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Rational design of hierarchically porous birnessite-type manganese dioxides nanosheets on different one-dimensional titania-based nanowires for high performance supercapacitors

Journal of power sources, 2014-12, Vol.270, p.675-683

2014

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Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current

IEEE electron device letters, 2009-09, Vol.30 (9), p.981-983

2009

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Above-Room-Temperature Strong Ferromagnetism in 2D MnB Nanosheet

ACS nano, 2023-12, Vol.17 (23), p.24320-24328

2023

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A Silicon Tunnel Field-Effect Transistor with an In Situ Doped Single Crystalline Ge Source for Achieving Sub-60 mV/decade Subthreshold Swing

Chinese physics letters, 2013-08, Vol.30 (8), p.88502-1-088502-3

2013

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Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer

Chinese physics letters, 2013-11, Vol.30 (11), p.118501-1-118501-4

2013

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Phonon Limited Electron Mobility in Germanium FinFETs: Fin Direction Dependence

Chinese physics letters, 2019, Vol.36 (2), p.27301

2019

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Evolution of Ge and SiGe Quantum Dots under Excimer Laser Annealing

Chinese physics letters, 2008-01, Vol.25 (1), p.242-245

2008

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Germanium PMOSFETs with Low-Temperature Si2H6 Passivation Featuring High Hole Mobility and Superior Negative Bias Temperature Instability

中国物理快报：英文版, 2014-05 (5), p.191-194

王洪娟韩根全刘艳颜静张春福张进成郝跃

2014

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Impact of multi-domain effect on the effective carrier mobility of ferroelectric field-effect transistor

Nanotechnology, 2024-02, Vol.35 (9), p.95706

2024

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β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process

Science China. Physics, mechanics & astronomy, 2020-07, Vol.63 (7), p.277311, Article 277311

2020

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Anomalous dynamic performance in heterogeneous Ga 2 O 3 -on-SiC MOSFETs fabricated using ion-implantation cutting process

Physica scripta, 2024-10, Vol.99 (10), p.105931

2024

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Anomalous dynamic performance in heterogeneous Ga2O3-on-SiC MOSFETs fabricated using ion-implantation cutting process

Physica scripta, 2024-10, Vol.99 (10)

2024

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Phonon Limited Electron Mobility in Germanium FinFETs: Fin Direction DependenceSupported by the National Natural Science Foundation of China under Grant Nos 61534004, 61604112 and 61622405

Chinese physics letters, 2019-01, Vol.36 (2)

2019

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Ohmic Contact at Al/TiO 2 /n-Ge Interface with TiO 2 Deposited at Extremely Low Temperature

Chinese physics letters, 2018-02, Vol.35 (2), p.28501

2018

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Ohmic Contact at Al/TiO2/n-Ge Interface with TiO2 Deposited at Extremely Low Temperature Supported by the National Natural Science Foundation of China under Grant Nos 61534004, 61604112 and 61622405

Chinese physics letters, 2018-02, Vol.35 (2)

2018

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Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra

Opto-Electronic Advances, 2018-01, Vol.1 (3), p.18000401-18000410

2018

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Germanium PMOSFETs with Low-Temperature Si sub(2)H sub(6) Passivation Featuring High Hole Mobility and Superior Negative Bias Temperature Instability

Chinese physics letters, 2014-05, Vol.31 (5), p.058503-1-058503-4

2014

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Germanium PMOSFETs with Low-Temperature Si 2 H 6 Passivation Featuring High Hole Mobility and Superior Negative Bias Temperature Instability

Chinese physics letters, 2014-05, Vol.31 (5), p.58503

2014

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Non-Silicon microelectronics: Germanium and Germanium-Tin field-effect transistors

SCIENTIA SINICA Physica, Mechanica & Astronomica, 2016-10, Vol.46 (10), p.107303

2016

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Simultaneous Determination of Eight Active Components in Liuwei Wuling Tablet Using HPLC

Chinese herbal medicines, 2016-10, Vol.8 (4), p.331-336

2016

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Serum and urine metabolomics study reveals a distinct diagnostic model for cancer cachexia

Journal of cachexia, sarcopenia and muscle, 2018-02, Vol.9 (1), p.71-85

2018

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A MEMS-Based Wearable, Flexible Embedded High-Density Sensor With Self-Adhesive PEDOT:PSS Gel for HD-sEMG Monitoring

IEEE sensors journal, 2023-05, Vol.23 (10), p.11016-11024

2023

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Colletotrichum truncatum causing anthracnose disease of Iris lactea in Beijing, China

Journal of phytopathology, 2022-06, Vol.170 (6), p.391-398

2022

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Bacterial mineralization of struvite using MgO as magnesium source and its potential for nutrient recovery

Chemical engineering journal (Lausanne, Switzerland : 1996), 2018-11, Vol.351, p.195-202

2018

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An integrated model for exploring college students' engagement and competence development in flipped learning using partial least squares path modeling

Interactive learning environments, 2023-05, Vol.31 (4), p.2351-2370

2023

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Rational design of hierarchically porous birnessite-type manganese dioxides nanosheets on different one-dimensional titania-based nanowires for high performance supercapacitors

Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current

Above-Room-Temperature Strong Ferromagnetism in 2D MnB Nanosheet

A Silicon Tunnel Field-Effect Transistor with an In Situ Doped Single Crystalline Ge Source for Achieving Sub-60 mV/decade Subthreshold Swing

Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer

Phonon Limited Electron Mobility in Germanium FinFETs: Fin Direction Dependence

Evolution of Ge and SiGe Quantum Dots under Excimer Laser Annealing

Germanium PMOSFETs with Low-Temperature Si2H6 Passivation Featuring High Hole Mobility and Superior Negative Bias Temperature Instability

Impact of multi-domain effect on the effective carrier mobility of ferroelectric field-effect transistor

β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process

Anomalous dynamic performance in heterogeneous Ga 2 O 3 -on-SiC MOSFETs fabricated using ion-implantation cutting process

Anomalous dynamic performance in heterogeneous Ga2O3-on-SiC MOSFETs fabricated using ion-implantation cutting process

Phonon Limited Electron Mobility in Germanium FinFETs: Fin Direction DependenceSupported by the National Natural Science Foundation of China under Grant Nos 61534004, 61604112 and 61622405

Ohmic Contact at Al/TiO 2 /n-Ge Interface with TiO 2 Deposited at Extremely Low Temperature

Ohmic Contact at Al/TiO2/n-Ge Interface with TiO2 Deposited at Extremely Low Temperature Supported by the National Natural Science Foundation of China under Grant Nos 61534004, 61604112 and 61622405

Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra

Germanium PMOSFETs with Low-Temperature Si sub(2)H sub(6) Passivation Featuring High Hole Mobility and Superior Negative Bias Temperature Instability

Germanium PMOSFETs with Low-Temperature Si 2 H 6 Passivation Featuring High Hole Mobility and Superior Negative Bias Temperature Instability

Non-Silicon microelectronics: Germanium and Germanium-Tin field-effect transistors

Simultaneous Determination of Eight Active Components in Liuwei Wuling Tablet Using HPLC

Serum and urine metabolomics study reveals a distinct diagnostic model for cancer cachexia

A MEMS-Based Wearable, Flexible Embedded High-Density Sensor With Self-Adhesive PEDOT:PSS Gel for HD-sEMG Monitoring

Colletotrichum truncatum causing anthracnose disease of Iris lactea in Beijing, China

Bacterial mineralization of struvite using MgO as magnesium source and its potential for nutrient recovery

An integrated model for exploring college students' engagement and competence development in flipped learning using partial least squares path modeling

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