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Half-metallic nature of the low-temperature grown Co2MnSi films on SrTiO3

Journal of alloys and compounds, 2021-02, Vol.854, p.155571, Article 155571

2021

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Substrate dependent reduction of Gilbert damping in annealed Heusler alloy thin films grown on group IV semiconductors

Applied physics letters, 2021-10, Vol.119 (17)

2021

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Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator

Thin solid films, 2016-08, Vol.613, p.24-28

2016

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Spin transport in p-Ge through a vertically stacked Ge/Fe3Si junction

Applied physics letters, 2016-07, Vol.109 (2)

2016

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A pseudo-single-crystalline germanium film for flexible electronics

Applied physics letters, 2015-01, Vol.106 (4)

2015

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Hanle spin precession in a two-terminal lateral spin valve

Applied physics letters, 2019-06, Vol.114 (24)

2019

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Effect of Fe atomic layers at the ferromagnet–semiconductor interface on temperature-dependent spin transport in semiconductors

Journal of applied physics, 2021-05, Vol.129 (18)

2021

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Low-temperature growth of fully epitaxial CoFe/Ge/Fe3Si layers on Si for vertical-type semiconductor spintronic devices

Semiconductor science and technology, 2017-08, Vol.32 (9)

2017

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All-epitaxial Co2FeSi/Ge/Co2FeSi trilayers fabricated by Sn-induced low-temperature epitaxy

Journal of applied physics, 2016-01, Vol.119 (4)

2016

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Giant magnetoelectric effect in an L21-ordered Co2FeSi/Pb(Mg1/3Nb2/3)O3-PbTiO3 multiferroic heterostructure

Applied physics letters, 2021-04, Vol.118 (14)

2021

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Epitaxial growth of Sb-doped Ge layers on ferromagnetic Fe3Si for vertical semiconductor spintronic devices

Semiconductor science and technology, 2018-09, Vol.33 (10)

2018

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Experimental estimation of the spin diffusion length in undoped p-Ge on Fe3Si using vertical spin-valve devices

Journal of applied physics, 2021-01, Vol.129 (1)

2021

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Effect of the interface resistance of CoFe/MgO contacts on spin accumulation in silicon

Applied physics letters, 2012-06, Vol.100 (25)

2012

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Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n+-Si junctions

Journal of applied physics, 2015-05, Vol.117 (17)

2015

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Study of Spin Transport and Magnetoresistance Effect in Silicon-based Lateral Spin Devices for Spin-MOSFET Applications

Journal of the Magnetics Society of Japan, 2020/05/01, Vol.44(3), pp.56-63

2020

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Electrical properties of pseudo-single-crystalline germanium thin-film-transistors fabricated on glass substrates

Applied physics letters, 2015-10, Vol.107 (14)

2015

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Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier

Applied physics letters, 2009-05, Vol.94 (18)

2009

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Giant Spin Accumulation in Silicon Nonlocal Spin-Transport Devices

Physical review applied, 2017-12, Vol.8 (6), Article 064023

2017

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Local magnetoresistance through Si and its bias voltage dependence in ferromagnet/MgO/silicon-on-insulator lateral spin valves

Journal of applied physics, 2014-05, Vol.115 (17)

2014

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Spin accumulation created electrically in an n -type germanium channel using Schottky tunnel contacts

Journal of applied physics, 2012-04, Vol.111 (7), p.07C503-07C503-3

2012

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Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces

Applied physics letters, 2010-04, Vol.96 (16)

2010

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Effect of atomic-arrangement matching on La2O3/Ge heterostructures for epitaxial high- k -gate-stacks

Journal of applied physics, 2015-12, Vol.118 (22)

2015

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Electrical properties of pseudo-single-crystalline Ge films grown by Au-induced layer exchange crystallization at 250 °C

Journal of applied physics, 2018-06, Vol.123 (21), p.215704

2018

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Mechanism of Fermi level pinning at metal/germanium interfaces

Physical review. B, Condensed matter and materials physics, 2011-11, Vol.84 (20), Article 205301

2011

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Improvement of magnetic and structural stabilities in high-quality Co2FeSi1−xAlx/Si heterointerfaces

Applied physics letters, 2014-08, Vol.105 (7)

2014

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Half-metallic nature of the low-temperature grown Co2MnSi films on SrTiO3

Substrate dependent reduction of Gilbert damping in annealed Heusler alloy thin films grown on group IV semiconductors

Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator

Spin transport in p-Ge through a vertically stacked Ge/Fe3Si junction

A pseudo-single-crystalline germanium film for flexible electronics

Hanle spin precession in a two-terminal lateral spin valve

Effect of Fe atomic layers at the ferromagnet–semiconductor interface on temperature-dependent spin transport in semiconductors

Low-temperature growth of fully epitaxial CoFe/Ge/Fe3Si layers on Si for vertical-type semiconductor spintronic devices

All-epitaxial Co2FeSi/Ge/Co2FeSi trilayers fabricated by Sn-induced low-temperature epitaxy

Giant magnetoelectric effect in an L21-ordered Co2FeSi/Pb(Mg1/3Nb2/3)O3-PbTiO3 multiferroic heterostructure

Epitaxial growth of Sb-doped Ge layers on ferromagnetic Fe3Si for vertical semiconductor spintronic devices

Experimental estimation of the spin diffusion length in undoped p-Ge on Fe3Si using vertical spin-valve devices

Effect of the interface resistance of CoFe/MgO contacts on spin accumulation in silicon

Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n+-Si junctions

Study of Spin Transport and Magnetoresistance Effect in Silicon-based Lateral Spin Devices for Spin-MOSFET Applications

Electrical properties of pseudo-single-crystalline germanium thin-film-transistors fabricated on glass substrates

Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier

Giant Spin Accumulation in Silicon Nonlocal Spin-Transport Devices

Local magnetoresistance through Si and its bias voltage dependence in ferromagnet/MgO/silicon-on-insulator lateral spin valves

Spin accumulation created electrically in an n -type germanium channel using Schottky tunnel contacts

Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces

Effect of atomic-arrangement matching on La2O3/Ge heterostructures for epitaxial high- k -gate-stacks

Electrical properties of pseudo-single-crystalline Ge films grown by Au-induced layer exchange crystallization at 250 °C

Mechanism of Fermi level pinning at metal/germanium interfaces

Improvement of magnetic and structural stabilities in high-quality Co2FeSi1−xAlx/Si heterointerfaces

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