UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

GaN-on-Si Power Technology: Devices and Applications

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.779-795

2017

Volltextzugriff (PDF)

Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs

IEEE transactions on electron devices, 2018-06, Vol.65 (6), p.2454-2460

2018

Volltextzugriff (PDF)

The Role of Silicon Substrate on the Leakage Current Through GaN-on-Si Epitaxial Layers

IEEE transactions on electron devices, 2018-01, Vol.65 (1), p.51-58

2018

Volltextzugriff (PDF)

Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs

IEEE electron device letters, 2014-04, Vol.35 (4), p.443-445

2014

Volltextzugriff (PDF)

Hot electron effects in AlGaN/GaN HEMTs during hard-switching events

Microelectronics and reliability, 2021-11, Vol.126, p.114208, Article 114208

2021

Volltextzugriff (PDF)

Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4602-4605

2020

Volltextzugriff (PDF)

Drain Field Plate Impact on the Hard-Switching Performance of AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5003-5008

2021

Volltextzugriff (PDF)

On mechanisms governing AlN and AlGaN growth rate and composition in large substrate size planetary MOVPE reactors

Journal of crystal growth, 2014-05, Vol.393, p.103-107

2014

Volltextzugriff (PDF)

Charge Injection in Normally-Off p-GaN Gate AlGaN/GaN-on-Si HFETs

2018 48th European Solid-State Device Research Conference (ESSDERC), 2018, p.18-21

2018

Volltextzugriff (PDF)

On the Origin of the C} -Losses in Soft-Switching GaN-on-Si Power HEMTs

IEEE journal of emerging and selected topics in power electronics, 2019-06, Vol.7 (2), p.679-694

2019

Volltextzugriff (PDF)

On the Origin of the [Formula Omitted]-Losses in Soft-Switching GaN-on-Si Power HEMTs

IEEE journal of emerging and selected topics in power electronics, 2019-01, Vol.7 (2), p.679

2019

Volltextzugriff (PDF)

The 2018 GaN power electronics roadmap

Journal of physics. D, Applied physics, 2018-04, Vol.51 (16), p.163001

2018

Volltextzugriff (PDF)

From clusters to bulk: A relativistic density functional investigation on a series of gold clusters Aun, n=6,…,147

The Journal of chemical physics, 1997-03, Vol.106 (12), p.5189-5201

1997

Volltextzugriff (PDF)

System-level evaluation of dynamic effects in a GaN-based class-E power amplifier

Integration (Amsterdam), 2020-11, Vol.75, p.11-18

2020

Volltextzugriff (PDF)

A scalar-relativistic extension of the linear combination of Gaussian-type orbitals local density functional method : application to AuH, AuCl and Au2

Chemical physics letters, 1992-11, Vol.199 (5), p.491-496

1992

Volltextzugriff (PDF)

System-Level Assessment of Dynamic Effects in GaN-based Power Converters

2019 15th Conference on Ph.D Research in Microelectronics and Electronics (PRIME), 2019, p.281-284

2019

Volltextzugriff (PDF)

Density Functional Study on the Electronic Structure of Trioxorhenium Organyls

Organometallics, 1996-04, Vol.15 (7), p.1872-1878

1996

Volltextzugriff (PDF)

Stability of Main-Group Element-Centered Gold Cluster Cations

Journal of the American Chemical Society, 1994-09, Vol.116 (18), p.8241-8248

1994

Volltextzugriff (PDF)

Relevance of relativistic exchange-correlation functionals and of finite nuclei in molecular density-functional calculations

Physical review. A, Atomic, molecular, and optical physics, 1996-12, Vol.54 (6), p.4775-4782

1996

Volltextzugriff (PDF)

Reply to the Comment on: Relativistic linear combination of Gaussian-type orbitals density functional method based on a two-component formalism with external field projectors

The Journal of chemical physics, 1992-04, Vol.96 (8), p.6322-6323

1992

Volltextzugriff (PDF)

Are endohedral metal (IV) C28 compounds hypervalent ?

