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Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories

Applied physics letters, 2008-06, Vol.92 (23)

2008

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Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

Applied physics letters, 2011-01, Vol.98 (4)

2011

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Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

IEEE electron device letters, 2009-12, Vol.30 (12), p.1326-1328

2009

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IEEE_Xplore

Ionic doping effect in ZrO2 resistive switching memory

Applied physics letters, 2010-03, Vol.96 (12)

2010

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Resistive Switching in CeOx Films for Nonvolatile Memory Application

IEEE electron device letters, 2009-04, Vol.30 (4), p.334-336

2009

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Impact of Line-Edge Roughness on Double-Gate Schottky-Barrier Field-Effect Transistors

IEEE transactions on electron devices, 2009-06, Vol.56 (6), p.1211-1219

2009

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IEEE_Xplore

Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory

IEEE electron device letters, 2011-03, Vol.32 (3), p.276-278

2011

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IEEE_Xplore

Performance Evaluation of GaAs-GaP Core-Shell-Nanowire Field-Effect Transistors

IEEE transactions on electron devices, 2009-06, Vol.56 (6), p.1199-1203

2009

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IEEE_Xplore

Monte Carlo simulation of p- and n-channel GOI MOSFETs by solving the quantum Boltzmann equation

IEEE transactions on electron devices, 2005-10, Vol.52 (10), p.2258-2264

2005

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IEEE_Xplore

Influence of sputtering power on properties of ZnO thin films fabricated by RF sputtering in room temperature

Science China. Information sciences, 2012-04, Vol.55 (4), p.951-955

2012

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Fabrication and characteristics of ZnO thin films deposited by RF sputtering on plastic substrates for flexible display

Science China. Information sciences, 2012-06, Vol.55 (6), p.1441-1445

2012

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High frequency performance of nano-scale ultra-thin-body Schottky-barrier n-MOSFETs

Science China. Information sciences, 2011-08, Vol.54 (8), p.1756-1761

2011

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The impact of line edge roughness on the stability of a FinFET SRAM

Semiconductor science and technology, 2009-02, Vol.24 (2), p.025005-025005 (9)

2009

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Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4), p.04DC11-04DC11-5

2011

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Effect of trapped charge accumulation on the retention of charge trapping memory

Journal of semiconductors, 2010-12, Vol.31 (12), p.90-93

2010

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Physical-Based Threshold Voltage and Mobility Models Including Shallow Trench Isolation Stress Effect on nMOSFETs

IEEE transactions on nanotechnology, 2011-07, Vol.10 (4), p.875-880

2011

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IEEE_Xplore

Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4S), p.4

2011

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Surrounding Strain Effects on the Performance of Si Nanowires Grown in Different Axial Orientations

IEEE transactions on nanotechnology, 2011-09, Vol.10 (5), p.1126-1130

2011

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IEEE_Xplore

Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs

IEEE transactions on nanotechnology, 2011-03, Vol.10 (2), p.244-249

2011

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IEEE_Xplore

Gate-Induced Image Force Barrier Lowering in Schottky Barrier FETs

IEEE transactions on nanotechnology, 2009-01, Vol.8 (1), p.10-15

2009

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IEEE_Xplore

Studies of Ti- and Ni-germanide Schottky contacts on n-Ge(1 0 0) substrates

Microelectronic engineering, 2005-10, Vol.82 (2), p.93-98

2005

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AC conductance of finite-length carbon nanotubes

Journal of physics. Condensed matter, 2006-10, Vol.18 (39), p.8707-8713, Article 8707

2006

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Recessed source/drain for sub-50 nm UTB SOI MOSFET

Semiconductor science and technology, 2007-05, Vol.22 (5), p.577-583

2007

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Fabrication and characteristics of ZnO MOS capacitors with high-K HfO2 gate dielectrics

Science China Technological Sciences, 2010-09, Vol.53 (9), p.2333-2336

2010

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A novel self-aligned double-gate TFT technology

IEEE electron device letters, 2001-11, Vol.22 (11), p.530-532

2001

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IEEE_Xplore

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Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories

Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

Ionic doping effect in ZrO2 resistive switching memory

Resistive Switching in CeOx Films for Nonvolatile Memory Application

Impact of Line-Edge Roughness on Double-Gate Schottky-Barrier Field-Effect Transistors

Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory

Performance Evaluation of GaAs-GaP Core-Shell-Nanowire Field-Effect Transistors

Monte Carlo simulation of p- and n-channel GOI MOSFETs by solving the quantum Boltzmann equation

Influence of sputtering power on properties of ZnO thin films fabricated by RF sputtering in room temperature

Fabrication and characteristics of ZnO thin films deposited by RF sputtering on plastic substrates for flexible display

High frequency performance of nano-scale ultra-thin-body Schottky-barrier n-MOSFETs

The impact of line edge roughness on the stability of a FinFET SRAM

Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors

Effect of trapped charge accumulation on the retention of charge trapping memory

Physical-Based Threshold Voltage and Mobility Models Including Shallow Trench Isolation Stress Effect on nMOSFETs

Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors

Surrounding Strain Effects on the Performance of Si Nanowires Grown in Different Axial Orientations

Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs

Gate-Induced Image Force Barrier Lowering in Schottky Barrier FETs

Studies of Ti- and Ni-germanide Schottky contacts on n-Ge(1 0 0) substrates

AC conductance of finite-length carbon nanotubes

Recessed source/drain for sub-50 nm UTB SOI MOSFET

Fabrication and characteristics of ZnO MOS capacitors with high-K HfO2 gate dielectrics

A novel self-aligned double-gate TFT technology

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