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Quantum efficiency of black silicon photodiodes at VUV wavelengths

Optics express, 2020-04, Vol.28 (9), p.13299-13309

2020

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Black-Silicon Ultraviolet Photodiodes Achieve External Quantum Efficiency above 130

Physical review letters, 2020-09, Vol.125 (11), p.1-117702, Article 117702

2020

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Modeling of light-induced degradation due to Cu precipitation in p-type silicon. II. Comparison of simulations and experiments

Journal of applied physics, 2017-05, Vol.121 (19)

2017

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Modeling of light-induced degradation due to Cu precipitation in p-type silicon. I. General theory of precipitation under carrier injection

Journal of applied physics, 2017-05, Vol.121 (19)

2017

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Role of copper in light induced minority-carrier lifetime degradation of silicon

Applied physics letters, 2009-10, Vol.95 (15)

2009

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Phosphorus and boron diffusion gettering of iron in monocrystalline silicon

Journal of applied physics, 2011-05, Vol.109 (9), p.093505-093505-5

2011

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Erratum: “Room-temperature method for minimizing light-induced degradation in crystalline silicon” [Appl. Phys. Lett. 101 , 232108 (2012)]

Applied physics letters, 2015-11, Vol.107 (18), p.189905

2015

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Room-temperature method for minimizing light-induced degradation in crystalline silicon

Applied physics letters, 2012-12, Vol.101 (23)

2012

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Analysis of simultaneous boron and phosphorus diffusion gettering in silicon

Physica status solidi. A, Applications and materials science, 2010-11, Vol.207 (11), p.2589-2592

2010

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Physical mechanisms of boron diffusion gettering of iron in silicon

Physica status solidi. PSS-RRL. Rapid research letters, 2010-06, Vol.4 (5-6), p.136-138

2010

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Iron segregation in silicon-on-insulator wafer with polysilicon interlayer

Physica status solidi. A, Applications and materials science, 2012-04, Vol.209 (4), p.724-726

2012

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As-grown iron precipitates and gettering in multicrystalline silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 2009-03, Vol.159, p.248-252

2009

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Gettering of iron in silicon by boron implantation

Journal of materials science. Materials in electronics, 2008-12, Vol.19 (Suppl 1), p.41-45

2008

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Results on radiation hardness of black silicon induced junction photodetectors from proton and electron radiation

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2020-10, Vol.977, p.164294, Article 164294

2020

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Quantitative copper measurement in oxidized p -type silicon wafers using microwave photoconductivity decay

Applied physics letters, 2005-07, Vol.87 (3), p.032109-032109-3

2005

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Competitive iron gettering between internal gettering sites and boron implantation in CZ-silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 2009-03, Vol.159, p.224-227

2009

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Gettering of iron in CZ-silicon by polysilicon layer

Physica status solidi. C, 2011-03, Vol.8 (3), p.751-754

2011

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Modeling of heterogeneous precipitation of iron in silicon

Applied physics letters, 2005-10, Vol.87 (15), p.151908-151908-3

2005

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Effective Passivation of Black Silicon Surfaces by Atomic Layer Deposition

IEEE journal of photovoltaics, 2013-01, Vol.3 (1), p.90-94

2013

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Effect of internal gettering of iron on electrical characteristics of devices

Materials science & engineering. B, Solid-state materials for advanced technology, 2009-03, Vol.159, p.269-273

2009

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Modeling the effect of mobile ion contamination on the stability of a microelectromechanical resonator

Journal of applied physics, 2011-08, Vol.110 (4), p.043505-043505-5

2011

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Modeling phosphorus diffusion gettering of iron in single crystal silicon

Journal of applied physics, 2009-01, Vol.105 (2), p.023510-023510-4

2009

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Effect of transition metals on oxygen precipitation in silicon

Journal of physics. Conference series, 2008-03, Vol.100 (7), p.072045

2008

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Detection of low-level copper contamination in p-type silicon by means of microwave photoconductive decay measurements

Journal of physics. Condensed matter, 2002-12, Vol.14 (48), p.13119-13125

2002

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Significant minority carrier lifetime improvement in red edge zone in n-type multicrystalline silicon

Solar energy materials and solar cells, 2013-07, Vol.114, p.54-58

2013

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Quantum efficiency of black silicon photodiodes at VUV wavelengths

Black-Silicon Ultraviolet Photodiodes Achieve External Quantum Efficiency above 130

Modeling of light-induced degradation due to Cu precipitation in p-type silicon. II. Comparison of simulations and experiments

Modeling of light-induced degradation due to Cu precipitation in p-type silicon. I. General theory of precipitation under carrier injection

Role of copper in light induced minority-carrier lifetime degradation of silicon

Phosphorus and boron diffusion gettering of iron in monocrystalline silicon

Erratum: “Room-temperature method for minimizing light-induced degradation in crystalline silicon” [Appl. Phys. Lett. 101 , 232108 (2012)]

Room-temperature method for minimizing light-induced degradation in crystalline silicon

Analysis of simultaneous boron and phosphorus diffusion gettering in silicon

Physical mechanisms of boron diffusion gettering of iron in silicon

Iron segregation in silicon-on-insulator wafer with polysilicon interlayer

As-grown iron precipitates and gettering in multicrystalline silicon

Gettering of iron in silicon by boron implantation

Results on radiation hardness of black silicon induced junction photodetectors from proton and electron radiation

Quantitative copper measurement in oxidized p -type silicon wafers using microwave photoconductivity decay

Competitive iron gettering between internal gettering sites and boron implantation in CZ-silicon

Gettering of iron in CZ-silicon by polysilicon layer

Modeling of heterogeneous precipitation of iron in silicon

Effective Passivation of Black Silicon Surfaces by Atomic Layer Deposition

Effect of internal gettering of iron on electrical characteristics of devices

Modeling the effect of mobile ion contamination on the stability of a microelectromechanical resonator

Modeling phosphorus diffusion gettering of iron in single crystal silicon

Effect of transition metals on oxygen precipitation in silicon

Detection of low-level copper contamination in p-type silicon by means of microwave photoconductive decay measurements

Significant minority carrier lifetime improvement in red edge zone in n-type multicrystalline silicon

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