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Sol-Gel derived Ga-In-Zn-O Semiconductor Layers for Solution-Processed Thin-Film Transistors

Journal of the Korean Physical Society, 2008, 53(1), , pp.218-222

2008

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Sol-Gel derived Ga-In-Zn-O Semiconductor Layers for Solution-Processed Thin-Film Transistors

Journal of the Korean Physical Society, 2008-07, Vol.53 (1), p.218-222

2008

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DIELECTRIC AND ELECTROMECHANICAL PROPERTIES OF Pb(Zr,Ti)O3 THIN FILMS FOR PIEZO-MICROELECTROMECHANICAL SYSTEM DEVICES

Jpn.J.Appl.Phys ,Part 1. Vol. 42, no. 9B, pp. 5952-5955. 2003, 2003, Vol.42 (9B), p.5952-5955

2003

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Effect of Oxidation on the Room-Temperature Flexural Strength of Reaction-Bonded Silicon Carbides

Journal of the American Ceramic Society, 1999-06, Vol.82 (6), p.1601-1604

1999

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Changes in Preferred Orientation of Pt Thin Films Deposited by dc Magnetron Sputtering Using Ar/O2 Gas Mixtures

Journal of materials research, 1999-04, Vol.14 (4), p.1255-1260

1999

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Highly (200)-oriented Pt films on SiO2/Si substrates by seed selection through amorphization and controlled grain growth

Journal of materials research, 1999-03, Vol.14 (3), p.634-637

1999

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THICKNESS EFFECTS ON THE PYROELECTRIC PROPERTIES OF CHEMICAL-SOLUTION-DERIVED Pb(Zr0.3,Ti0.7)O3 THIN FILMS FOR THE INFRA-RED SENSOR DEVICES

Jpn.J.Appl.Phys ,Part 1. Vol. 42, no. 9B, pp. 5956-5959. 2003, 2003, Vol.42 (9B), p.5956-5959

2003

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PREFERRED ORIENTATION CONTROLLED GIANT GRAIN GROWTH OF PLATINUM THIN FILMS ON SiO2/Si SUBSTRATES

Jpn.J.Appl.Phys ,Part 2. Vol. 40, no. 1A/B, pp. L1-L3. 2001, 2001-01, Vol.40 (1A/B), p.L1-L3

2001

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Effects of the Microstructure of Platinum Electrode on the Oxidation Behavior of TiN Diffusion Barrier Layer

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 2A), p.630-633

2003

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Thickness effects on imprint in chemical-solution-derived (Pb, La)(Zr, Ti)O3 thin films

Applied physics letters, 2001-05, Vol.78 (19), p.2885-2887

2001

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Sol-Gel derived Ga-In-Zn-O Semiconductor Layers for Solution-Processed Thin-Film Transistors

Journal of the Korean Physical Society, 2008-07, p.218-222

2008

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Centrifugal casting of alumina tube for membrane application

Journal of membrane science, 2002-04, Vol.199 (1), p.69-74

2002

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Electrical Properties of BiFeO3 Doped PZT Thin Films for Embedded FeRAM Devices

Journal of the Korean Physical Society, 2006, 49(III), , pp.514-517

2006

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Characterization of Platinum films Deposited by a Two-Step Magnetron Sputtering on SiO2/Si Substrates

MRS proceedings, 1996, Vol.441, Article 341

1996

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Dielectric and Electromechanical Properties of Pb(Zr,Ti)O 3 Thin Films for Piezo-Microelectromechanical System Devices

Japanese Journal of Applied Physics, 2003-09, Vol.42 (Part 1, No. 9B), p.5952-5955

2003

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Chemical solution modified PZT thick films using hybrid deposition techniques for piezoelectric MEMS devices

2008 17th IEEE International Symposium on the Applications of Ferroelectrics, 2008, Vol.3, p.1-1

2008

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Ca- and Sr-doped (Pb1−xLax)(ZryTi1−y)1−x/4O3 thin films for low-voltage operation

Thin solid films, 2001-08, Vol.394 (1-2), p.130-134

Kim, S

2001

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Structural features and phase transition temperature of BaxSr1-xTiO3 films grown on various substrates

Journal of physics. Condensed matter, 2002-07, Vol.14 (27), p.6823-6831, Article 306

2002

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Effects of IrO 2 /Pt Hybrid Electrodes on the Crystallization and Ferroelectric Performances of Sol-gel-derived Pb(Zr,Ti)O 3 Thin Film Capacitors

