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Improvement of 650-nm red-emitting GaIn0.17N/GaIn0.38N multiple quantum wells on ScAlMgO4 (0001) substrate by suppressing impurity diffusion/penetration

Applied physics letters, 2022-04, Vol.120 (14)

2022

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n-type GaN surface etched green light-emitting diode to reduce non-radiative recombination centers

Applied physics letters, 2021-01, Vol.118 (2)

2021

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Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires

Nanoscale, 2019-10, Vol.11 (4), p.18746-18757

2019

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Comparative Study on Temperature‐Dependent Internal Quantum Efficiency and Light–Extraction Efficiency in III‐Nitride–, III‐Phosphide–, and III‐Arsenide–based Light‐Emitting Diodes

Physica status solidi. A, Applications and materials science, 2024-07, Vol.221 (14)

2024

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Growth of Ga0.70In0.30N/GaN Quantum-Wells on a ScAlMgO4 (0001) Substrate with an Ex-Situ Sputtered-AlN Buffer Layer

Materials, 2024-01, Vol.17 (1), p.167

2024

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Thermodynamic analysis of GaInN-based light-emitting diodes operated by quasi-resonant optical excitation

Journal of applied physics, 2020-09, Vol.128 (12)

2020

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Efficiency Enhancement Mechanism of an Underlying Layer in GaInN‐Based Green Light–Emitting Diodes

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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Space–Charge‐Limited Photocurrent as a Possible Cause for Low Power Conversion Efficiency in GaInN/GaN‐Based Optoelectronic Semiconductors

Physica status solidi. A, Applications and materials science, 2024-03

2024

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Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence

Applied physics letters, 2012-04, Vol.100 (15), p.153506-153506-4

2012

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Analysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodes

Applied physics letters, 2014-03, Vol.104 (9)

2014

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Nonradiative recombination mechanisms in InGaN/GaN-based light-emitting diodes investigated by temperature-dependent measurements

Applied physics letters, 2014-04, Vol.104 (15)

2014

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Improved Uniform Current Injection into Core‐Shell‐Type GaInN Nanowire Light‐Emitting Diodes by Optimizing Growth Condition and Indium‐Tin‐Oxide Deposition

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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Improved Reverse Leakage Current in GaInN-Based LEDs With a Sputtered AlN Buffer Layer

IEEE photonics technology letters, 2019-12, Vol.31 (24), p.1971-1974

2019

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Determination of internal quantum efficiency in GaInN-based light-emitting diode under electrical injection: carrier recombination dynamics analysis

Applied physics express, 2019-03, Vol.12 (3), p.32006

2019

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Influence of carrier overflow on the forward-voltage characteristics of InGaN-based light-emitting diodes

Applied physics letters, 2014-11, Vol.105 (19)

2014

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Enhanced Internal Quantum Efficiency of Bandgap-Engineered Green W-Shaped Quantum Well Light-Emitting Diode

Applied sciences, 2019-01, Vol.9 (1), p.77

2019

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Identifying the cause of thermal droop in GaInN-based LEDs by carrier- and thermo-dynamics analysis

Scientific reports, 2020-10, Vol.10 (1), p.17433-17433, Article 17433

2020

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Modified Shockley Equation for GaInN-Based Light-Emitting Diodes: Origin of the Power- Efficiency Degradation Under High Current Injection

IEEE journal of quantum electronics, 2019-08, Vol.55 (4), p.1-11

2019

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Factors Determining the Carrier Distribution in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

IEEE journal of quantum electronics, 2018-02, Vol.54 (1), p.1-7

2018

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Measuring the Internal Quantum Efficiency of Light-Emitting Diodes at an Arbitrary Temperature

IEEE journal of quantum electronics, 2018-04, Vol.54 (2), p.1-6

2018

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Analysis of impurity doping in tunnel junction grown on core–shell structure composed of GaInN/GaN multiple-quantum-shells and GaN nanowire

Japanese Journal of Applied Physics, 2022-01, Vol.61 (1), p.12002

2022

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Role of surface defects in the efficiency degradation of GaInN-based green LEDs

Applied physics express, 2020-01, Vol.13 (1), p.12007

2020

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Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes

IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.587-592

2015

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Suppression of (0001) plane emission in GaInN/GaN multi-quantum nanowires for efficient micro-LEDs

Nanophotonics (Berlin, Germany), 2022-12, Vol.11 (21), p.4793-4804

2022

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Carrier accumulation in the active region and its impact on the device performance of InGaN-based light-emitting diodes

Applied physics express, 2017-12, Vol.10 (12), p.122101

2017

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Improvement of 650-nm red-emitting GaIn0.17N/GaIn0.38N multiple quantum wells on ScAlMgO4 (0001) substrate by suppressing impurity diffusion/penetration

n-type GaN surface etched green light-emitting diode to reduce non-radiative recombination centers

Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires

Comparative Study on Temperature‐Dependent Internal Quantum Efficiency and Light–Extraction Efficiency in III‐Nitride–, III‐Phosphide–, and III‐Arsenide–based Light‐Emitting Diodes

Growth of Ga0.70In0.30N/GaN Quantum-Wells on a ScAlMgO4 (0001) Substrate with an Ex-Situ Sputtered-AlN Buffer Layer

Thermodynamic analysis of GaInN-based light-emitting diodes operated by quasi-resonant optical excitation

Efficiency Enhancement Mechanism of an Underlying Layer in GaInN‐Based Green Light–Emitting Diodes

Space–Charge‐Limited Photocurrent as a Possible Cause for Low Power Conversion Efficiency in GaInN/GaN‐Based Optoelectronic Semiconductors

Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence

Analysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodes

Nonradiative recombination mechanisms in InGaN/GaN-based light-emitting diodes investigated by temperature-dependent measurements

Improved Uniform Current Injection into Core‐Shell‐Type GaInN Nanowire Light‐Emitting Diodes by Optimizing Growth Condition and Indium‐Tin‐Oxide Deposition

Improved Reverse Leakage Current in GaInN-Based LEDs With a Sputtered AlN Buffer Layer

Determination of internal quantum efficiency in GaInN-based light-emitting diode under electrical injection: carrier recombination dynamics analysis

Influence of carrier overflow on the forward-voltage characteristics of InGaN-based light-emitting diodes

Enhanced Internal Quantum Efficiency of Bandgap-Engineered Green W-Shaped Quantum Well Light-Emitting Diode

Identifying the cause of thermal droop in GaInN-based LEDs by carrier- and thermo-dynamics analysis

Modified Shockley Equation for GaInN-Based Light-Emitting Diodes: Origin of the Power- Efficiency Degradation Under High Current Injection

Factors Determining the Carrier Distribution in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

Measuring the Internal Quantum Efficiency of Light-Emitting Diodes at an Arbitrary Temperature

Analysis of impurity doping in tunnel junction grown on core–shell structure composed of GaInN/GaN multiple-quantum-shells and GaN nanowire

Role of surface defects in the efficiency degradation of GaInN-based green LEDs

Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes

Suppression of (0001) plane emission in GaInN/GaN multi-quantum nanowires for efficient micro-LEDs

Carrier accumulation in the active region and its impact on the device performance of InGaN-based light-emitting diodes

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