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An integrated split and dummy gates MOSFET with fast turn-off and reverse recovery characteristics

Chinese physics B, 2023-05, Vol.32 (6), p.67303-620

2023

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A 19 ps Precision and 170 M Samples/s Time-to-Digital Converter Implemented in FPGA with Online Calibration

Applied sciences, 2022-04, Vol.12 (7), p.3649

2022

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A FIN-LDMOS with Bulk Electron Accumulation Effect

Micromachines (Basel), 2023-06, Vol.14 (6), p.1225

2023

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Active trench barrier RC-IGBT with pinch-off and carrier accumulation effects

Journal of Power Electronics, 2024, 24(4), , pp.631-639

2024

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A snapback-free reverse-conducting IGBT with multiple extraction channels

Journal of Power Electronics, 2022, 22(2), , pp.377-382

2022

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The Simulation Study of the SOI Trench LDMOS With Lateral Super Junction

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.708-713

2018

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A Snapback-Free and Low-Loss RC-IGBT With Lateral FWD Integrated in the Terminal Region

IEEE access, 2019, Vol.7, p.183589-183595

2019

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A probabilistic analysis technique for single event transient sensitivity evaluation of phase-lock-loops

Microelectronics and reliability, 2019-09, Vol.100-101, p.113436, Article 113436

2019

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Characteristics of HfO2/Hf-based bipolar resistive memories

半导体学报：英文版, 2015-06 (6), p.80-84

毕津顺韩郑生

2015

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Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

IEEE access, 2019, Vol.7, p.115989-115996

2019

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Low-Cost and Highly Manufacturable Strained-Si Channel Technique for Strong Hole Mobility Enhancement on 35-nm Gate Length pMOSFETs

IEEE transactions on electron devices, 2007-06, Vol.54 (6), p.1394-1401

2007

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Investigation of Threshold Ion Range for Accurate Single Event Upset Measurements in Both SOI and Bulk Technologies

IEEE transactions on nuclear science, 2014-06, Vol.61 (3), p.1459-1467

2014

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Theoretical modification of the negative Miller capacitance during the switching transients of IGBTs

Journal of semiconductors, 2016-07, Vol.37 (7), p.63-67

滕渊朱阳军韩郑生叶甜春

2016

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Numerical investigation on the convergence of self-consistent Schrödinger-Poisson equations in semiconductor device transport simulation

Nanotechnology, 2024-07, Vol.35 (31), p.315001

2024

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Jiezi: An open-source Python software for simulating quantum transport based on non-equilibrium Green's function formalism

Computer physics communications, 2024-09, Vol.302, p.109251, Article 109251

2024

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Modeling of the Subthreshold Swing in Cryogenic MOSFET With the Combination of Gaussian Band Tail and Gaussian Interface State

IEEE transactions on electron devices, 2024-02, Vol.71 (2), p.1-6

2024

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Roles of the gate length and width of the transistors in increasing the single event upset resistance of SRAM cells

2017 IEEE 12th International Conference on ASIC (ASICON), 2017, p.219-221

2017

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Bulk Electron Accumulation LDMOS With Extended Superjunction Gate

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1900-1905

2022

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A Bulk Full-Gate SOI-LDMOS Device With Bulk Channel and Electron Accumulation Effect

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6286-6291

2021

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A Snapback-Free and Low-Loss RC-LIGBT With Integrated Double Self-Biased nMOS

IEEE transactions on electron devices, 2024-06, Vol.71 (6), p.3831-3837

2024

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An SOI LTIGBT With Self-Biased pMOS for Improved Short-Circuit Property and Reduced Turn-Off Loss

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1-6

2023

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Neutron-induced single-event-transient effects in ultrathin-body fully-depleted silicon-on-insulator MOSFETs

2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.SE.2.1-SE.2.5

2013

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The Drain Bias Modulation Effect of Random Telegraph Noise in Gate-All-Around FETs for Cryogenic Applications

IEEE electron device letters, 2024-04, Vol.45 (4), p.530-533

2024

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An RC-LIGBT With Dual Self-Driving nMOS For Enhancing Short Circuit Property and Modulating Electron Injection

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6138-6143

2023

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Transconductance bimodal effect of PDSOI submicron H-gate MOSFETs

Journal of semiconductors, 2013, Vol.34 (1), p.39-44

2013

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An integrated split and dummy gates MOSFET with fast turn-off and reverse recovery characteristics

A 19 ps Precision and 170 M Samples/s Time-to-Digital Converter Implemented in FPGA with Online Calibration

A FIN-LDMOS with Bulk Electron Accumulation Effect

Active trench barrier RC-IGBT with pinch-off and carrier accumulation effects

A snapback-free reverse-conducting IGBT with multiple extraction channels

The Simulation Study of the SOI Trench LDMOS With Lateral Super Junction

A Snapback-Free and Low-Loss RC-IGBT With Lateral FWD Integrated in the Terminal Region

A probabilistic analysis technique for single event transient sensitivity evaluation of phase-lock-loops

Characteristics of HfO2/Hf-based bipolar resistive memories

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

Low-Cost and Highly Manufacturable Strained-Si Channel Technique for Strong Hole Mobility Enhancement on 35-nm Gate Length pMOSFETs

Investigation of Threshold Ion Range for Accurate Single Event Upset Measurements in Both SOI and Bulk Technologies

Theoretical modification of the negative Miller capacitance during the switching transients of IGBTs

Numerical investigation on the convergence of self-consistent Schrödinger-Poisson equations in semiconductor device transport simulation

Jiezi: An open-source Python software for simulating quantum transport based on non-equilibrium Green's function formalism

Modeling of the Subthreshold Swing in Cryogenic MOSFET With the Combination of Gaussian Band Tail and Gaussian Interface State

Roles of the gate length and width of the transistors in increasing the single event upset resistance of SRAM cells

Bulk Electron Accumulation LDMOS With Extended Superjunction Gate

A Bulk Full-Gate SOI-LDMOS Device With Bulk Channel and Electron Accumulation Effect

A Snapback-Free and Low-Loss RC-LIGBT With Integrated Double Self-Biased nMOS

An SOI LTIGBT With Self-Biased pMOS for Improved Short-Circuit Property and Reduced Turn-Off Loss

Neutron-induced single-event-transient effects in ultrathin-body fully-depleted silicon-on-insulator MOSFETs

The Drain Bias Modulation Effect of Random Telegraph Noise in Gate-All-Around FETs for Cryogenic Applications

An RC-LIGBT With Dual Self-Driving nMOS For Enhancing Short Circuit Property and Modulating Electron Injection

Transconductance bimodal effect of PDSOI submicron H-gate MOSFETs

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