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Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane

Science (American Association for the Advancement of Science), 2009-01, Vol.323 (5914), p.610-613

2009

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Alloy splitting of the FeGa acceptor level in dilute AlxGa1−xN

Applied physics letters, 2023-11, Vol.123 (22)

2023

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Deep level traps in (010) β-Ga2O3 epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga2O3 substrates

Journal of applied physics, 2024-07, Vol.136 (4)

2024

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FeGa (0/−) acceptor level as a reference energy level in dilute AlxGa1−xN

Applied physics letters, 2024-06, Vol.124 (23)

2024

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Efficiency droop in zincblende InGaN/GaN quantum wells

Nanoscale, 2024-07, Vol.16 (29), p.13953-13961

2024

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The effect of FeGa (0/–) level presence on material properties in dilute AlxGa1−xN layers

Journal of applied physics, 2024-05, Vol.135 (17)

2024

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Graphene oxide films for field effect surface passivation of silicon for solar cells

Solar energy materials and solar cells, 2018-12, Vol.187, p.189-193

2018

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Electron emission and capture by oxygen-related bistable thermal double donors in silicon studied with junction capacitance techniques

Journal of applied physics, 2018-12, Vol.124 (22)

2018

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Passivation of thermally-induced defects with hydrogen in float-zone silicon

Journal of physics. D, Applied physics, 2021-07, Vol.54 (27), p.275105

2021

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THz operation of asymmetric-nanochannel devices

Journal of physics. Condensed matter, 2008-09, Vol.20 (38), p.384203-384203 (5)

2008

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Pressure coefficients of Raman modes of carbon nanotubes resolved by chirality: Environmental effect on graphene sheet

Physical review. B, Condensed matter and materials physics, 2013-02, Vol.87 (8), Article 085416

2013

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Recombination via transition metals in solar silicon: The significance of hydrogen–metal reactions and lattice sites of metal atoms

Physica status solidi. A, Applications and materials science, 2017-07, Vol.214 (7), p.n/a

2017

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Powerful recombination centers resulting from reactions of hydrogen with carbon–oxygen defects in n‐type Czochralski‐grown silicon

Physica status solidi. PSS-RRL. Rapid research letters, 2017-08, Vol.11 (8), p.n/a

2017

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Investigation into the deformation of carbon nanotubes and their composites through the use of Raman spectroscopy

Composites. Part A, Applied science and manufacturing, 2001-01, Vol.32 (3), p.401-411

2001

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Donor ionization in size controlled silicon nanocrystals: The transition from defect passivation to free electron generation

Journal of applied physics, 2013-01, Vol.113 (2)

2013

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Photomodulated Reflectivity Measurement of Free-Carrier Dynamics in InGaN/GaN Quantum Wells

ACS photonics, 2018-11, Vol.5 (11), p.4437-4446

2018

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The effect of aluminium on the post-anneal concentration of ion implanted bismuth in silica thin films

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2015-12, Vol.365, p.86-88

2015

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Variations in the Raman peak shift as a function of hydrostatic pressure for various carbon nanostructures: A simple geometric effect

Physical review. B, Condensed matter, 2003, Vol.67 (3), Article 035417

2003

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Quantum well mobility and the effect of gate dielectrics in remote doped InSb/AlxIn1 − xSb heterostructures

Semiconductor science and technology, 2010-12, Vol.25 (12), p.125005

2010

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Fossil charcoal quantification using manual and image analysis approaches

Holocene (Sevenoaks), 2018-08, Vol.28 (8), p.1345-1353

2018

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Raman scattering and absorption study of the high-pressure wurtzite to rocksalt phase transition of GaN

Physical review. B, Condensed matter and materials physics, 2004-06, Vol.69 (23), p.235207.1-235207.5, Article 235207

2004

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Impurity-induced Huang–Rhys factor in beryllium δ-doped GaAs/AlAs multiple quantum wells: fractional-dimensional space approach

Semiconductor science and technology, 2007-09, Vol.22 (9), p.1070-1076

2007

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The surface passivation mechanism of graphene oxide for crystalline silicon

2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), 2019, p.1931-1934

2019

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Resonance Raman spectroscopy of carbon nanotubes: pressure effects on G-mode

High pressure research, 2014-04, Vol.34 (2), p.191-197

2014

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Recombination centers resulting from reactions of hydrogen and oxygen in n-type Czochralski silicon

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, p.0688-0693

2016

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Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane

Alloy splitting of the FeGa acceptor level in dilute AlxGa1−xN

Deep level traps in (010) β-Ga2O3 epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga2O3 substrates

FeGa (0/−) acceptor level as a reference energy level in dilute AlxGa1−xN

Efficiency droop in zincblende InGaN/GaN quantum wells

The effect of FeGa (0/–) level presence on material properties in dilute AlxGa1−xN layers

Graphene oxide films for field effect surface passivation of silicon for solar cells

Electron emission and capture by oxygen-related bistable thermal double donors in silicon studied with junction capacitance techniques

Passivation of thermally-induced defects with hydrogen in float-zone silicon

THz operation of asymmetric-nanochannel devices

Pressure coefficients of Raman modes of carbon nanotubes resolved by chirality: Environmental effect on graphene sheet

Recombination via transition metals in solar silicon: The significance of hydrogen–metal reactions and lattice sites of metal atoms

Powerful recombination centers resulting from reactions of hydrogen with carbon–oxygen defects in n‐type Czochralski‐grown silicon

Investigation into the deformation of carbon nanotubes and their composites through the use of Raman spectroscopy

Donor ionization in size controlled silicon nanocrystals: The transition from defect passivation to free electron generation

Photomodulated Reflectivity Measurement of Free-Carrier Dynamics in InGaN/GaN Quantum Wells

The effect of aluminium on the post-anneal concentration of ion implanted bismuth in silica thin films

Variations in the Raman peak shift as a function of hydrostatic pressure for various carbon nanostructures: A simple geometric effect

Quantum well mobility and the effect of gate dielectrics in remote doped InSb/AlxIn1 − xSb heterostructures

Fossil charcoal quantification using manual and image analysis approaches

Raman scattering and absorption study of the high-pressure wurtzite to rocksalt phase transition of GaN

Impurity-induced Huang–Rhys factor in beryllium δ-doped GaAs/AlAs multiple quantum wells: fractional-dimensional space approach

The surface passivation mechanism of graphene oxide for crystalline silicon

Resonance Raman spectroscopy of carbon nanotubes: pressure effects on G-mode

Recombination centers resulting from reactions of hydrogen and oxygen in n-type Czochralski silicon

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