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Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes

Journal of applied physics, 2016-02, Vol.119 (6)

2016

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Effects of the flux-controlled cation off-stoichiometry in SrRuO3 grown by molecular beam epitaxy on its physical and electrical properties

Materials letters, 2020-12, Vol.281, p.128375, Article 128375

2020

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Opportunity for band alignment manipulation of perovskite oxide stacks by interfacial dipole layer formation

Solid-state electronics, 2021-11, Vol.185, p.108128, Article 108128

2021

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Depth resolved band alignments of ultrathin TiN/ZrO2 and TiN/ZrO2-Al2O3-ZrO2 dynamic random access memory capacitors

Applied physics letters, 2014-11, Vol.105 (20)

2014

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Ultra-thin ZrO2/SrO/ZrO2 insulating stacks for future dynamic random access memory capacitor applications

Journal of applied physics, 2015-06, Vol.117 (22)

2015

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Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties

Journal of Asian Ceramic Societies, 2022-07, Vol.10 (3), p.649-659

2022

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The effect of ozone concentration during atomic layer deposition on the properties of ZrO2 films for capacitor applications

Thin solid films, 2016-11, Vol.619, p.317-322

2016

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Conduction barrier offset engineering for DRAM capacitor scaling

Solid-state electronics, 2016-01, Vol.115, p.133-139

2016

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Crystallinity-Controlled Atomic Layer Deposition of Ti-Doped ZrO2 Thin Films

ECS Advances, 2024-01, Vol.3 (1), p.012002

2024

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Cost-Effective Silicon Vertical Diode Switch for Next-Generation Memory Devices

IEEE electron device letters, 2012-02, Vol.33 (2), p.242-244

2012

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Al2O3 blocking layer inserted ZrO2 Metal-Insulator-Metal capacitor for the improved electrical and interfacial properties

Thin solid films, 2020-11, Vol.713, p.138368, Article 138368

2020

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Atomic layer deposition of molybdenum oxide using (NtBu)2(NMe2)2Mo, hydrogen peroxide (H2O2), and ozone (O3) for DRAM application

Ceramics international, 2023-02, Vol.49 (3), p.5292-5297

2023

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Characteristics of High‐Crystallinity ZrO 2 Thin Films Deposited Using Remote Plasma Atomic Layer Deposition

Physica status solidi. A, Applications and materials science, 2023-01, Vol.220 (1)

2023

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Characteristics of High‐Crystallinity ZrO2 Thin Films Deposited Using Remote Plasma Atomic Layer Deposition

Physica status solidi. A, Applications and materials science, 2023-01, Vol.220 (1), p.n/a

2023

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Stabilization of the tetragonal phase in ZrO2 thin films according to ozone concentration using atomic layer deposition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2023-12, Vol.41 (6)

2023

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Low-temperature-atomic-layer-deposition of SiO2 using various organic precursors

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2017-01, Vol.35 (1)

2017

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A Route to MoO2 film fabrication via atomic layer deposition using Mo(IV) precursor and oxygen reactant for DRAM applications

Ceramics international, 2024-04, Vol.50 (8), p.13841-13848

2024

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Improvement of the electrical and interfacial propertie of TiN/ZrO2 by a modulated atomic layer deposition process with controlled O3 dosing

Thin solid films, 2019-04, Vol.675, p.153-159

2019

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Dielectric properties of sub 20 nm homoepitaxial SrTiO3 thin film grown by molecular beam epitaxy using oxygen plasma

Ferroelectrics, 2021-01, Vol.571 (1), p.76-84

2021

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Dielectric properties of sub 20 nm homoepitaxial SrTiO 3 thin film grown by molecular beam epitaxy using oxygen plasma

Ferroelectrics, 2021-01, Vol.571 (1), p.76-84

2021

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Structure of Li5AlS4 and comparison with other lithium-containing metal sulfides

Journal of solid state chemistry, 2018-01, Vol.257, p.19-25

2018

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Crystallinity-Controlled Atomic Layer Deposition of Ti-Doped ZrO 2 Thin Films

ECS Advances, 2024-03, Vol.3 (1), p.12002

2024

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Investigation of ultrathin Pt/ZrO2–Al2O3–ZrO2/TiN DRAM capacitors Schottky barrier height by internal photoemission spectroscopy

Current applied physics, 2017-02, Vol.17 (2), p.267-271

2017

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Study of Metal–Dielectric Interface for Improving Electrical Properties and Reliability of DRAM Capacitor

Advanced materials technologies, 2023-10, Vol.8 (20)

2023

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Interfacial engineering of ZrO 2 metal-insulator-metal capacitor using Al 2 O 3 /TiO 2 buffer layer for improved leakage properties

Journal of Asian Ceramic Societies, 2022-07, Vol.10 (3), p.649-659

2022

Volltextzugriff (PDF)

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Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes

Effects of the flux-controlled cation off-stoichiometry in SrRuO3 grown by molecular beam epitaxy on its physical and electrical properties

Opportunity for band alignment manipulation of perovskite oxide stacks by interfacial dipole layer formation

Depth resolved band alignments of ultrathin TiN/ZrO2 and TiN/ZrO2-Al2O3-ZrO2 dynamic random access memory capacitors

Ultra-thin ZrO2/SrO/ZrO2 insulating stacks for future dynamic random access memory capacitor applications

Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties

The effect of ozone concentration during atomic layer deposition on the properties of ZrO2 films for capacitor applications

Conduction barrier offset engineering for DRAM capacitor scaling

Crystallinity-Controlled Atomic Layer Deposition of Ti-Doped ZrO2 Thin Films

Cost-Effective Silicon Vertical Diode Switch for Next-Generation Memory Devices

Al2O3 blocking layer inserted ZrO2 Metal-Insulator-Metal capacitor for the improved electrical and interfacial properties

Atomic layer deposition of molybdenum oxide using (NtBu)2(NMe2)2Mo, hydrogen peroxide (H2O2), and ozone (O3) for DRAM application

Characteristics of High‐Crystallinity ZrO 2 Thin Films Deposited Using Remote Plasma Atomic Layer Deposition

Characteristics of High‐Crystallinity ZrO2 Thin Films Deposited Using Remote Plasma Atomic Layer Deposition

Stabilization of the tetragonal phase in ZrO2 thin films according to ozone concentration using atomic layer deposition

Low-temperature-atomic-layer-deposition of SiO2 using various organic precursors

A Route to MoO2 film fabrication via atomic layer deposition using Mo(IV) precursor and oxygen reactant for DRAM applications

Improvement of the electrical and interfacial propertie of TiN/ZrO2 by a modulated atomic layer deposition process with controlled O3 dosing

Dielectric properties of sub 20 nm homoepitaxial SrTiO3 thin film grown by molecular beam epitaxy using oxygen plasma

Dielectric properties of sub 20 nm homoepitaxial SrTiO 3 thin film grown by molecular beam epitaxy using oxygen plasma

Structure of Li5AlS4 and comparison with other lithium-containing metal sulfides

Crystallinity-Controlled Atomic Layer Deposition of Ti-Doped ZrO 2 Thin Films

Investigation of ultrathin Pt/ZrO2–Al2O3–ZrO2/TiN DRAM capacitors Schottky barrier height by internal photoemission spectroscopy

Study of Metal–Dielectric Interface for Improving Electrical Properties and Reliability of DRAM Capacitor

Interfacial engineering of ZrO 2 metal-insulator-metal capacitor using Al 2 O 3 /TiO 2 buffer layer for improved leakage properties

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