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Strain effects on thermal transitions and mechanical properties of thermoplastic polyurethane elastomers

Thermochimica acta, 1998-12, Vol.323 (1), p.53-63

1998

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A comparison of the critical thickness for MBE grown LT-GaAs determined by in-situ ellipsometry and transmission electron microscopy

Journal of electronic materials, 1997-04, Vol.26 (4), p.391-396

1997

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Photoreflectance measurements of unintentional impurity concentrations in undoped GaAs

Journal of applied physics, 1989-07, Vol.66 (1), p.156-160

1989

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Dynamics of reflection high-energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on (111)B GaAs substrates

Applied physics letters, 1990-06, Vol.56 (25), p.2533-2535

1990

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Homoepitaxy of 6H-SiC by solid-source molecular beam epitaxy using C60 and Si effusion cells

Journal of crystal growth, 2002, Vol.234 (2-3), p.369-372

2002

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Deposition and properties of MoS2 thin films grown by pulsed laser evaporation

Surface & coatings technology, 1988-12, Vol.36 (1-2), p.329-340

1988

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Morphology of Al-Ni-Ge ohmic contacts to n-GaAs as a function of contact composition

Thin solid films, 1994-12, Vol.253 (1-2), p.490-495

1994

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Electrospinning and Stabilization of Fully Hydrolyzed Poly(Vinyl Alcohol) Fibers

Chemistry of materials, 2003-05, Vol.15 (9), p.1860-1864

2003

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X-ray analysis of GaAs layers on GaAs(001) and GaAS(111)B surfaces grown at low temperatures by molecular beam epitaxy

Applied physics letters, 1991-04, Vol.58 (17), p.1854-1856

1991

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Observation of low-T GaAs growth regimes by real-time ellipsometry

Journal of electronic materials, 1993-12, Vol.22 (12), p.1387-1390

1993

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Long-duration exposure facility: Preliminary observations of the effects of low Earth orbit on MgF2, ThF4 and SiO2 optical materials

Surface and interface analysis, 1993-05, Vol.20 (6), p.531-534

1993

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Interfacial reactions in the formation of ohmic contacts to wide bandgap semiconductors

Applied surface science, 1997-06, Vol.117, p.362-372

1997

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Chemical Effects in Auger Electron Spectroscopy

Journal of applied physics, 1972-04, Vol.43 (4), p.1853-1860

1972

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Modeling of MBE Growth with Interacting Fluxes

MRS proceedings, 1994, Vol.299, p.9, Article 9

1994

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Nondestructive evaluation of alternative substrate quality using glancing-incidence x-ray diffraction and Raman spectroscopy

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2003-01, Vol.21 (1), p.110-115

2003

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Effects of shear stress on the crystallization of linear polyethylene and polybutene-1

Polymer engineering and science, 1969-07, Vol.9 (4), p.225-241

1969

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Coadsorption of Ba and O on polycrystalline W

Applied surface science, 1986-06, Vol.26 (1), p.61-76

1986

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Scanning electron excited Auger electron spectroscopy

Applications of surface science, 1979, Vol.2 (2), p.322-334

1979

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In situ ellipsometric study of As capping and low temperature molecular-beam epitaxy GaAs growth and implications for the low temperature critical thickness

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1993-07, Vol.11 (4), p.1423-1426

1993

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Use of optical fiber pyrometry in molecular beam epitaxy

Journal of crystal growth, 1997-05, Vol.175-176, p.262-266

1997

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Low-Energy Electron-Diffraction Study of Molybdenum (110) Surfaces

The Journal of chemical physics, 1966-04, Vol.44 (8), p.2921-2925

1966

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The determination of sulfur-ion-implantation profiles in GaAs using Auger electron spectroscopy

Journal of applied physics, 1979-02, Vol.50 (2), p.809-812

1979

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Adsorption on Niobium (110), Tantalum (110), and Vanadium (110) Surfaces

The Journal of chemical physics, 1967-01, Vol.46 (8), p.3025-3033

1967

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Spectrum subtraction techniques in Auger electron spectroscopy

Surface science, 1975-07, Vol.51 (1), p.318-322

1975

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An easy method to accurately align ion‐bombardment guns for depth profiling in Auger electron spectroscopy

Review of scientific instruments, 1974-09, Vol.45 (9), p.1113-1114

1974

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Strain effects on thermal transitions and mechanical properties of thermoplastic polyurethane elastomers

A comparison of the critical thickness for MBE grown LT-GaAs determined by in-situ ellipsometry and transmission electron microscopy

Photoreflectance measurements of unintentional impurity concentrations in undoped GaAs

Dynamics of reflection high-energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on (111)B GaAs substrates

Homoepitaxy of 6H-SiC by solid-source molecular beam epitaxy using C60 and Si effusion cells

Deposition and properties of MoS2 thin films grown by pulsed laser evaporation

Morphology of Al-Ni-Ge ohmic contacts to n-GaAs as a function of contact composition

Electrospinning and Stabilization of Fully Hydrolyzed Poly(Vinyl Alcohol) Fibers

X-ray analysis of GaAs layers on GaAs(001) and GaAS(111)B surfaces grown at low temperatures by molecular beam epitaxy

Observation of low-T GaAs growth regimes by real-time ellipsometry

Long-duration exposure facility: Preliminary observations of the effects of low Earth orbit on MgF2, ThF4 and SiO2 optical materials

Interfacial reactions in the formation of ohmic contacts to wide bandgap semiconductors

Chemical Effects in Auger Electron Spectroscopy

Modeling of MBE Growth with Interacting Fluxes

Nondestructive evaluation of alternative substrate quality using glancing-incidence x-ray diffraction and Raman spectroscopy

Effects of shear stress on the crystallization of linear polyethylene and polybutene-1

Coadsorption of Ba and O on polycrystalline W

Scanning electron excited Auger electron spectroscopy

In situ ellipsometric study of As capping and low temperature molecular-beam epitaxy GaAs growth and implications for the low temperature critical thickness

Use of optical fiber pyrometry in molecular beam epitaxy

Low-Energy Electron-Diffraction Study of Molybdenum (110) Surfaces

The determination of sulfur-ion-implantation profiles in GaAs using Auger electron spectroscopy

Adsorption on Niobium (110), Tantalum (110), and Vanadium (110) Surfaces

Spectrum subtraction techniques in Auger electron spectroscopy

An easy method to accurately align ion‐bombardment guns for depth profiling in Auger electron spectroscopy

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