UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Influence of Heterointerface Abruptness on Electrorefractive Effect in InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.04DG04-04DG04-4

2010

Volltextzugriff (PDF)

Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2005-01, Vol.44 (7L), p.L1019

2005

Volltextzugriff (PDF)

ELECTRON CYCLOTRON RESONANCE-REACTIVE ION BEAM ETCHING OF InP BY CYCLIC INJECTION OF CH4/H2/Ar AND O2

Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 1, pp. 15-19. 2002, 2002-01, Vol.41 (1), p.15-19

2002

Volltextzugriff (PDF)

Observation of Giant Electrorefractive Effect in Five-Layer Asymmetric Coupled Quantum Wells (FACQWs)

Japanese Journal of Applied Physics, 2004-12, Vol.43 (No. 12A), p.L1540-L1542

2004

Volltextzugriff (PDF)

Fabrication and Optical Characterization of Five-Layer Asymmetric Coupled Quantum Well (FACQW)

Japanese Journal of Applied Physics, 2002-04, Vol.41 (Part 1, No. 4B), p.2701-2706

2002

Volltextzugriff (PDF)

Silicon Dioxide Film with Low Dielectric Constants using Liquid-Phase Deposition

Japanese Journal of Applied Physics, 1999, Vol.38 (10R), p.5715-5719

1999

Volltextzugriff (PDF)

Preparation of Amorphous Fluorinated Carbon Film Using Low Global-Warming Potential Gas, C 4 F 6 , by Plasma Enhanced Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2006-02, Vol.45 (2L), p.L151

2006

Volltextzugriff (PDF)

Modified five-layer asymmetric coupled quantum well (M-FACQW) for giant negative refractive index change

Physica. E, Low-dimensional systems & nanostructures, 2005-09, Vol.28 (4), p.507-513

2005

Volltextzugriff (PDF)

The Improvement of the Characteristics of Liquid Phase-Deposited SiliconDioxide/Silicon Interface

Denki Gakkai ronbunshi. C, Erekutoronikusu, joho kogaku, shisutemu, 2003-10, Vol.123 (10), p.1695

2003

Volltextzugriff (PDF)

Improved Etched Surface Morphology in Electron Cyclotron Resonance-Reactive Ion Etching of GaN by Cyclic Injection of CH 4 /H 2 /Ar and O 2 with Constant Ar Flow

Japanese Journal of Applied Physics, 2005-07, Vol.44 (7S), p.5819

2005

Volltextzugriff (PDF)

The Improvement of the Characteristics of Liquid Phase-Deposited Silicon Dioxide/Silicon Interface

IEEJ Transactions on Electronics, Information and Systems, 2003, Vol.123(10), pp.1695-1699

2003

Volltextzugriff (PDF)

Electron Cyclotron Resonance-Reactive Ion Beam Etching of InP by Cyclic Injection of CH 4 /H 2 /Ar and O 2

Japanese Journal of Applied Physics, 2002-01, Vol.41 (Part 1, No. 1), p.15-19

2002

Volltextzugriff (PDF)

Electronic state of metalloporphyrins

Japanese Journal of Applied Physics, 1988, Vol.27 (1), p.109-116

1988

Volltextzugriff (PDF)

Electron Cyclotron Resonance-Reactive Ion Etching of III-V Semiconductors by Cyclic Injection of CH 4 /H 2 /Ar and O 2 with Constant Ar Flow

Japanese Journal of Applied Physics, 2003-06, Vol.42 (Part 1, No. 6B), p.3958-3961

2003

Volltextzugriff (PDF)

ELECTRON CYCLOTRON RESONANCE-REACTIVE ION ETCHING OF III-V SEMICONDUCTORS BY CYCLIC INJECTION OF CH4/H2/Ar AND O2 WITH CONSTANT Ar FLOW

Japanese Journal of Applied Physics, Part 1, 2003-01, Vol.42 (6B), p.3958-3961

2003

Volltextzugriff (PDF)

Microcomputer-based avalanche injection system and determination of distributed area density of traps in SiO2 film

Electronics & communications in Japan. Part 1, Communications, 1984, Vol.67 (2), p.80-87

1984

Volltextzugriff (PDF)

Enhanced Thermal Oxidation of Silicon by Oxygen Jet

Denki Kagaku oyobi Kogyo Butsuri Kagaku, 1995-06, Vol.63 (6), p.460-465

1995

Volltextzugriff (PDF)

Possible observation of P b 0 and P b 1 centers at irradiated (100)Si/SiO2 interface from electrical measurements

Applied physics letters, 1991-12, Vol.59 (26), p.3416-3418

1991

Volltextzugriff (PDF)

Synthesis of (Ba,Sr)TiO 3 Thin Films by Plasma-Activated Pulsed Laser Deposition Technique

