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Fabrication of nanostructures using a UV-based imprint technique

Microelectronic engineering, 2000-06, Vol.53 (1), p.233-236

2000

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Multiple imprinting in UV-based nanoimprint lithography: related material issues

Microelectronic engineering, 2002-07, Vol.61, p.407-413

2002

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Characterization and application of a UV-based imprint technique

Microelectronic engineering, 2001-09, Vol.57, p.361-366

2001

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High-density silicon nanowire growth from self-assembled Au nanoparticles

Microelectronic engineering, 2006-04, Vol.83 (4), p.1530-1533

2006

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Reproducibility and homogeneity in step and repeat UV-nanoimprint lithography

Microelectronic engineering, 2004-06, Vol.73-74, p.152-156

2004

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Reproducibility and homogeneity in step and repeat UV-nanoimprint lithography

Microelectronic engineering, 2004-06, Vol.73, p.152-156

2004

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Concept of floating-dot memory transistors on silicon-on-insulator substrate

Microelectronic engineering, 2002-07, Vol.61, p.497-503

2002

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Synthesis and characterization of boron–oxygen–hydrogen thin films at low temperatures

Materials research bulletin, 2005-08, Vol.40 (8), p.1345-1352

2005

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Fabrication of wire-MOSFETs on silicon-on-insulator substrate

Microelectronic engineering, 2002-07, Vol.61, p.613-618

2002

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Structural and superconducting properties of Bi2-mPbmSr2Ca2Cu3O10-δ with 0≤m≤1

Physica. C, Superconductivity, 1995-02, Vol.242 (3-4), p.291-302

1995

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SiGe wires and dots grown by local epitaxy

Journal of crystal growth, 1995-05, Vol.150 (1-4), p.1060-1064

1995

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New concept for ultra small N-MOSFET's

Microelectronic engineering, 1997-02, Vol.35 (1-4), p.305-308

1997

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Electron beam lithography and ion implantation techniques for fabrication of high-Tc Josephson junctions

Microelectronic engineering, 1996-01, Vol.30 (1-4), p.407-410

1996

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MOS-compatible fabrication and characterization of tunnel junctions in BESOI-material

Microelectronic engineering, 1998, Vol.41, p.531-534

1998

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Fabrication and characterisation of SiGe based in-plane-gate transistors

Microelectronic engineering, 1997-02, Vol.35 (1-4), p.301-304, Article 301

1997

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Local epitaxy of Si/SiGe wires and dots

Journal of crystal growth, 1995-12, Vol.157 (1), p.270-275

1995

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Investigation of Si/SiGe heterostructures patterned by reactive ion etching

Microelectronic engineering, 1996, Vol.30 (1-4), p.341-344

1996

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Fabrication and characterization of Si/SiGe nanometer structures

Microelectronic engineering, 1995-02, Vol.27 (1), p.83-86

1995

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Fabrication and characterisation of locally grown SiGe wires and dots

Materials science and technology, 1995-04, Vol.11 (4), p.407-409

1995

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Fabrication of Monolithic Bidirectional Switch (MBS) devices with MOS-controlled emitter structures

2006 IEEE International Symposium on Power Semiconductor Devices and IC's, 2006, p.1-4

2006

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Coulomb Blockade Effects in a Highly Doped Silicon Quantum Wire Fabricated on Novel Molecular Beam Epitaxy Grown Material

Japanese Journal of Applied Physics, 1999-01, Vol.38 (1S), p.465

1999

Volltextzugriff (PDF)

Direct patterning of single electron tunneling transistors by high resolution electron beam lithography on highly doped molecular beam epitaxy grown silicon films

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1998-11, Vol.16 (6), p.3804-3807

1998

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Metal–oxide–semiconductor-compatible silicon based single electron transistor using bonded and etched back silicon on insulator material

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1997-11, Vol.15 (6), p.2836-2839

1997

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Praxisnahe Kindergaertnerinnenausbildung : Wie mit aelteren Vorschulkindern revolutionaere Traditionen gepflegt werden

Neue Erziehung im Kindergarten, 1988, Vol.41 (4), p.79-82

1988

Volltextzugriff (PDF)

A triangle-shaped nanoscale metal–oxide–semiconductor device

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1996-11, Vol.14 (6), p.4042-4045

1996

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Fabrication of nanostructures using a UV-based imprint technique

Multiple imprinting in UV-based nanoimprint lithography: related material issues

Characterization and application of a UV-based imprint technique

High-density silicon nanowire growth from self-assembled Au nanoparticles

Reproducibility and homogeneity in step and repeat UV-nanoimprint lithography

Reproducibility and homogeneity in step and repeat UV-nanoimprint lithography

Concept of floating-dot memory transistors on silicon-on-insulator substrate

Synthesis and characterization of boron–oxygen–hydrogen thin films at low temperatures

Fabrication of wire-MOSFETs on silicon-on-insulator substrate

Structural and superconducting properties of Bi2-mPbmSr2Ca2Cu3O10-δ with 0≤m≤1

SiGe wires and dots grown by local epitaxy

New concept for ultra small N-MOSFET's

Electron beam lithography and ion implantation techniques for fabrication of high-Tc Josephson junctions

MOS-compatible fabrication and characterization of tunnel junctions in BESOI-material

Fabrication and characterisation of SiGe based in-plane-gate transistors

Local epitaxy of Si/SiGe wires and dots

Investigation of Si/SiGe heterostructures patterned by reactive ion etching

Fabrication and characterization of Si/SiGe nanometer structures

Fabrication and characterisation of locally grown SiGe wires and dots

Fabrication of Monolithic Bidirectional Switch (MBS) devices with MOS-controlled emitter structures

Coulomb Blockade Effects in a Highly Doped Silicon Quantum Wire Fabricated on Novel Molecular Beam Epitaxy Grown Material

Direct patterning of single electron tunneling transistors by high resolution electron beam lithography on highly doped molecular beam epitaxy grown silicon films

Metal–oxide–semiconductor-compatible silicon based single electron transistor using bonded and etched back silicon on insulator material

Praxisnahe Kindergaertnerinnenausbildung : Wie mit aelteren Vorschulkindern revolutionaere Traditionen gepflegt werden

A triangle-shaped nanoscale metal–oxide–semiconductor device

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