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An integrated economic-ecological index based on satellite-derived carbon sequestration and carbon price: A case study during 2015–2020 in Shaanxi, China

Ecological indicators, 2023-09, Vol.153, p.110458, Article 110458

2023

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Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors

Applied physics letters, 2018-10, Vol.113 (15)

2018

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Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs

IEEE electron device letters, 2017-11, Vol.38 (11), p.1567-1570

2017

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Enhancement-mode n-GaN gate p-channel heterostructure field effect transistors based on GaN/AlGaN 2D hole gas

Applied physics letters, 2019-09, Vol.115 (11)

2019

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Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

Applied physics letters, 2016-10, Vol.109 (15)

2016

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Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT

IEEE transactions on electron devices, 2018-04, Vol.65 (4), p.1314-1320

2018

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Normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors using oxygen plasma treatment

Applied physics express, 2019-05, Vol.12 (5), p.51001

2019

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Monolithic integration of enhancement/depletion-mode high electron mobility transistors using hydrogen plasma treatment

Applied physics express, 2019-03, Vol.12 (3), p.36502

2019

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Fabrication of normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid

Applied physics express, 2016-08, Vol.9 (8), p.84102

2016

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Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs

AIP advances, 2018-03, Vol.8 (3), p.035213-035213-6

2018

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High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition

AIP advances, 2017-12, Vol.7 (12), p.125018-125018-7

2017

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Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

AIP advances, 2017-12, Vol.7 (12), p.125023-125023-7

2017

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Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability

Journal of semiconductors, 2017-07, Vol.38 (7), p.53-59

2017

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Phase Transformation Pathways of Titanium Nitride in Oxidation Process: Investigated by Environmental Scanning/Transmission Electron Microscopy

Microscopy and microanalysis, 2024-07, Vol.30 (Supplement_1)

2024

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Exploiting Co-C interface and graphitic carbon belts for enhanced structural stability of a porous layered Co-C catalyst for CO2 hydrogenation

Chemical engineering journal (Lausanne, Switzerland : 1996), 2024-06, Vol.490, p.151673, Article 151673

2024

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Fabrication of regular UiO-66(Ce) nanocubes and their electrochemical catalysis performance

Materials science & engineering. B, Solid-state materials for advanced technology, 2025-01, Vol.311, p.117800, Article 117800

2025

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MIL-53(Fe)-based catalysts: CO2 hydrogenation performance and three-dimensional structures

Materials science & engineering. B, Solid-state materials for advanced technology, 2024-12, Vol.310, p.117767, Article 117767

2024

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Insights into size-dependent oxidation pathways in TiN: Atomic phase transformation and structural failure

Applied surface science, 2023-05, Vol.620, p.156797, Article 156797

2023

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Unraveling the atomic structure evolution of titanium nitride upon oxidation

Corrosion science, 2024-11, Vol.240, p.112465, Article 112465

2024

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Narrowing Working Voltage Window to Improve Layered GeP Anode Cycling Performance for Lithium-Ion Batteries

ACS applied materials & interfaces, 2020-04, Vol.12 (15), p.17466-17473

2020

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Electronic interactions between neighboring functionalized guest Sb single atoms and Pt clusters enhance CO tolerance

Journal of energy chemistry, 2025-02, Vol.101, p.733-743

2025

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Degradation of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors under off-state electrical stress

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2018-07, Vol.36 (4)

2018

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Mechanical Robustness Two-Dimensional Silicon Phosphide Flake Anodes for Lithium Ion Batteries

ACS sustainable chemistry & engineering, 2020-11, Vol.8 (47), p.17597-17605

2020

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Enhancement mode AlGaN/GaN HEMTs by fluorine ion thermal diffusion with high V th stability

Applied physics express, 2019-06, Vol.12 (6), p.66501

2019

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Architecture Design and Catalytic Activity: Non‐Noble Bimetallic CoFe/fe3O4 Core–Shell Structures for CO2 Hydrogenation

Advanced science, 2023-02, Vol.10 (5), p.n/a

2023

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An integrated economic-ecological index based on satellite-derived carbon sequestration and carbon price: A case study during 2015–2020 in Shaanxi, China

Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors

Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs

Enhancement-mode n-GaN gate p-channel heterostructure field effect transistors based on GaN/AlGaN 2D hole gas

Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT

Normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors using oxygen plasma treatment

Monolithic integration of enhancement/depletion-mode high electron mobility transistors using hydrogen plasma treatment

Fabrication of normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid

Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs

High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition

Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability

Phase Transformation Pathways of Titanium Nitride in Oxidation Process: Investigated by Environmental Scanning/Transmission Electron Microscopy

Exploiting Co-C interface and graphitic carbon belts for enhanced structural stability of a porous layered Co-C catalyst for CO2 hydrogenation

Fabrication of regular UiO-66(Ce) nanocubes and their electrochemical catalysis performance

MIL-53(Fe)-based catalysts: CO2 hydrogenation performance and three-dimensional structures

Insights into size-dependent oxidation pathways in TiN: Atomic phase transformation and structural failure

Unraveling the atomic structure evolution of titanium nitride upon oxidation

Narrowing Working Voltage Window to Improve Layered GeP Anode Cycling Performance for Lithium-Ion Batteries

Electronic interactions between neighboring functionalized guest Sb single atoms and Pt clusters enhance CO tolerance

Degradation of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors under off-state electrical stress

Mechanical Robustness Two-Dimensional Silicon Phosphide Flake Anodes for Lithium Ion Batteries

Enhancement mode AlGaN/GaN HEMTs by fluorine ion thermal diffusion with high V th stability

Architecture Design and Catalytic Activity: Non‐Noble Bimetallic CoFe/fe3O4 Core–Shell Structures for CO2 Hydrogenation

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