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Scaling Benefits for Active and Gate Insulator of Vertical Channel Thin-Film Transistors Using Atomic Layer Deposited InGaZnO Channel

IEEE electron device letters, 2024-03, Vol.45 (3), p.404-407

2024

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Performance Enhancement of Self-Aligned Coplanar TFTs with ALD-IGZO Channels via Effective Doping from Interlayer Dielectric

IEEE electron device letters, 2023-07, Vol.44 (7), p.1-1

2023

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Device Feasibility of 60-nm-Scaled Vertical-Channel Memory Transistors Using InGaZnO Channel and ZnO Charge-Trap Layers

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1839-1844

2024

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Improvement in Short-Channel Effects of the Thin-Film Transistors Using Atomic-Layer Deposited In-Ga-Sn-O Channels With Various Channel Compositions

IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5542-5548

2022

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Impact of Al2O3 spacers on the improvement in short-channel effects for the mesa-shaped vertical-channel In-Ga-Zn-O thin-film transistors with a channel length below 100 nm

Materials science in semiconductor processing, 2024-03, Vol.171, p.108025, Article 108025

2024

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Impact of Strategic Approaches for Improving the Device Performance of Mesa-shaped Nanoscale Vertical-Channel Thin-Film Transistors Using Atomic-Layer Deposited In–Ga–Zn–O Channel Layers

Electronic Materials Letters, 2022, 18(3), , pp.294-303

2022

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Geometrical and Structural Design Schemes for Trench-Shaped Vertical Channel Transistors Using Atomic-Layer Deposited In-Ga-Zn-O

IEEE electron device letters, 2022-11, Vol.43 (11), p.1909-1912

2022

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Robust Finite-Time Convergence Control Mechanism for High-Precision Tracking in a Hybrid Fluid Power Actuator

IEEE access, 2020, Vol.8, p.196775-196789

2020

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Device-level XPS analysis for physical and electrical characterization of oxide-channel thin-film transistors

Journal of applied physics, 2024-08, Vol.136 (7)

2024

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Weighted-Sum Operation of Three-Terminal Synapse Transistors in Array Configuration Using Spin-Coated Li-Doped ZrO2 Electrolyte Gate Insulator

ACS applied materials & interfaces, 2023-11, Vol.15 (47), p.54622-54633

2023

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A Touchpad for Force and Location Sensing

ETRI Journal, 2010, 32(5), , pp.722-728

2010

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Device feasibility and performance improvement methodologies for thin film transistors using In-Ga-Sn-O channels prepared by atomic-layer deposition

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2022-07, Vol.40 (4)

2022

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Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths

ACS applied materials & interfaces, 2022-07, Vol.14 (27), p.31010-31023

2022

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Improvement in current drivability and stability in nanoscale vertical channel thin-film transistors via band-gap engineering in In–Ga–Zn–O bilayer channel configuration

Nanotechnology, 2023-04, Vol.34 (15), p.155301

2023

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Impact of channel thickness on device scaling in vertical InGaZnO channel charge-trap memory transistors with ALD Al2O3 tunneling layer

Materials science in semiconductor processing, 2024-08, Vol.178, p.108476, Article 108476

2024

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Intra-auditory integration between pitch and loudness in humans: Evidence of super-optimal integration at moderate uncertainty in auditory signals

Scientific reports, 2018-09, Vol.8 (1), p.13708-10, Article 13708

2018

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Analysis on Contact Resistance and Effective Channel Length of Thin Film Transistors Using Composition-Modified In–Ga–Zn‑O Active Channels Prepared with Atomic Layer Deposition and Various Electrode Materials

ACS applied electronic materials, 2022-12, Vol.4 (12), p.6215-6228

2022

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Robot fingertip tactile sensing module with a 3D-curved shape using molding technique

Sensors and actuators. A. Physical., 2013-12, Vol.203, p.421-429

2013

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Force sensing model of capacitive hybrid touch sensor using thin-film force sensor and its evaluation

International journal of precision engineering and manufacturing, 2015-05, Vol.16 (5), p.981-988

2015

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Multifunctional silicon inspired by a wing of male Papilio ulysse

Applied physics letters, 2012-01, Vol.100 (3), p.033109-033109-3

2012

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Weighted-Sum Operation of Three-Terminal Synapse Transistors in Array Configuration Using Spin-Coated Li-Doped ZrO 2 Electrolyte Gate Insulator

