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Characteristic enhancement of the blue LED chip by the growth and fabrication on patterned sapphire (0 0 0 1) substrate

Journal of crystal growth, 2010, Vol.312 (2), p.258-262

2010

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Characteristics of Back-illumination UV Photodetector Fabricated with Al x Ga 1-x N Heterostructure

Japanese Journal of Applied Physics, 2005-04, Vol.44 (4S), p.2553

2005

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Characteristics of GaN/Si(1 1 1) epitaxy grown using Al 0.1Ga 0.9N/AlN composite nucleation layers having different thicknesses of AlN

Journal of crystal growth, 2002, Vol.241 (3), p.289-296

2002

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Characteristics of GaN/Si(1 1 1) epitaxy grown using Al0.1Ga0.9N/AlN composite nucleation layers having different thicknesses of AlN

Journal of crystal growth, 2002-06, Vol.241 (3), p.289-296

2002

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Characteristics of GaN/Si(111) Epitaxy Grown using Al0.1Ga0.9N/AlN Composite Nucleation Layers having Different Thicknesses of AlN

MRS proceedings, 2002, Vol.722, Article K7.3

2002

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Comparative study of electroabsorption in In Ga N ∕ Ga N quantum zigzag heterostructures with polarization-induced electric fields

Applied physics letters, 2008-05, Vol.92 (20), p.201105-201105-3

2008

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Comparative study of electroabsorption in InGaN∕GaN quantum zigzag heterostructures with polarization-induced electric fields

Applied physics letters, 2008-05, Vol.92 (20)

2008

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Doping characteristics of Al 0.15Ga 0.85N epilayers with various Mg incorporations

Journal of crystal growth, 2003, Vol.256 (1), p.56-62

2003

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Doping characteristics of Al0.15Ga0.85N epilayers with various Mg incorporations

Journal of crystal growth, 2003-08, Vol.256 (1-2), p.56-62

2003

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The effect of p-GaN : Mg layers on the turn-on voltage of p–n junction LED

Journal of crystal growth, 2001, Vol.222 (3), p.459-464

2001

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Effects of a thin (In)GaAs layer on the structural and optical properties of InAs∕InAlGaAs quantum dots

Journal of applied physics, 2007-12, Vol.102 (11)

2007

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Effects of a thin (In)GaAs layer on the structural and optical propertiesof In As ∕ In Al Ga As quantum dots

Journal of applied physics, 2007-12, Vol.102 (11), p.113526-113526-5

2007

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Efficiency enhancement of CIGS compound solar cell fabricated using homomorphic thin Cr2O3 diffusion barrier formed on stainless steel substrate

Applied surface science, 2016-12, Vol.389, p.645-650

2016

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Emission characteristics of shape-engineered InAs/InAlGaAs quantum dots subjected to thermal treatments

Journal of the Korean Physical Society, 2016, 69(1), , pp.85-90

2016

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Erratum: "Metal-organic chemical vapor deposition growth of InGaN/GaN high power green light emitting diode: Effects of InGaN well protection and electron reservoir layer" [ J. Appl. Phys. 102 , 053519 ( 2007 ) ]

Journal of applied physics, 2007-12, Vol.102 (11), p.119901-119901-1

2007

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Evaluation of mechanical properties under a temperature gradient field

Measurement science & technology, 2001-11, Vol.12 (11), p.1881-1885

2001

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Experimental and computational analyses of electroabsorption in polar InGaN/GaN quantum zigzag heterostructures

LEOS 2008 - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2008, p.435-436

2008

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Improvement of device performances, including electrostatic discharge characteristics, of InGaN/GaN light-emitting diodes by using a Si-doped graded superlattice

Journal of the Korean Physical Society, 2017, 70(11), , pp.1001-1006

2017

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Improvements in Optical Power and Emission Angle of Blue Light Emitting Diodes Using Patterned Sapphire Substrates with Low Threading Dislocation Densities

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.04DH02-04DH02-6

2010

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Improving the Reliability of a Reciprocating Compressor for Applications in a Refrigerator

