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Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain bias stress

Applied physics letters, 2012-01, Vol.100 (4), p.043503-043503-3

2012

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Effect of Deposition Temperature of SiOx Passivation Layer on the Electrical Performance of a-IGZO TFTs

IEEE electron device letters, 2012-03, Vol.33 (3), p.396-398

2012

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Low-Temperature Organic (CYTOP) Passivation for Improvement of Electric Characteristics and Reliability in IGZO TFTs

IEEE electron device letters, 2012-03, Vol.33 (3), p.381-383

2012

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New Depletion-Mode IGZO TFT Shift Register

IEEE electron device letters, 2011-02, Vol.32 (2), p.158-160

2011

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Effect of Metallic Composition on Electrical Properties of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors

IEEE transactions on electron devices, 2010-05, Vol.57 (5), p.1009-1014

2010

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High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators

Semiconductor science and technology, 2013-02, Vol.28 (2)

2013

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Investigation of Photo-Induced Hysteresis and Off-Current in Amorphous In-Ga-Zn Oxide Thin-Film Transistors Under UV Light Irradiation

IEEE transactions on electron devices, 2013-08, Vol.60 (8), p.2574-2579

2013

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Effects of ITO precursor thickness on transparent conductive Al doped ZnO film for solar cell applications

Solar energy materials and solar cells, 2011, Vol.95 (1), p.138-141

2011

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Highly Reliable Multiple-Channel IGZO Thin-Film Transistors Employing Asymmetric Spacing and Channel Width

IEEE electron device letters, 2013-06, Vol.34 (6), p.771-773

2013

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A new a-Si:H TFT pixel circuit compensating the threshold voltage shift of a-Si:H TFT and OLED for active matrix OLED

IEEE electron device letters, 2005-12, Vol.26 (12), p.897-899

2005

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The study of hot-carrier stress on poly-Si TFT employing C-V measurement

IEEE transactions on electron devices, 2005-04, Vol.52 (4), p.512-517

2005

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Increase of Breakdown Voltage on AlGaN/GaN HEMTs by Employing Proton Implantation

IEEE transactions on electron devices, 2009-03, Vol.56 (3), p.365-369

2009

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A Depletion-Mode a-IGZO TFT Shift Register With a Single Low-Voltage-Level Power Signal

IEEE electron device letters, 2011-08, Vol.32 (8), p.1092-1094

2011

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Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells

Solar energy materials and solar cells, 2012-10, Vol.105, p.317-321

2012

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Influence of Solvent on the Film Morphology, Crystallinity and Electrical Characteristics of Triisopropylsilyl Pentacene OTFTs

Journal of the Electrochemical Society, 2007, Vol.154 (12), p.H995

2007

Volltextzugriff (PDF)

Highly Reliable Depletion-Mode a-IGZO TFT Gate Driver Circuits for High-Frequency Display Applications Under Light Illumination

IEEE electron device letters, 2012-04, Vol.33 (4), p.528-530

2012

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A Depletion-Mode In-Ga-Zn-O Thin-Film Transistor Shift Register Embedded With a Full-Swing Level Shifter

IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.3012-3017

2011

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A new voltage-modulated AMOLED pixel design compensating for threshold voltage variation in poly-Si TFTs

IEEE electron device letters, 2004-10, Vol.25 (10), p.690-692

2004

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A New Poly-Si TFT Current-Mirror Pixel for Active Matrix Organic Light Emitting Diode

IEEE electron device letters, 2006-10, Vol.27 (10), p.830-833

2006

Volltextzugriff (PDF)

A Novel Depletion-Mode a-IGZO TFT Shift Register With a Node-Shared Structure

IEEE electron device letters, 2012-07, Vol.33 (7), p.1003-1005

2012

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High-voltage AlGaN/GaN Schottky barrier diodes on silicon using a post-process O2 treatment

Solid-state electronics, 2015-01, Vol.103, p.49-53

2015

Volltextzugriff (PDF)

The Effect of the Photo-Induced Carriers on the Reliability of Oxide TFTs Under Various Intensities of Light

IEEE electron device letters, 2012-02, Vol.33 (2), p.218-220

2012

Volltextzugriff (PDF)

Light-Induced Hysteresis of In-Ga-Zn-O Thin-Film Transistors With Various Temperatures

IEEE electron device letters, 2012-09, Vol.33 (9), p.1279-1281

2012

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A Novel Level Shifter Employing IGZO TFT

IEEE electron device letters, 2011-02, Vol.32 (2), p.167-169

2011

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A new current scaling pixel circuit for AMOLED

IEEE electron device letters, 2004-05, Vol.25 (5), p.280-282

2004

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Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain bias stress

Effect of Deposition Temperature of SiOx Passivation Layer on the Electrical Performance of a-IGZO TFTs

Low-Temperature Organic (CYTOP) Passivation for Improvement of Electric Characteristics and Reliability in IGZO TFTs

New Depletion-Mode IGZO TFT Shift Register

Effect of Metallic Composition on Electrical Properties of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors

High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators

Investigation of Photo-Induced Hysteresis and Off-Current in Amorphous In-Ga-Zn Oxide Thin-Film Transistors Under UV Light Irradiation

Effects of ITO precursor thickness on transparent conductive Al doped ZnO film for solar cell applications

Highly Reliable Multiple-Channel IGZO Thin-Film Transistors Employing Asymmetric Spacing and Channel Width

A new a-Si:H TFT pixel circuit compensating the threshold voltage shift of a-Si:H TFT and OLED for active matrix OLED

The study of hot-carrier stress on poly-Si TFT employing C-V measurement

Increase of Breakdown Voltage on AlGaN/GaN HEMTs by Employing Proton Implantation

A Depletion-Mode a-IGZO TFT Shift Register With a Single Low-Voltage-Level Power Signal

Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells

Influence of Solvent on the Film Morphology, Crystallinity and Electrical Characteristics of Triisopropylsilyl Pentacene OTFTs

Highly Reliable Depletion-Mode a-IGZO TFT Gate Driver Circuits for High-Frequency Display Applications Under Light Illumination

A Depletion-Mode In-Ga-Zn-O Thin-Film Transistor Shift Register Embedded With a Full-Swing Level Shifter

A new voltage-modulated AMOLED pixel design compensating for threshold voltage variation in poly-Si TFTs

A New Poly-Si TFT Current-Mirror Pixel for Active Matrix Organic Light Emitting Diode

A Novel Depletion-Mode a-IGZO TFT Shift Register With a Node-Shared Structure

High-voltage AlGaN/GaN Schottky barrier diodes on silicon using a post-process O2 treatment

The Effect of the Photo-Induced Carriers on the Reliability of Oxide TFTs Under Various Intensities of Light

Light-Induced Hysteresis of In-Ga-Zn-O Thin-Film Transistors With Various Temperatures

A Novel Level Shifter Employing IGZO TFT

A new current scaling pixel circuit for AMOLED

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