-based micro-LED for multi-gigabit visible light communication

Photonics research (Washington, DC), 2021-05, Vol.9 (5), p.792

2021

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A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes

Materials, 2017-10, Vol.10 (11), p.1233

2017

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High-speed optoelectronic devices

Science China. Information sciences, 2023-05, Vol.66 (5), p.150401, Article 150401

2023

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A comparative study of photoluminescence internal quantum efficiency determination method in InGaN/GaN multi-quantum-wells

Journal of applied physics, 2017-10, Vol.122 (13)

2017

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Modulation Characteristics Enhancement of Monolithically Integrated Laser Diodes Under Mutual Injection Locking

IEEE journal of selected topics in quantum electronics, 2015-11, Vol.21 (6), p.628-635

2015

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IEEE_Xplore

A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures

Scientific reports, 2017-03, Vol.7 (1), p.45082-45082, Article 45082

2017

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Nano-crystalline thin films fabricated by Si-Al co-sputtering and metal induced crystallization for photovoltaic applications

Solar energy, 2018-10, Vol.173, p.539-550

2018

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A high-Q mid-infrared Tamm plasmon absorber using MgF2 and Ge aperiodic tandem films designed by the genetic algorithm

AIP advances, 2022-03, Vol.12 (3), p.035052-035052-5

2022

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Theoretical study on critical thicknesses of InGaN grown on (0 0 0 1) GaN

Journal of crystal growth, 2011-07, Vol.327 (1), p.202-204

2011

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Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

Materials research express, 2024-03, Vol.11 (3), p.35901

2024

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Evaluation of socio-economic-ecological environmental benefits of urban renewal projects based on the coupling coordination degree

Environmental science and pollution research international, 2023-04, Vol.30 (19), p.56946-56968

2023

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The Influence of Structure Parameter on GaN/AlN Periodically Stacked Structure Avalanche Photodiode

IEEE photonics technology letters, 2017-12, Vol.29 (24), p.2187-2190

2017

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IEEE_Xplore

Nano-fabrication and related optical properties of InGaN GaN nanopillars

Nanotechnology, 2015-02, Vol.26 (7), p.075302-075302

2015

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Oxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bonding

AIP advances, 2017-01, Vol.7 (1), p.015039-015039-5

2017

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Integrated continuous-wave aluminum nitride Raman laser

Optica, 2017-08, Vol.4 (8), p.893

2017

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V‐shaped semipolar InGaN/GaN multi‐quantum‐well light‐emitting diodes directly grown on c‐plane patterned sapphire substrates

Physica status solidi. A, Applications and materials science, 2017-08, Vol.214 (8), p.n/a

2017

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Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications

Integrated Gallium Nitride Nonlinear Photonics

Abnormal Stranski–Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices

Study on efficiency droop in InGaN/GaN light-emitting diodes based on differential carrier lifetime analysis

Generation of multiple near-visible comb lines in an AlN microring via χ(2) and χ(3) optical nonlinearities

A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure

Gain-Coupled 4×56 Gb/s EML Array with Optimized Bonding-Wire Inductance

An InP-based vortex beam emitter with monolithically integrated laser

Study on improving visible light photocatalytic activity of Ag3PO4 through morphology control

1.3 GHz E-O bandwidth GaN-based micro-LED for multi-gigabit visible light communication

A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes

High-speed optoelectronic devices

A comparative study of photoluminescence internal quantum efficiency determination method in InGaN/GaN multi-quantum-wells

Modulation Characteristics Enhancement of Monolithically Integrated Laser Diodes Under Mutual Injection Locking

A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures

Nano-crystalline thin films fabricated by Si-Al co-sputtering and metal induced crystallization for photovoltaic applications

A high-Q mid-infrared Tamm plasmon absorber using MgF2 and Ge aperiodic tandem films designed by the genetic algorithm

Theoretical study on critical thicknesses of InGaN grown on (0 0 0 1) GaN

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

Evaluation of socio-economic-ecological environmental benefits of urban renewal projects based on the coupling coordination degree

The Influence of Structure Parameter on GaN/AlN Periodically Stacked Structure Avalanche Photodiode

Nano-fabrication and related optical properties of InGaN GaN nanopillars

Oxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bonding

Integrated continuous-wave aluminum nitride Raman laser

V‐shaped semipolar InGaN/GaN multi‐quantum‐well light‐emitting diodes directly grown on c‐plane patterned sapphire substrates

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