Journal of materials research, 2002-07, Vol.17 (7), p.1735-1742

2002

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Ca- and Sr-doped (Pb 1− xLa x)(Zr yTi 1− y) 1− x/4 O 3 thin films for low-voltage operation

Thin solid films, 2001, Vol.394 (1), p.130-134

2001

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Ca- and Sr-doped (Pb1-xLax)(ZryTi1-y)1-x/4O3 thin films for low-voltage operation

Thin solid films, 2001, Vol.394 (1-2), p.131-135

2001

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Reaction-bonded silicon carbide tube fabricated by continuous sintering of double-walled preform

Ceramics international, 2004, Vol.30 (4), p.533-537

2004

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Dependence of ferroelectric performance of sol–gel-derived Pb(Zr,Ti)O3 thin films on bottom-Pt-electrode thickness

Applied physics letters, 2002-10, Vol.81 (17), p.3224-3226

2002

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Structural features and phase transition temperature of BaxSr1-xTiO3 films grown on various substrates

Journal of physics. Condensed matter, 2002, Vol.14 (27), p.6823-6832

2002

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Characterization of Sol–Gel Multicoated Thick Pb(Zr 0.52 , Ti 0.48 )O 3 Films on Platinized Silicon Substrates for Microdevices Applications

Japanese Journal of Applied Physics, 2003-12, Vol.42 (Part 1, No. 12), p.7497-7501

2003

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Sol-Gel derived Ga-In-Zn-O Semiconductor Layers for Solution-Processed Thin-Film Transistors

Sol-Gel derived Ga-In-Zn-O Semiconductor Layers for Solution-Processed Thin-Film Transistors

DIELECTRIC AND ELECTROMECHANICAL PROPERTIES OF Pb(Zr,Ti)O3 THIN FILMS FOR PIEZO-MICROELECTROMECHANICAL SYSTEM DEVICES

Effect of Oxidation on the Room-Temperature Flexural Strength of Reaction-Bonded Silicon Carbides

Changes in Preferred Orientation of Pt Thin Films Deposited by dc Magnetron Sputtering Using Ar/O2 Gas Mixtures

Highly (200)-oriented Pt films on SiO2/Si substrates by seed selection through amorphization and controlled grain growth

THICKNESS EFFECTS ON THE PYROELECTRIC PROPERTIES OF CHEMICAL-SOLUTION-DERIVED Pb(Zr0.3,Ti0.7)O3 THIN FILMS FOR THE INFRA-RED SENSOR DEVICES

PREFERRED ORIENTATION CONTROLLED GIANT GRAIN GROWTH OF PLATINUM THIN FILMS ON SiO2/Si SUBSTRATES

Effects of the Microstructure of Platinum Electrode on the Oxidation Behavior of TiN Diffusion Barrier Layer

Thickness effects on imprint in chemical-solution-derived (Pb, La)(Zr, Ti)O3 thin films

Sol-Gel derived Ga-In-Zn-O Semiconductor Layers for Solution-Processed Thin-Film Transistors

Centrifugal casting of alumina tube for membrane application

Electrical Properties of BiFeO3 Doped PZT Thin Films for Embedded FeRAM Devices

Characterization of Platinum films Deposited by a Two-Step Magnetron Sputtering on SiO2/Si Substrates

Dielectric and Electromechanical Properties of Pb(Zr,Ti)O 3 Thin Films for Piezo-Microelectromechanical System Devices

Chemical solution modified PZT thick films using hybrid deposition techniques for piezoelectric MEMS devices

Ca- and Sr-doped (Pb1−xLax)(ZryTi1−y)1−x/4O3 thin films for low-voltage operation

Structural features and phase transition temperature of BaxSr1-xTiO3 films grown on various substrates

Effects of IrO 2 /Pt Hybrid Electrodes on the Crystallization and Ferroelectric Performances of Sol-gel-derived Pb(Zr,Ti)O 3 Thin Film Capacitors

Ca- and Sr-doped (Pb 1− xLa x)(Zr yTi 1− y) 1− x/4 O 3 thin films for low-voltage operation

Ca- and Sr-doped (Pb1-xLax)(ZryTi1-y)1-x/4O3 thin films for low-voltage operation

Reaction-bonded silicon carbide tube fabricated by continuous sintering of double-walled preform

Dependence of ferroelectric performance of sol–gel-derived Pb(Zr,Ti)O3 thin films on bottom-Pt-electrode thickness

Structural features and phase transition temperature of BaxSr1-xTiO3 films grown on various substrates

Characterization of Sol–Gel Multicoated Thick Pb(Zr 0.52 , Ti 0.48 )O 3 Films on Platinized Silicon Substrates for Microdevices Applications

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