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A 1.1 GHz 12 μA/Mb-Leakage SRAM Design in 65 nm Ultra-Low-Power CMOS Technology With Integrated Leakage Reduction for Mobile Applications

IEEE journal of solid-state circuits, 2008, Vol.43 (1), p.172-179

2008

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12.5 nm base pseudomorphic heterojunction bipolar transistors achieving fT=710GHz and fMAX=340GHz

Applied physics letters, 2005-12, Vol.87 (25)

2005

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12.5 nm base pseudomorphic heterojunction bipolar transistors achieving f T = 710 GHz and f MAX = 340 GHz

Applied physics letters, 2005-12, Vol.87 (25), p.252109-252109-3

2005

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Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600 GHz

Applied physics letters, 2005-04, Vol.86 (15), p.152101-152101-3

2005

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Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600GHz

Applied physics letters, 2005-04, Vol.86 (15)

2005

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Graded base type-II InP/GaAsSb DHBT with fT=475 GHz

IEEE electron device letters, 2006-02, Vol.27 (2), p.84-86

2006

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Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with fT of 452 GHz

IEEE electron device letters, 2003-07, Vol.24 (7), p.436-438

2003

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Performance enhancement of composition-graded-base type-II In P ∕ Ga As Sb double-heterojunction bipolar transistors with f T > 500 GHz

Applied physics letters, 2006-05, Vol.88 (22), p.222101-222101-3

2006

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Performance enhancement of composition-graded-base type-II InP∕GaAsSb double-heterojunction bipolar transistors with fT>500GHz

Applied physics letters, 2006-05, Vol.88 (22)

2006

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3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact power delivery, RF (5G and beyond) and SoC applications

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.17.3.1-17.3.4

2019

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Submicron InP-InGaAs single heterojunction bipolar transistors with fT of 377 GHz

IEEE electron device letters, 2003-05, Vol.24 (5), p.292-294

2003

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Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA

IEEE electron device letters, 2003-07, Vol.24 (7), p.427-429

2003

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Submicron scaling of indium phosphide/indium gallium arsenide heterojunction bipolar transistors toward terahertz bandwidths

Hafez, Walid Mahmoud

2005

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Pseudomorphic InP/InGaAs Heterojunction Bipolar Transistors (PHBTs) Experimentally Demonstrating fT = 765 GHz at 25°C Increasing to fT = 845 GHz at -55°C

2006 International Electron Devices Meeting, 2006, p.1-4

2006

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Over 500 GHz InP heterojunction bipolar transistors

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004, 2004, p.653-658

2004

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0.25 μm emitter InP SHBTs with fT = 550 GHz and BVceo > 2V

2004

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Productivity performance of peach trees, insecticidal and antibacterial bioactivities of leaf extracts as affected by nanofertilizers foliar application

Scientific reports, 2021-05, Vol.11 (1), p.10205-19, Article 10205

2021

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Myristica fragrans Kernels Prevent Paracetamol-Induced Hepatotoxicity by Inducing Anti-Apoptotic Genes and Nrf2/HO-1 Pathway

International journal of molecular sciences, 2019-02, Vol.20 (4), p.993

2019

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Isolation of avian influenza H5N1 virus from vaccinated commercial layer flock in Egypt

Virology journal, 2012-11, Vol.9 (1), p.294-294, Article 294

2012

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A Decentralized Technique for Autonomous Service Restoration in Active Radial Distribution Networks

IEEE transactions on smart grid, 2018-05, Vol.9 (3), p.1911-1919

2018

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RNA-binding proteins RBM-HuR, RBM3 and PODXL expression in urothelial carcinoma of the urinary bladder. Prognostic and clinical implications

Contemporary oncology (Poznań, Poland), 2021-01, Vol.25 (4), p.279-290

2021

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Isolation of H9N2 avian influenza virus from bobwhite quail (Colinus virginianus) in Egypt

Archives of virology, 2012-06, Vol.157 (6), p.1167-1172

2012

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ROLE OF SONOMAMMOGRAPHY IN MONITORING THE RESPONSE OF NEOADJUVANT CHEMOTHERAPY IN MALIGNANT BREAST MASSES

QJM : An International Journal of Medicine, 2021-10, Vol.114 (Supplement_1)

2021

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Extended Drones Tracking From ISAR Images With Doppler Effect and Orientation Based Robust Sub-Random Matrices Algorithm

IEEE transactions on vehicular technology, 2022-12, Vol.71 (12), p.12648-12666

2022

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Source, toxicity and carcinogenic health risk assessment of heavy metals

Reviews on environmental health, 2024-03, Vol.39 (1), p.77-90

2024

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A 1.1 GHz 12 μA/Mb-Leakage SRAM Design in 65 nm Ultra-Low-Power CMOS Technology With Integrated Leakage Reduction for Mobile Applications

12.5 nm base pseudomorphic heterojunction bipolar transistors achieving fT=710GHz and fMAX=340GHz

12.5 nm base pseudomorphic heterojunction bipolar transistors achieving f T = 710 GHz and f MAX = 340 GHz

Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600 GHz

Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600GHz

Graded base type-II InP/GaAsSb DHBT with fT=475 GHz

Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with fT of 452 GHz

Performance enhancement of composition-graded-base type-II In P ∕ Ga As Sb double-heterojunction bipolar transistors with f T > 500 GHz

Performance enhancement of composition-graded-base type-II InP∕GaAsSb double-heterojunction bipolar transistors with fT>500GHz

3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact power delivery, RF (5G and beyond) and SoC applications

Submicron InP-InGaAs single heterojunction bipolar transistors with fT of 377 GHz

Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA

Submicron scaling of indium phosphide/indium gallium arsenide heterojunction bipolar transistors toward terahertz bandwidths

Pseudomorphic InP/InGaAs Heterojunction Bipolar Transistors (PHBTs) Experimentally Demonstrating fT = 765 GHz at 25°C Increasing to fT = 845 GHz at -55°C

Over 500 GHz InP heterojunction bipolar transistors

0.25 μm emitter InP SHBTs with fT = 550 GHz and BVceo > 2V

Productivity performance of peach trees, insecticidal and antibacterial bioactivities of leaf extracts as affected by nanofertilizers foliar application

Myristica fragrans Kernels Prevent Paracetamol-Induced Hepatotoxicity by Inducing Anti-Apoptotic Genes and Nrf2/HO-1 Pathway

Isolation of avian influenza H5N1 virus from vaccinated commercial layer flock in Egypt

A Decentralized Technique for Autonomous Service Restoration in Active Radial Distribution Networks

RNA-binding proteins RBM-HuR, RBM3 and PODXL expression in urothelial carcinoma of the urinary bladder. Prognostic and clinical implications

Isolation of H9N2 avian influenza virus from bobwhite quail (Colinus virginianus) in Egypt

ROLE OF SONOMAMMOGRAPHY IN MONITORING THE RESPONSE OF NEOADJUVANT CHEMOTHERAPY IN MALIGNANT BREAST MASSES

Extended Drones Tracking From ISAR Images With Doppler Effect and Orientation Based Robust Sub-Random Matrices Algorithm

Source, toxicity and carcinogenic health risk assessment of heavy metals

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