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Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention

Semiconductor science and technology, 2008-07, Vol.23 (7), p.075019

2008

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A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors

IEEE electron device letters, 2011-03, Vol.32 (3), p.282-284

2011

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Strengthening mechanism of Al matrix composites reinforced by nickel-coated graphene: Insights from molecular dynamics simulation

Physica. B, Condensed matter, 2021-01, Vol.601, p.412620, Article 412620

2021

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Monte Carlo simulation of Schottky contact with direct tunnelling model

Semiconductor science and technology, 2003-06, Vol.18 (6), p.576-581

2003

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Sputtering gas pressure and target power dependence on the microstructure and properties of DC-magnetron sputtered AlB2-type WB2 films

Journal of alloys and compounds, 2017-05, Vol.703, p.188-197

2017

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Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices

Journal of applied physics, 2009-03, Vol.105 (6)

2009

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The influence of hydrogen annealing on magnetism of Co-doped TiO2 films prepared by sol-gel method

Journal of magnetism and magnetic materials, 2007, Vol.308 (1), p.85-89

2007

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Mechanism of positive-bias temperature instability in sub-1-nm TaN/HfN/HfO2 gate stack with low preexisting traps

IEEE electron device letters, 2005-09, Vol.26 (9), p.610-612

2005

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Improved electrical and reliability characteristics of HfN-HfO2-Gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process

IEEE electron device letters, 2005-04, Vol.26 (4), p.237-239

2005

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Atomic simulation of interaction mechanism between dislocation and graphene in graphene/aluminum composites

Computational materials science, 2021-09, Vol.197, p.110604, Article 110604

2021

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A New Model for Two-Dimensional Electrical-Field-Dependent Vth Instability of pMOSFETs With Ultrathin DPN Gate Dielectrics

IEEE electron device letters, 2011-05, Vol.32 (5), p.605-607

2011

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Preparation and characterization of magnetic Fe3O4–chitosan nanoparticles loaded with isoniazid

Journal of magnetism and magnetic materials, 2015-05, Vol.381, p.120-126

2015

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A New Model for Two-Dimensional Electrical-Field-Dependent V Instability of pMOSFETs With Ultrathin DPN Gate Dielectrics

IEEE electron device letters, 2011-05, Vol.32 (5), p.605-607

2011

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Oxide-based RRAM: Physical based retention projection

2010 Proceedings of the European Solid State Device Research Conference, 2010, p.392-395

2010

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A strategy for improving mechanical properties of metallic glass by tailoring interface structure

Journal of non-crystalline solids, 2021-02, Vol.553, p.120464, Article 120464

2021

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The role of oxygen vacancies in magnetism of CoxTi1-xO2-δ films on Si(001) prepared by sol-gel method

Solid state communications, 2006-08, Vol.139 (6), p.263-267

2006

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Highly uniform resistive switching characteristics of TiN / ZrO 2 / Pt memory devices

Journal of applied physics, 2009-03, Vol.105 (6), p.061630-061630-4

2009

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Correlation between dielectric traps and BTI characteristics of high-k/ metal gate MOSFETs

2010 IEEE International Integrated Reliability Workshop Final Report, 2010, p.17-21

2010

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Preparation and characterization of magnetic Fe sub(3)O sub(4)-chitosan nanoparticles loaded with isoniazid

Journal of magnetism and magnetic materials, 2015-05, Vol.381, p.120-126

2015

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Analysis on incidence and mortality of ovarian cancer in Jiangsu province, 2006-2015

Zhōnghuá liúxíngbìng zázhì, 2020-11, Vol.41 (11), p.1859

2020

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SOI Schottky barrier tunnelling transistors fabricated with spacer technology

Electronics letters, 2004-04, Vol.40 (8), p.511

2004

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Report of cancer incidence and mortality in Jiangsu Province in 2013

Zhōnghuá yùfáng-yīxué zázhì, 2017-08, Vol.51 (8), p.703

2017

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Anticrosstalk characteristics correlated with the set process for α-Fe2O3/Nb–SrTiO3 stack-based resistive switching device

Applied physics letters, 2010-12, Vol.97 (26)

2010

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Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology

2009 Symposium on VLSI Technology, 2009, p.30-31

2009

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A unified physical model of switching behavior in oxide-based RRAM

2008 Symposium on VLSI Technology, 2008, p.100-101

2008

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Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention

A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors

Strengthening mechanism of Al matrix composites reinforced by nickel-coated graphene: Insights from molecular dynamics simulation

Monte Carlo simulation of Schottky contact with direct tunnelling model

Sputtering gas pressure and target power dependence on the microstructure and properties of DC-magnetron sputtered AlB2-type WB2 films

Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices

The influence of hydrogen annealing on magnetism of Co-doped TiO2 films prepared by sol-gel method

Mechanism of positive-bias temperature instability in sub-1-nm TaN/HfN/HfO2 gate stack with low preexisting traps

Improved electrical and reliability characteristics of HfN-HfO2-Gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process

Atomic simulation of interaction mechanism between dislocation and graphene in graphene/aluminum composites

A New Model for Two-Dimensional Electrical-Field-Dependent Vth Instability of pMOSFETs With Ultrathin DPN Gate Dielectrics

Preparation and characterization of magnetic Fe3O4–chitosan nanoparticles loaded with isoniazid

A New Model for Two-Dimensional Electrical-Field-Dependent V Instability of pMOSFETs With Ultrathin DPN Gate Dielectrics

Oxide-based RRAM: Physical based retention projection

A strategy for improving mechanical properties of metallic glass by tailoring interface structure

The role of oxygen vacancies in magnetism of CoxTi1-xO2-δ films on Si(001) prepared by sol-gel method

Highly uniform resistive switching characteristics of TiN / ZrO 2 / Pt memory devices

Correlation between dielectric traps and BTI characteristics of high-k/ metal gate MOSFETs

Preparation and characterization of magnetic Fe sub(3)O sub(4)-chitosan nanoparticles loaded with isoniazid

Analysis on incidence and mortality of ovarian cancer in Jiangsu province, 2006-2015

SOI Schottky barrier tunnelling transistors fabricated with spacer technology

Report of cancer incidence and mortality in Jiangsu Province in 2013

Anticrosstalk characteristics correlated with the set process for α-Fe2O3/Nb–SrTiO3 stack-based resistive switching device

Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology

A unified physical model of switching behavior in oxide-based RRAM

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