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Ballistic and quasiballistic tunnel transit time oscillators for the terahertz range: Linear admittance

Journal of applied physics, 2003-05, Vol.93 (9), p.5435-5446

2003

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Resonant tunneling diodes: models and properties

Proceedings of the IEEE, 1998-04, Vol.86 (4), p.641-660

1998

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Digital circuit applications of resonant tunneling devices

Proceedings of the IEEE, 1998-04, Vol.86 (4), p.664-686

1998

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Power and stability limitations of resonant tunneling diodes

IEEE transactions on microwave theory and techniques, 1990-07, Vol.38 (7), p.864-872

1990

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GaAs TUNNETT diodes on diamond heat sinks for 100 GHz and above

IEEE transactions on microwave theory and techniques, 1995-01, Vol.43 (1), p.210-213

1995

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Device and circuit simulation of quantum electronic devices

IEEE transactions on computer-aided design of integrated circuits and systems, 1995-06, Vol.14 (6), p.653-662

1995

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Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above

IEEE transactions on microwave theory and techniques, 2000-04, Vol.48 (4), p.626-631

2000

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Quantum real-space transfer in a heterostructure overgrown on the cleaved edge of a superlattice

Journal of applied physics, 2003-01, Vol.93 (1), p.330-340

2003

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Optically pumped intersubband lasers based on quantum wells

IEEE journal of quantum electronics, 1995-01, Vol.31 (1), p.135-143

1995

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GaAs single-drift flat-profile IMPATT diodes for CW operation at D band

Electronics letters, 1992, Vol.28 (23), p.2176-2177

1992

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Potential and capabilities of two-terminal devices as millimeter- and submillimeter-wave fundamental sources

1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282), 1999, Vol.3, p.933-936 vol.3

1999

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Time-dependent electron tunneling through time-dependent tunnel barriers

Journal of applied physics, 2004-10, Vol.96 (7), p.3831-3838

2004

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Theoretical and experimental DC characterization of InGaAs-based abrupt emitter HBT's

IEEE transactions on electron devices, 1995-06, Vol.42 (6), p.1047-1058

1995

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Two-terminal millimeter-wave sources

IEEE transactions on microwave theory and techniques, 1998-06, Vol.46 (6), p.739-746

1998

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Microwave solid-state active devices

IEEE transactions on microwave theory and techniques, 2002-03, Vol.50 (3), p.760-779

2002

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Observation of intrinsic bistability in resonant tunneling diode modeling

Applied physics letters, 1989-07, Vol.55 (4), p.371-373

1989

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Nonlinear models for the intermodulation analysis of FET mixers

IEEE transactions on microwave theory and techniques, 1995-05, Vol.43 (5), p.1037-1045

1995

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Numerical study on the injection performance of AlGaAs/GaAs abrupt emitter heterojunction bipolar transistors

IEEE transactions on electron devices, 1994-02, Vol.41 (2), p.138-147

1994

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D-band (110–170 GHz) InP gunn devices

Solid-state electronics, 1993-11, Vol.36 (11), p.1547-1555

1993

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Electron-interface phonon interaction in multiple quantum well structures

Semiconductor science and technology, 1998-08, Vol.13 (8A), p.A147-A151

1998

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Time-dependent modeling of resonant-tunneling diodes from direct solution of the Schrödinger equation

Journal of applied physics, 1988-10, Vol.64 (7), p.3564-3569

1988

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Differential tunnel transparency of a rectangular heterostructural barrier for the terahertz frequency range

Journal of applied physics, 2005-05, Vol.97 (9)

2005

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Wigner function modeling of resonant tunneling diodes with high peak-to-valley ratios

Journal of applied physics, 1988-11, Vol.64 (10), p.5041-5044

1988

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Tunnel injection transit-time diodes for W-band power generation

Electronics letters, 1992-02, Vol.28 (5), p.511-513

1992

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Enhanced performance in GaAs TUNNETT diode oscillators above 100 GHz through diamond heat sinking and power combining

IEEE transactions on microwave theory and techniques, 1994-12, Vol.42 (12), p.2498-2503, Article 2498

1994

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Ballistic and quasiballistic tunnel transit time oscillators for the terahertz range: Linear admittance

Resonant tunneling diodes: models and properties

Digital circuit applications of resonant tunneling devices

Power and stability limitations of resonant tunneling diodes

GaAs TUNNETT diodes on diamond heat sinks for 100 GHz and above

Device and circuit simulation of quantum electronic devices

Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above

Quantum real-space transfer in a heterostructure overgrown on the cleaved edge of a superlattice

Optically pumped intersubband lasers based on quantum wells

GaAs single-drift flat-profile IMPATT diodes for CW operation at D band

Potential and capabilities of two-terminal devices as millimeter- and submillimeter-wave fundamental sources

Time-dependent electron tunneling through time-dependent tunnel barriers

Theoretical and experimental DC characterization of InGaAs-based abrupt emitter HBT's

Two-terminal millimeter-wave sources

Microwave solid-state active devices

Observation of intrinsic bistability in resonant tunneling diode modeling

Nonlinear models for the intermodulation analysis of FET mixers

Numerical study on the injection performance of AlGaAs/GaAs abrupt emitter heterojunction bipolar transistors

D-band (110–170 GHz) InP gunn devices

Electron-interface phonon interaction in multiple quantum well structures

Time-dependent modeling of resonant-tunneling diodes from direct solution of the Schrödinger equation

Differential tunnel transparency of a rectangular heterostructural barrier for the terahertz frequency range

Wigner function modeling of resonant tunneling diodes with high peak-to-valley ratios

Tunnel injection transit-time diodes for W-band power generation

Enhanced performance in GaAs TUNNETT diode oscillators above 100 GHz through diamond heat sinking and power combining

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