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Single quantum dot-in-a-rod embedded in a photonic nanowire waveguide for telecom band emission

Applied physics letters, 2020-09, Vol.117 (11)

2020

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Mode-locked pulses from mid-infrared quantum cascade lasers

Optics express, 2009-07, Vol.17 (15), p.12929-12943

2009

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Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height

Optics letters, 2012-03, Vol.37 (6), p.1103

2012

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Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy

Applied physics letters, 1998-02, Vol.72 (8), p.921-923

1998

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Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2006-05, Vol.24 (3), p.624-628

2006

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Si (111) substrates as highly effective pseudomasks for selective growth of GaN material and devices by ammonia-molecular-beam epitaxy

Applied physics letters, 2006-04, Vol.88 (17)

2006

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Growth and fabrication of quantum dots superluminescent diodes using the indium-flush technique: A new approach in controlling the bandwidth

Journal of crystal growth, 2009-03, Vol.311 (7), p.1803-1806

2009

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Broadband superluminescent diodes with height-engineered InAs-GaAs quantum dots

Electronics letters, 2010-08, Vol.46 (16), p.1144-1146

2010

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Microphotoluminescence mapping of laterally overgrown GaN layers on patterned Si (111) substrates

Applied physics letters, 2005-09, Vol.87 (13)

2005

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Growth of crack-free, carbon-doped GaN and AlGaN∕GaN high electron mobility transistor structures on Si (111) substrates by ammonia molecular beam epitaxy

Applied physics letters, 2006-06, Vol.88 (25)

2006

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Electrical Characterization and Surface Morphology of Optimized Ti∕Al∕Ti∕Au Ohmic Contacts for AlGaN∕GaN HEMTs

Journal of the Electrochemical Society, 2006-01, Vol.153 (8), p.G746

2006

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Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE

Journal of crystal growth, 1998-05, Vol.187 (2), p.167-177

1998

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Selectively grown AlGaN/GaN HEMTs on Si(1 1 1) substrates for integration with silicon microelectronics

Journal of crystal growth, 2009-03, Vol.311 (7), p.2087-2090

2009

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Effect of template morphology on the efficiency of InGaN ∕ GaN quantum wells and light-emitting diodes grown by molecular-beam epitaxy

Applied physics letters, 2005-03, Vol.86 (12), p.121110-121110-3

2005

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AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy

Solid-state electronics, 2005-05, Vol.49 (5), p.802-807

2005

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AlGaN/GaN HFETs fabricated from maskless selectively grown mesas on Si(111) substrates

Electronics letters, 2007-10, Vol.43 (22), p.1230-1231

2007

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Improvement of the optical properties of metalorganic chemical vapor deposition grown GaN on sapphire by an in situ SiN treatment

Applied physics letters, 2001-10, Vol.79 (15), p.2390-2392

2001

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Single photoelectron detection after selective excitation of electron heavy-hole and electron light-hole pairs in double quantum dots

Physical review. B, Condensed matter and materials physics, 2014-08, Vol.90 (8), Article 085306

2014

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The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy

Applied physics letters, 1998-08, Vol.73 (9), p.1278-1280

1998

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Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-12, Vol.50 (1), p.97-104

1997

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Tuning the electrically evaluated electron Landé g factor in GaAs quantum dots and quantum wells of different well widths

Physical review. B, Condensed matter and materials physics, 2014-12, Vol.90 (23), Article 235310

2014

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GaN nanostructures and HFET structures selectively grown on silicon substrates by ammonia-MBE

Journal of crystal growth, 2007-04, Vol.301, p.442-446

2007

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Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (1 1 1) substrates

Journal of crystal growth, 2003-02, Vol.248, p.568-572

2003

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Optimization of Si/N Treatment Time of Sapphire Surface and Its Effect on the MOVPE GaN Overlayers

Physica status solidi. A, Applied research, 1999-11, Vol.176 (1), p.677-681

1999

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Monitoring the self-heating in a high frequency GaN HFET

Solid-state electronics, 2006-06, Vol.50 (6), p.1046-1050

2006

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Single quantum dot-in-a-rod embedded in a photonic nanowire waveguide for telecom band emission

Mode-locked pulses from mid-infrared quantum cascade lasers

Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height

Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy

Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

Si (111) substrates as highly effective pseudomasks for selective growth of GaN material and devices by ammonia-molecular-beam epitaxy

Growth and fabrication of quantum dots superluminescent diodes using the indium-flush technique: A new approach in controlling the bandwidth

Broadband superluminescent diodes with height-engineered InAs-GaAs quantum dots

Microphotoluminescence mapping of laterally overgrown GaN layers on patterned Si (111) substrates

Growth of crack-free, carbon-doped GaN and AlGaN∕GaN high electron mobility transistor structures on Si (111) substrates by ammonia molecular beam epitaxy

Electrical Characterization and Surface Morphology of Optimized Ti∕Al∕Ti∕Au Ohmic Contacts for AlGaN∕GaN HEMTs

Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE

Selectively grown AlGaN/GaN HEMTs on Si(1 1 1) substrates for integration with silicon microelectronics

Effect of template morphology on the efficiency of InGaN ∕ GaN quantum wells and light-emitting diodes grown by molecular-beam epitaxy

AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy

AlGaN/GaN HFETs fabricated from maskless selectively grown mesas on Si(111) substrates

Improvement of the optical properties of metalorganic chemical vapor deposition grown GaN on sapphire by an in situ SiN treatment

Single photoelectron detection after selective excitation of electron heavy-hole and electron light-hole pairs in double quantum dots

The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy

Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire

Tuning the electrically evaluated electron Landé g factor in GaAs quantum dots and quantum wells of different well widths

GaN nanostructures and HFET structures selectively grown on silicon substrates by ammonia-MBE

Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (1 1 1) substrates

Optimization of Si/N Treatment Time of Sapphire Surface and Its Effect on the MOVPE GaN Overlayers

Monitoring the self-heating in a high frequency GaN HFET

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