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Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above

IEEE transactions on microwave theory and techniques, 2000-04, Vol.48 (4), p.626-631

2000

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Microwave solid-state active devices

IEEE transactions on microwave theory and techniques, 2002-03, Vol.50 (3), p.760-779

2002

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Design, modeling, and characterization of monolithically integrated InP-based (1.55 /spl mu/m) high-speed (24 Gb/s) p-i-n/HBT front-end photoreceivers

Journal of lightwave technology, 1996-08, Vol.14 (8), p.1831-1839

1996

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Resonant tunneling diodes: models and properties

Proceedings of the IEEE, 1998-04, Vol.86 (4), p.641-660

1998

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Digital circuit applications of resonant tunneling devices

Proceedings of the IEEE, 1998-04, Vol.86 (4), p.664-686

1998

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Power performance of InP-based single and double heterojunction bipolar transistors

IEEE transactions on microwave theory and techniques, 1999-08, Vol.47 (8), p.1449-1456

1999

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16-GHz bandwidth InAlAs-InGaAs monolithically integrated p-i-n/HBT photoreceiver

IEEE photonics technology letters, 1995-11, Vol.7 (11), p.1339-1341

1995

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Two-terminal millimeter-wave sources

IEEE transactions on microwave theory and techniques, 1998-06, Vol.46 (6), p.739-746

1998

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Characterization of resonant tunneling diodes for microwave and millimeter-wave detection

IEEE transactions on microwave theory and techniques, 1991-11, Vol.39 (11), p.1876-1880

1991

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High-efficiency class-A power amplifiers with a dual-bias-control scheme

IEEE transactions on microwave theory and techniques, 1999-08, Vol.47 (8), p.1426-1432

1999

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Compact multiple-valued multiplexers using negative differential resistance devices

IEEE journal of solid-state circuits, 1996-08, Vol.31 (8), p.1151-1156

1996

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High fmax InP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE

IEEE electron device letters, 1997-11, Vol.18 (11), p.553-555

1997

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Tunneling devices and applications in high functionality/speed digital circuits

Solid-state electronics, 1997-10, Vol.41 (10), p.1515-1524

1997

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High f/sub max/ InP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE

IEEE electron device letters, 1997-11, Vol.18 (11), p.553-555

1997

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Theory of unipolar ballistic and quasiballistic transit-time oscillators for a terahertz range

Physica. E, Low-dimensional systems & nanostructures, 2003-07, Vol.19 (1), p.89-94

2003

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Power and stability limitations of resonant tunneling diodes

IEEE transactions on microwave theory and techniques, 1990-07, Vol.38 (7), p.864-872

1990

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Characteristics of Coupled Microstrip Transmission Lines-I: Coupled-Mode Formulation of Inhomogeneous Lines

IEEE transactions on microwave theory and techniques, 1970-04, Vol.18 (4), p.217-222

1970

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Potential and capabilities of two-terminal devices as millimeter- and submillimeter-wave fundamental sources

1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282), 1999, Vol.3, p.933-936 vol.3

1999

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GaAs TUNNETT diodes on diamond heat sinks for 100 GHz and above

IEEE transactions on microwave theory and techniques, 1995-01, Vol.43 (1), p.210-213

1995

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Electron dispersion relations with negative effective masses in quantum wells grown on the cleaved edge of a superlattice

Physica. E, Low-dimensional systems & nanostructures, 2002, Vol.12 (1), p.276-280

2002

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Theoretical and experimental DC characterization of InGaAs-based abrupt emitter HBT's

IEEE transactions on electron devices, 1995-06, Vol.42 (6), p.1047-1058

1995

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Device and circuit simulation of quantum electronic devices

IEEE transactions on computer-aided design of integrated circuits and systems, 1995-06, Vol.14 (6), p.653-662

1995

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Nonlinear models for the intermodulation analysis of FET mixers

IEEE transactions on microwave theory and techniques, 1995-05, Vol.43 (5), p.1037-1045

1995

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Numerical study on the injection performance of AlGaAs/GaAs abrupt emitter heterojunction bipolar transistors

IEEE transactions on electron devices, 1994-02, Vol.41 (2), p.138-147

1994

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D-band InP Gunn devices with second-harmonic power extraction up to 290 GHz

Electronics letters, 1994-11, Vol.30 (23), p.1950-1951

1994

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Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above

Microwave solid-state active devices

Design, modeling, and characterization of monolithically integrated InP-based (1.55 /spl mu/m) high-speed (24 Gb/s) p-i-n/HBT front-end photoreceivers

Resonant tunneling diodes: models and properties

Digital circuit applications of resonant tunneling devices

Power performance of InP-based single and double heterojunction bipolar transistors

16-GHz bandwidth InAlAs-InGaAs monolithically integrated p-i-n/HBT photoreceiver

Two-terminal millimeter-wave sources

Characterization of resonant tunneling diodes for microwave and millimeter-wave detection

High-efficiency class-A power amplifiers with a dual-bias-control scheme

Compact multiple-valued multiplexers using negative differential resistance devices

High fmax InP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE

Tunneling devices and applications in high functionality/speed digital circuits

High f/sub max/ InP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE

Theory of unipolar ballistic and quasiballistic transit-time oscillators for a terahertz range

Power and stability limitations of resonant tunneling diodes

Characteristics of Coupled Microstrip Transmission Lines-I: Coupled-Mode Formulation of Inhomogeneous Lines

Potential and capabilities of two-terminal devices as millimeter- and submillimeter-wave fundamental sources

GaAs TUNNETT diodes on diamond heat sinks for 100 GHz and above

Electron dispersion relations with negative effective masses in quantum wells grown on the cleaved edge of a superlattice

Theoretical and experimental DC characterization of InGaAs-based abrupt emitter HBT's

Device and circuit simulation of quantum electronic devices

Nonlinear models for the intermodulation analysis of FET mixers

Numerical study on the injection performance of AlGaAs/GaAs abrupt emitter heterojunction bipolar transistors

D-band InP Gunn devices with second-harmonic power extraction up to 290 GHz

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