Chemical physics letters, 1992-12, Vol.200 (4), p.418-423

1992

Volltextzugriff (PDF)

On Increasing the Accuracy of Simulations of Deposition and Etching Processes Using Radiosity and the Level Set Method

32nd European Solid-State Device Research Conference, 2002, p.347-350

2002

Volltextzugriff (PDF)

Relativistic density-functional studies of naked and ligated gold clusters

International journal of quantum chemistry, 1994-02, Vol.52 (S28), p.595-610

1994

Volltextzugriff (PDF)

Effect of phosphine substituents in gold(I) complexes: a theoretical study of MeAuPR3, R = H, Me, Ph

Journal of physical chemistry (1952), 1993-05, Vol.97 (19), p.4970-4973

1993

Volltextzugriff (PDF)

A scalar-relativistic extension of the linear combination of Gaussian-type orbitals local density functional method: application to AuH, AuCl and Au 2

Chemical physics letters, 1992, Vol.199 (5), p.491-496

1992

Volltextzugriff (PDF)

1 – 25 von 42

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(34)
Mit Volltextzugriff
(40)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(21)
Physical Sciences
(19)
Physics
(19)
Physics, Applied
(10)
Technology
(9)
Engineering
(8)
Engineering, Electrical & Electronic
(8)
Exact Sciences And Technology
(8)
Gallium Nitride
(8)
Chemistry
(7)
Gallium Nitrides
(7)
Hemts
(6)
Atomic And Molecular Physics
(5)
Dynamic Effects
(5)
Logic Gates
(5)
Modfets
(5)
Silicon
(5)
Chemistry, Physical
(4)
Physics, Atomic, Molecular & Chemical
(4)
Stress
(4)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

GaN-on-Si Power Technology: Devices and Applications

Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs

The Role of Silicon Substrate on the Leakage Current Through GaN-on-Si Epitaxial Layers

Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs

Hot electron effects in AlGaN/GaN HEMTs during hard-switching events

Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress

Drain Field Plate Impact on the Hard-Switching Performance of AlGaN/GaN HEMTs

On mechanisms governing AlN and AlGaN growth rate and composition in large substrate size planetary MOVPE reactors

Charge Injection in Normally-Off p-GaN Gate AlGaN/GaN-on-Si HFETs

On the Origin of the C} -Losses in Soft-Switching GaN-on-Si Power HEMTs

On the Origin of the [Formula Omitted]-Losses in Soft-Switching GaN-on-Si Power HEMTs

The 2018 GaN power electronics roadmap

From clusters to bulk: A relativistic density functional investigation on a series of gold clusters Aun, n=6,…,147

System-level evaluation of dynamic effects in a GaN-based class-E power amplifier

A scalar-relativistic extension of the linear combination of Gaussian-type orbitals local density functional method : application to AuH, AuCl and Au2

System-Level Assessment of Dynamic Effects in GaN-based Power Converters

Density Functional Study on the Electronic Structure of Trioxorhenium Organyls

Stability of Main-Group Element-Centered Gold Cluster Cations

Relevance of relativistic exchange-correlation functionals and of finite nuclei in molecular density-functional calculations

Reply to the Comment on: Relativistic linear combination of Gaussian-type orbitals density functional method based on a two-component formalism with external field projectors

Are endohedral metal (IV) C28 compounds hypervalent ?

On Increasing the Accuracy of Simulations of Deposition and Etching Processes Using Radiosity and the Level Set Method

Relativistic density-functional studies of naked and ligated gold clusters

Effect of phosphine substituents in gold(I) complexes: a theoretical study of MeAuPR3, R = H, Me, Ph

A scalar-relativistic extension of the linear combination of Gaussian-type orbitals local density functional method: application to AuH, AuCl and Au 2

Suchergebnisse filtern