Hanʼguk Chaeryo Hakhoe chi, 2007-11, Vol.17 (11), p.580-580~586

2007

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In-situ observation in a scanning electron microscope on the exfoliation behavior of galvannealed Zn–Fe coating layers

Surface & coatings technology, 2007-04, Vol.201 (14), p.6261-6266

2007

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The influences of Al xGa 1− xN layer on the characteristics of UV LED structure

Journal of crystal growth, 2001, Vol.226 (2), p.215-222

2001

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The influences of AlxGa1-xN layer on the characteristics of UV LED structure

Journal of crystal growth, 2001-06, Vol.226 (2-3), p.215-222

2001

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Influences of an Electron Reservoir Layer on the Optical and the Electrical Properties of InGaN/GaN MQW LEDs

Journal of the Korean Physical Society, 2009, 54(4), , pp.1666-1670

2009

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Influences of dot-in-a-well structure and GaAs insertion layer on InP-based InAs quantum dots

Journal of the Korean Physical Society, 2013, 62(9), , pp.1274-1279

2013

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Characteristic enhancement of the blue LED chip by the growth and fabrication on patterned sapphire (0 0 0 1) substrate

Characteristics of Back-illumination UV Photodetector Fabricated with Al x Ga 1-x N Heterostructure

Characteristics of GaN/Si(1 1 1) epitaxy grown using Al 0.1Ga 0.9N/AlN composite nucleation layers having different thicknesses of AlN

Characteristics of GaN/Si(1 1 1) epitaxy grown using Al0.1Ga0.9N/AlN composite nucleation layers having different thicknesses of AlN

Characteristics of GaN/Si(111) Epitaxy Grown using Al0.1Ga0.9N/AlN Composite Nucleation Layers having Different Thicknesses of AlN

Comparative study of electroabsorption in In Ga N ∕ Ga N quantum zigzag heterostructures with polarization-induced electric fields

Comparative study of electroabsorption in InGaN∕GaN quantum zigzag heterostructures with polarization-induced electric fields

Doping characteristics of Al 0.15Ga 0.85N epilayers with various Mg incorporations

Doping characteristics of Al0.15Ga0.85N epilayers with various Mg incorporations

The effect of p-GaN : Mg layers on the turn-on voltage of p–n junction LED

Effects of a thin (In)GaAs layer on the structural and optical properties of InAs∕InAlGaAs quantum dots

Effects of a thin (In)GaAs layer on the structural and optical propertiesof In As ∕ In Al Ga As quantum dots

Efficiency enhancement of CIGS compound solar cell fabricated using homomorphic thin Cr2O3 diffusion barrier formed on stainless steel substrate

Emission characteristics of shape-engineered InAs/InAlGaAs quantum dots subjected to thermal treatments

Erratum: "Metal-organic chemical vapor deposition growth of InGaN/GaN high power green light emitting diode: Effects of InGaN well protection and electron reservoir layer" [ J. Appl. Phys. 102 , 053519 ( 2007 ) ]

Evaluation of mechanical properties under a temperature gradient field

Experimental and computational analyses of electroabsorption in polar InGaN/GaN quantum zigzag heterostructures

Improvement of device performances, including electrostatic discharge characteristics, of InGaN/GaN light-emitting diodes by using a Si-doped graded superlattice

Improvements in Optical Power and Emission Angle of Blue Light Emitting Diodes Using Patterned Sapphire Substrates with Low Threading Dislocation Densities

Improving the Reliability of a Reciprocating Compressor for Applications in a Refrigerator

In-situ observation in a scanning electron microscope on the exfoliation behavior of galvannealed Zn–Fe coating layers

The influences of Al xGa 1− xN layer on the characteristics of UV LED structure

The influences of AlxGa1-xN layer on the characteristics of UV LED structure

Influences of an Electron Reservoir Layer on the Optical and the Electrical Properties of InGaN/GaN MQW LEDs

Influences of dot-in-a-well structure and GaAs insertion layer on InP-based InAs quantum dots

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