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Strain effect on the performance of proton-irradiated GaN-based HEMT

Applied physics. A, Materials science & processing, 2023-05, Vol.129 (5), Article 374

2023

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A Junctionless Nanowire Transistor With a Dual-Material Gate

IEEE transactions on electron devices, 2012-07, Vol.59 (7), p.1829-1836

2012

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Starch Paper-Based Triboelectric Nanogenerator for Human Perspiration Sensing

Nanoscale research letters, 2018-11, Vol.13 (1), p.365-6, Article 365

2018

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A Compact Model of Subthreshold Current With Source/Drain Depletion Effect for the Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs

IEEE transactions on electron devices, 2016-05, Vol.63 (5), p.2176-2181

2016

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Compact Model for Double-Gate Tunnel FETs With Gate-Drain Underlap

IEEE transactions on electron devices, 2017-12, Vol.64 (12), p.5242-5248

2017

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A Short Channel Double-Gate Junctionless Transistor Model Including the Dynamic Channel Boundary Effect

IEEE transactions on electron devices, 2016-12, Vol.63 (12), p.4661-4667

2016

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Analytical Current Model for Long-Channel Junctionless Double-Gate MOSFETs

IEEE transactions on electron devices, 2016-03, Vol.63 (3), p.959-965

2016

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Uniaxial Strain Effects on Electron Ballistic Transport in Gate-All-Around Silicon Nanowire MOSFETs

IEEE transactions on electron devices, 2011-11, Vol.58 (11), p.3829-3836

2011

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Paper-based methodology for investigation of triboelectric nanogenerators

Energy reports, 2019-11, Vol.5, p.393-397

2019

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Interfacial Shearing and Transverse Normal Stress in a Superconducting Coated Conductor Strip with Combined Transport Current and Magnetic Field

Journal of superconductivity and novel magnetism, 2023-03, Vol.36 (3), p.821-829

2023

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Suppression of tunneling leakage current in junctionless nanowire transistors

Semiconductor science and technology, 2013-12, Vol.28 (12), p.125016

2013

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Zero-Mask Contact Fuse for One-Time-Programmable Memory in Standard CMOS Processes

IEEE electron device letters, 2011-07, Vol.32 (7), p.955-957

2011

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The effect of the non-uniform critical current density on the magnetoelastic behavior of bulk superconductors: Case of a long cylindrical superconductor

Physica. C, Superconductivity, 2024-09, Vol.624, p.1354580, Article 1354580

2024

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Electromagnetic Stress Analysis of High-Temperature Superconducting Coated Conductor Strip After Partial Debonding at the Edge Under the Combined Transport Current and Magnetic Field

IEEE transactions on applied superconductivity, 2024-10, Vol.34 (7), p.1-10

2024

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Electromagnetic response analysis of high temperature superconducting coated conductor tape with local debonding: Case of transporting current in an external magnetic field

Physica. C, Superconductivity, 2024-03, Vol.618, p.1354469, Article 1354469

2024

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Effects of Fin Sidewall Angle on Subthreshold Characteristics of Junctionless Multigate Transistors

Japanese Journal of Applied Physics, 2013-10, Vol.52 (10), p.104302-104302-4

2013

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A Compact CMOS Compatible Oxide Antifuse With Polysilicon Diode Driver

IEEE transactions on electron devices, 2012-09, Vol.59 (9), p.2539-2541

2012

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Investigation of trench process variation on the recessed-gate junctionless MOSFETs considering the circuit application

Semiconductor science and technology, 2020-08, Vol.35 (8), p.85002

2020

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Comparative Analysis of Carrier Statistics on MOSFET and Tunneling FET Characteristics

IEEE journal of the Electron Devices Society, 2015-11, Vol.3 (6), p.447-451

2015

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High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5282-5288

2018

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The study of bending properties of monolayer MoS in non-collinear electrodes using first principles theory

Physical chemistry chemical physics : PCCP, 2020-10, Vol.22 (38), p.21888-21892

2020

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The study of bending properties of monolayer MoS 2 in non-collinear electrodes using first principles theory

Physical chemistry chemical physics : PCCP, 2020-10, Vol.22 (38), p.21888-21892

2020

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Source/Drain Engineered Charge-Plasma Junctionless Transistor for the Immune of Line Edge Roughness Effect

IEEE transactions on electron devices, 2018-05, Vol.65 (5), p.1873-1879

2018

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The study of bending properties of monolayer MoS2 in non-collinear electrodes using first principles theory

Physical chemistry chemical physics : PCCP, 2020-01, Vol.22 (38), p.21888-21892

2020

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Study on the Risk Management Framework of International EPC Cement Engineering Project

Advanced materials research, 2012, Vol.446-449, p.3842-3851

2012

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Strain effect on the performance of proton-irradiated GaN-based HEMT

A Junctionless Nanowire Transistor With a Dual-Material Gate

Starch Paper-Based Triboelectric Nanogenerator for Human Perspiration Sensing

A Compact Model of Subthreshold Current With Source/Drain Depletion Effect for the Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs

Compact Model for Double-Gate Tunnel FETs With Gate-Drain Underlap

A Short Channel Double-Gate Junctionless Transistor Model Including the Dynamic Channel Boundary Effect

Analytical Current Model for Long-Channel Junctionless Double-Gate MOSFETs

Uniaxial Strain Effects on Electron Ballistic Transport in Gate-All-Around Silicon Nanowire MOSFETs

Paper-based methodology for investigation of triboelectric nanogenerators

Interfacial Shearing and Transverse Normal Stress in a Superconducting Coated Conductor Strip with Combined Transport Current and Magnetic Field

Suppression of tunneling leakage current in junctionless nanowire transistors

Zero-Mask Contact Fuse for One-Time-Programmable Memory in Standard CMOS Processes

The effect of the non-uniform critical current density on the magnetoelastic behavior of bulk superconductors: Case of a long cylindrical superconductor

Electromagnetic Stress Analysis of High-Temperature Superconducting Coated Conductor Strip After Partial Debonding at the Edge Under the Combined Transport Current and Magnetic Field

Electromagnetic response analysis of high temperature superconducting coated conductor tape with local debonding: Case of transporting current in an external magnetic field

Effects of Fin Sidewall Angle on Subthreshold Characteristics of Junctionless Multigate Transistors

A Compact CMOS Compatible Oxide Antifuse With Polysilicon Diode Driver

Investigation of trench process variation on the recessed-gate junctionless MOSFETs considering the circuit application

Comparative Analysis of Carrier Statistics on MOSFET and Tunneling FET Characteristics

High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime

The study of bending properties of monolayer MoS in non-collinear electrodes using first principles theory

The study of bending properties of monolayer MoS 2 in non-collinear electrodes using first principles theory

Source/Drain Engineered Charge-Plasma Junctionless Transistor for the Immune of Line Edge Roughness Effect

The study of bending properties of monolayer MoS2 in non-collinear electrodes using first principles theory

Study on the Risk Management Framework of International EPC Cement Engineering Project

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