Japanese Journal of Applied Physics, 1999-05, Vol.38 (5R), p.2869

1999

Volltextzugriff (PDF)

液相堆積シリコン酸化膜／シリコン界面特性の改善

電気学会論文誌Ｃ（電子・情報・システム部門誌）, 2003, Vol.123(10), pp.1695-1699

2003

Volltextzugriff (PDF)

Proposal of Ge/SiGe five-layer asymmetric coupled quantum well for mach-zehnder modulators

2009 IEEE LEOS Annual Meeting Conference Proceedings, 2009, p.307-308

2009

Volltextzugriff (PDF)

Considerations on the Semiconductor-Thermo-Electric-Energy-Conversion Systems Operated under Low Temperature-Difference

IEEJ Transactions on Electronics, Information and Systems, 1990/01/20, Vol.110(1), pp.29-35

1990

Volltextzugriff (PDF)

Considerations on the Transient Thermal Impedance of Semiconductor valves

IEEJ Transactions on Electronics, Information and Systems, 1989/07/20, Vol.109(7), pp.515-522

1989

Volltextzugriff (PDF)

Anomalous Effect in La 2-x Sr x CuO 4 of Doping Level x= 1/4 n

Japanese Journal of Applied Physics, 1996-02, Vol.35 (2S), p.1221

1996

Volltextzugriff (PDF)

Semiconductor thermoelectric-energy conversion systems working at low temperature differences

Electrical engineering in Japan, 1991, Vol.111 (4), p.99-107

1991

Volltextzugriff (PDF)

1 – 25 von 28

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(21)
Mit Volltextzugriff
(26)

Publikationsform

Artikel
(27)
Tagungsberichte
(1)

Sprache

Englisch
(27)
Japanisch
(11)

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

Influence of Heterointerface Abruptness on Electrorefractive Effect in InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well

Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by Metalorganic Chemical Vapor Deposition

ELECTRON CYCLOTRON RESONANCE-REACTIVE ION BEAM ETCHING OF InP BY CYCLIC INJECTION OF CH4/H2/Ar AND O2

Observation of Giant Electrorefractive Effect in Five-Layer Asymmetric Coupled Quantum Wells (FACQWs)

Fabrication and Optical Characterization of Five-Layer Asymmetric Coupled Quantum Well (FACQW)

Silicon Dioxide Film with Low Dielectric Constants using Liquid-Phase Deposition

Preparation of Amorphous Fluorinated Carbon Film Using Low Global-Warming Potential Gas, C 4 F 6 , by Plasma Enhanced Chemical Vapor Deposition

Modified five-layer asymmetric coupled quantum well (M-FACQW) for giant negative refractive index change

The Improvement of the Characteristics of Liquid Phase-Deposited SiliconDioxide/Silicon Interface

Improved Etched Surface Morphology in Electron Cyclotron Resonance-Reactive Ion Etching of GaN by Cyclic Injection of CH 4 /H 2 /Ar and O 2 with Constant Ar Flow

The Improvement of the Characteristics of Liquid Phase-Deposited Silicon Dioxide/Silicon Interface

Electron Cyclotron Resonance-Reactive Ion Beam Etching of InP by Cyclic Injection of CH 4 /H 2 /Ar and O 2

Electronic state of metalloporphyrins

Electron Cyclotron Resonance-Reactive Ion Etching of III-V Semiconductors by Cyclic Injection of CH 4 /H 2 /Ar and O 2 with Constant Ar Flow

ELECTRON CYCLOTRON RESONANCE-REACTIVE ION ETCHING OF III-V SEMICONDUCTORS BY CYCLIC INJECTION OF CH4/H2/Ar AND O2 WITH CONSTANT Ar FLOW

Microcomputer-based avalanche injection system and determination of distributed area density of traps in SiO2 film

Enhanced Thermal Oxidation of Silicon by Oxygen Jet

Possible observation of P b 0 and P b 1 centers at irradiated (100)Si/SiO2 interface from electrical measurements

Synthesis of (Ba,Sr)TiO 3 Thin Films by Plasma-Activated Pulsed Laser Deposition Technique

液相堆積シリコン酸化膜／シリコン界面特性の改善

Proposal of Ge/SiGe five-layer asymmetric coupled quantum well for mach-zehnder modulators

Considerations on the Semiconductor-Thermo-Electric-Energy-Conversion Systems Operated under Low Temperature-Difference

Considerations on the Transient Thermal Impedance of Semiconductor valves

Anomalous Effect in La 2-x Sr x CuO 4 of Doping Level x= 1/4 n

Semiconductor thermoelectric-energy conversion systems working at low temperature differences

Suchergebnisse filtern