ACS applied materials & interfaces, 2023-11, Vol.15 (47), p.54622-54633

2023

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Fabrication of robot head module using contact-resistance force sensor for human-robot interaction and its evaluation

Journal of Mechanical Science and Technology, 2012, 26(10), , pp.3269-3276

2012

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Energy Efficient Electrolytic-Gated Synapse Transistors Using InGaZnO/HfO 2 Gate Stacks With Vertical Channel Configurations

IEEE electron device letters, 2024-09, Vol.45 (9), p.1673-1676

2024

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Energy Efficient Electrolytic-Gated Synapse Transistors Using InGaZnO/HfO2 Gate Stacks with Vertical Channel Configurations

IEEE electron device letters, 2024-07, p.1-1

2024

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Fabrication of four-point biped robot foot module based on contact-resistance force sensor and its evaluation

Journal of Mechanical Science and Technology, 2011, 25(2), , pp.543-548

2011

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1 – 25 von 3.330

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Scaling Benefits for Active and Gate Insulator of Vertical Channel Thin-Film Transistors Using Atomic Layer Deposited InGaZnO Channel

Performance Enhancement of Self-Aligned Coplanar TFTs with ALD-IGZO Channels via Effective Doping from Interlayer Dielectric

Device Feasibility of 60-nm-Scaled Vertical-Channel Memory Transistors Using InGaZnO Channel and ZnO Charge-Trap Layers

Improvement in Short-Channel Effects of the Thin-Film Transistors Using Atomic-Layer Deposited In-Ga-Sn-O Channels With Various Channel Compositions

Impact of Al2O3 spacers on the improvement in short-channel effects for the mesa-shaped vertical-channel In-Ga-Zn-O thin-film transistors with a channel length below 100 nm

Impact of Strategic Approaches for Improving the Device Performance of Mesa-shaped Nanoscale Vertical-Channel Thin-Film Transistors Using Atomic-Layer Deposited In–Ga–Zn–O Channel Layers

Geometrical and Structural Design Schemes for Trench-Shaped Vertical Channel Transistors Using Atomic-Layer Deposited In-Ga-Zn-O

Robust Finite-Time Convergence Control Mechanism for High-Precision Tracking in a Hybrid Fluid Power Actuator

Device-level XPS analysis for physical and electrical characterization of oxide-channel thin-film transistors

Weighted-Sum Operation of Three-Terminal Synapse Transistors in Array Configuration Using Spin-Coated Li-Doped ZrO2 Electrolyte Gate Insulator

A Touchpad for Force and Location Sensing

Device feasibility and performance improvement methodologies for thin film transistors using In-Ga-Sn-O channels prepared by atomic-layer deposition

Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths

Improvement in current drivability and stability in nanoscale vertical channel thin-film transistors via band-gap engineering in In–Ga–Zn–O bilayer channel configuration

Impact of channel thickness on device scaling in vertical InGaZnO channel charge-trap memory transistors with ALD Al2O3 tunneling layer

Intra-auditory integration between pitch and loudness in humans: Evidence of super-optimal integration at moderate uncertainty in auditory signals

Analysis on Contact Resistance and Effective Channel Length of Thin Film Transistors Using Composition-Modified In–Ga–Zn‑O Active Channels Prepared with Atomic Layer Deposition and Various Electrode Materials

Robot fingertip tactile sensing module with a 3D-curved shape using molding technique

Force sensing model of capacitive hybrid touch sensor using thin-film force sensor and its evaluation

Multifunctional silicon inspired by a wing of male Papilio ulysse

Weighted-Sum Operation of Three-Terminal Synapse Transistors in Array Configuration Using Spin-Coated Li-Doped ZrO 2 Electrolyte Gate Insulator

Fabrication of robot head module using contact-resistance force sensor for human-robot interaction and its evaluation

Energy Efficient Electrolytic-Gated Synapse Transistors Using InGaZnO/HfO 2 Gate Stacks With Vertical Channel Configurations

Energy Efficient Electrolytic-Gated Synapse Transistors Using InGaZnO/HfO2 Gate Stacks with Vertical Channel Configurations

Fabrication of four-point biped robot foot module based on contact-resistance force sensor and its evaluation

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